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Preparation method of bismuth titanate-based bismuth layered structure ferroelectric ceramic target

A technology of bismuth titanate-based bismuth and ferroelectric ceramics, which is applied in voltage variable capacitors, etc., can solve the problems of introducing impurities, cracking the surface layer, etc., and achieve the effect of improving purity

Active Publication Date: 2020-04-14
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the bismuth titanate-based bismuth layered ceramic target is easy to crack in the process of high-energy ion beam and laser bombardment and the problem that the surface layer introduces impurities during the preparation process, and provides a bismuth titanate-based bismuth layered ceramic target. A method for preparing a structural ferroelectric ceramic target. The ceramic target prepared by this method is suitable for preparing ferroelectric thin films by physical methods such as radio frequency magnetron sputtering and pulsed laser deposition.

Method used

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Embodiment 1

[0026] A method for preparing a bismuth titanate-based bismuth layered structure ferroelectric ceramic target, the bismuth titanate-based ferroelectric ceramic dopant is La 2 o 3 and TaO 2 , the chemical formula is Bi 3.25 La 0.75 Ta 0.09 Ti 2.91 o 12 , weigh Bi according to the stoichiometric ratio 2 o 3 ,TiO 2 , La 2 o 3 and TaO 2 , with a purity of 99.99wt%, 99.99wt%, 99.99wt% and 99.5wt%, respectively, where Bi 2 o 3 Excess 3wt%, i.e. Bi 2 o 3 =34.316g, TiO 2 = 10.229g, La 2 o 3 =5.376g and TaO 2 = 0.880 g. Add the weighed raw material powder into an anhydrous ethanol medium, ball mill for 2 hours, put it into an oven for drying at 80°C, and then heat it at 800°C for 2 hours for pre-calcination. The powder obtained after pre-calcination is ball-milled for 1 hour for the second time, and after drying at 80°C, 2wt%, that is, 1.01g of polyvinyl alcohol binder is added, wherein the mass concentration of polyvinyl alcohol in the polyvinyl alcohol binder is ...

Embodiment 2

[0029] A method for preparing a bismuth titanate-based bismuth layered structure ferroelectric ceramic target, the bismuth titanate-based ferroelectric ceramic dopant is La 2 o 3 The chemical formula is Bi 3.25 La 0.75 Ti 3 o 12 , according to the chemical formula to weigh analytically pure Bi 2 o 3 ,TiO 2 and La 2 o 3 , with a purity of 99.99wt%, where Bi 2 o 3 Excess 2wt%, i.e. Bi 2 o 3 = 16.991g, TiO 2 =5.271g, La 2 o 3 = 2.688g. Add the weighed raw material powder into an anhydrous ethanol medium, ball mill for 2 hours, put it into an oven for drying at 80°C, and then heat it at 800°C for 2 hours for pre-calcination. The powder obtained after calcining is ball-milled for 1 hour for the second time, and after drying at 80°C, add 3wt%, that is, 0.75g of polyvinyl alcohol binder, wherein the polyvinyl alcohol binder The mass concentration of polyvinyl alcohol in it is 10%, and it is pressed under 100MPa pressure. The obtained ceramic green body was heat-pres...

Embodiment 3

[0031] A method for preparing a bismuth titanate-based bismuth layered structure ferroelectric ceramic target, the chemical formula of the bismuth titanate-based ferroelectric ceramic is Bi 4 Ti 3 o 12 , according to the chemical formula to weigh Bi 2 o 3 and TiO 2 , with a purity of 99.99wt%, where Bi 2 o 3 Excess 4wt% is Bi 2 o 3 =42.648g, TiO 2 =10.543g, all the other conditions are with embodiment 1. Finally, a bismuth titanate-based bismuth layered structure ferroelectric ceramic target is obtained. The XRD test of the target shows that the ceramic is a pure bismuth layered structure, and no impurity phase appears. When the target is used in the process of preparing the ferroelectric thin film by radio frequency magnetron sputtering, no cracking occurs.

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Abstract

The invention relates to a preparation method of a bismuth titanate-based bismuth layer structure ferroelectric ceramic target, and belongs to the field of ceramic target preparation. The ceramic target prepared by the method comprises two parts, namely a ceramic block body and a copper sheet, and is suitable for preparation of a ferroelectric film through physical methods such as radio-frequency magnetron sputtering and pulsed laser deposition. The preparation method comprises the steps of material weighing, ball-milling, pre-sintering, secondary ball-milling, molding, plastic removal, cold isostatic pressing, secondary pre-sintering, grinding, sintering, polishing and copper sheet pasting. The prepared target material has relatively high whole thermal conductivity, thermal stress can be timely removed, the defect that the target is easy to crack in the ion beam and laser bombardment process is overcome and the quality of the target is improved. Meanwhile, the chemical purity and the structure purity of the bismuth titanate-based bismuth layer structure ferroelectric ceramic are improved, and preparation of the high-quality ferroelectric film is facilitated.

Description

technical field [0001] The invention relates to a method for preparing a bismuth titanate-based bismuth layered structure ferroelectric ceramic target, in particular to a bismuth titanate-based bismuth titanate-based bismuth titanate-based ferroelectric film prepared by physical methods such as radio frequency magnetron sputtering and pulsed laser deposition. The invention discloses a method for preparing a layered structure ferroelectric ceramic target, belonging to the field of ceramic target preparation. Background technique [0002] Ferroelectric ceramic materials have many important properties, such as ferroelectric polarization switching characteristics, pyroelectricity, high dielectricity, piezoelectricity, electro-optic effect and nonlinear optical properties, etc., which can be used to prepare capacitors, pressure sensors, A series of electronic components such as ferroelectric memory, waveguide and optical memory. Ferroelectric ceramic materials have attracted muc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G7/06C04B35/475C04B35/626C04B35/634C04B35/638C04B41/88C04B35/622
CPCC04B35/475C04B35/62218C04B35/62605C04B35/63416C04B35/638C04B41/5116C04B41/88C04B2235/3227C04B2235/3251C04B2235/6567C04B2235/96
Inventor 程兴旺马帅
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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