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Intermittent direct-current (DC) magnetron sputtering preparation method of amorphous cobalt-based magnetic film

A technology of DC magnetron sputtering and magnetic thin films, which is applied in the application of magnetic films to substrates, magnetic materials, magnetic objects, etc. It can solve problems such as difficult sputtering of amorphous films, inability to form amorphous, and insufficient cooling speed , to achieve the effects of simple process, high degree of amorphousness and strong adaptability

Inactive Publication Date: 2017-08-15
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Among the multi-element alloy targets reported so far: when multi-layered spin-solidified amorphous ribbons are used as the sputtering target, a high current will be generated at the interface between the ribbons, which will lead to the generation of alloy droplets, and the liquid After the droplets are sputtered onto the substrate, due to insufficient cooling rate, the amorphous film cannot be formed and the film quality is damaged; the multi-target system composed of multiple amorphous alloy targets is difficult to sputter the required uniform amorphous film

Method used

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  • Intermittent direct-current (DC) magnetron sputtering preparation method of amorphous cobalt-based magnetic film
  • Intermittent direct-current (DC) magnetron sputtering preparation method of amorphous cobalt-based magnetic film
  • Intermittent direct-current (DC) magnetron sputtering preparation method of amorphous cobalt-based magnetic film

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Experimental program
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Effect test

Embodiment 1

[0027] First, fix the molybdenum target and the quartz substrate in a DC magnetron sputtering apparatus. Vacuum the sputtering chamber to make the vacuum better than 5x10 -4 Pa, open the argon valve to feed argon, and control the partial pressure of argon to 0.4Pa, adjust the flow of the argon valve, control the flow of argon to 200ml / min, open the voltage control knob and control the sputtering power to 150W, and then Sputter on the quartz substrate for 15 minutes to obtain a stress buffer layer with a thickness of about 200 nm. Then replace the molybdenum target with Co 67 Fe x Mo 5.5-x Si y B 27-y The target is sputtered under the same sputtering process, the sputtering baffle is closed for 13 minutes every 10 minutes of sputtering, and the temperature of the quartz substrate is controlled between 50-70°C. After the effective sputtering time reaches 1.5h, stop sputtering, close the argon gas valve, and open the cavity after the temperature of the quartz substrate is c...

Embodiment 2

[0030] First, fix the tungsten target and the quartz substrate in a DC magnetron sputtering apparatus. Vacuum the sputtering chamber to make the vacuum better than 5x10 -4 Pa, open the argon valve to feed argon, and control the partial pressure of argon to 1.2Pa, adjust the flow rate of the argon valve, control the flow rate of argon gas to 40ml / min, open the voltage control knob and control the sputtering power to 120W, first in the quartz Sputter on the substrate for 20 minutes to obtain a stress buffer layer with a thickness of about 300 nm. Then replace the tungsten target with Co 67 Fe x Mo 5.5-x Si y B 27-y The target is sputtered, and the sputtering baffle is closed for 10 minutes every 10 minutes of sputtering, and the temperature of the substrate is controlled between 50-70°C. After the effective sputtering time reaches 2 hours, stop the sputtering, close the argon gas valve, and open the cavity to take out the sputtered Co 67 Fe x Mo 5.5-x Si y B 27-y film...

Embodiment 3

[0033] First, fix the titanium target and the quartz substrate in a DC magnetron sputtering apparatus. Vacuum the sputtering chamber to make the vacuum better than 5x10 -4 Pa, open the argon valve to feed argon, and control the partial pressure of argon to 0.8Pa, adjust the flow of the argon valve, control the flow of argon to 100ml / min, open the voltage control knob and control the sputtering power to 180W, first use Sputter on the quartz substrate for 15 minutes to obtain a stress buffer layer with a thickness of about 250 nm. Then replace the tungsten target with Co 67 Fe x Mo 5.5-x Si y B 27-y The target is sputtered, and the sputtering baffle is closed for 15 minutes every 10 minutes of sputtering, and the temperature of the substrate is controlled between 50-70°C. After the effective sputtering time reaches 1h, stop sputtering, close the argon gas valve, and open the cavity to take out the sputtered Co 67 Fe x Mo 5.5-x Si y B 27-y film.

[0034] Then, place the...

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Abstract

The invention relates to an intermittent direct-current (DC) magnetron sputtering preparation method of an amorphous cobalt-based magnetic film. The method comprises the steps as follows: (1) a cast Co67FexMo(5.5-x)SiyB(27-y) (x is larger than 2 and smaller than 5, and y is larger than 10 and smaller than 17) crystalline alloy is used as a target material, quartz is used as a substrate, a pure metal buffer layer is sputtered on the quartz substrate firstly, and the temperature of the substrate is controlled to range from 50 DEG C to 70 DEG C with the intermittent DC magnetron sputtering method; the magnetron sputtering technology is as follows: the sputtering power ranges from 120 W to 180 W, the argon flow ranges from 40 ml / min to 200 ml / min, the argon partial pressure ranges from 0.4 Pa to 1.2 Pa; (2) annealing treatment is performed on a sputtering-state film as follows: the sputtering-state Co67FexMo(5.5-x)SiyB(27-y) film is arranged in a vacuum annealing furnace, the temperature of 300-430 DEG C is kept for 1 h with the gradient temperature increase method, and the film is cooled with the furnace; and the prepared film is high in amorphous degree, and the saturated magnetization intensity reaches 0.27 T. the preparation method suitable for different types of magnetic films is convenient to operate, short in production cycle, low in equipment requirement and easy to industrialize.

Description

technical field [0001] The invention relates to an amorphous Co with good soft magnetic properties 67 Fe x Mo 5.5-x Si y B 27-y The method of film preparation. Background technique [0002] Amorphous and nanocrystalline alloys are widely used in different fields because of their excellent soft magnetic properties: such as magneto-optical storage, magnetic shielding and magnetic sensors. Among them, magnetic alloys rich in cobalt and iron have excellent magnetic properties such as high Curie temperature, high magnetic permeability, low magnetic loss, low coercive force and high saturation magnetization, and are widely used in sensors, actuators and magnetic recording heads, etc. magnetic devices. With the development of magnetic devices in the direction of miniaturization, magnetic alloy materials are required to achieve miniaturization, so the thin film of magnetic alloys is essential. [0003] The preparation of amorphous magnetic thin films mostly adopts physical va...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/18C23C14/16C23C14/58H01F1/153H01F41/18
CPCC23C14/352C23C14/165C23C14/185C23C14/3407C23C14/5806H01F1/15316H01F41/18H01F41/183
Inventor 罗国强鄢凤麟林耀军张建张联盟沈强
Owner WUHAN UNIV OF TECH
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