Copper alloy sputtering target and method for manufacturing same
A manufacturing method and sputtering target technology, applied in sputtering coating, semiconductor/solid-state device manufacturing, metal material coating process, etc., can solve the problem of low resistivity, reduce impurities, and suppress the generation of powder particles Effect
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Embodiment 1
[0038]Cu with a purity of 6N or higher was prepared, introduced into a water-cooled copper crucible, and melted by irradiating plasma under an argon atmosphere introduced with 4% by volume of hydrogen by a plasma arc melting method. Then, this molten metal was introduced into a water-cooled copper crucible, Al with a purity of 4N or higher was added so as to be 1 atomic %, and smelted by a plasma arc melting method. Next, molten metal of the copper alloy is poured into a water-cooled copper mold, melted by vacuum induction melting, and a solidified ingot is pulled out from the bottom of the mold.
[0039] Next, the ingot was formed into a diameter of 180 mm×thickness of 160 mm, hot forged at 700° C., and then rolled to a diameter of 460 mm×thickness of 24.5 mm by cold rolling. Then, heat treatment was performed at 400° C., and then quenched to produce a rolled sheet. This rolled plate was machined to manufacture a sputtering target with a diameter of 440 mm and a thickness of...
Embodiment 2
[0043] Cu with a purity of 6N or higher was prepared, introduced into a water-cooled copper crucible, and melted by irradiating plasma under an argon atmosphere by a plasma arc melting method. Then, 4% by volume of hydrogen gas was added to the atmosphere during melting, and melting was performed again. Then, this molten metal was introduced into a water-cooled copper crucible in the next stage, Al with a purity of 4N or higher was added so as to be 1 atomic %, and melting was performed by a plasma arc melting method. Next, the molten metal is poured into a water-cooled copper mold, melted by vacuum induction melting, and the solidified ingot is pulled from the bottom of the mold.
[0044] Next, this alloy ingot was processed into a sputtering target by the same method and conditions as in Example 1, and then this sputtering target was bonded to a backing plate by diffusion bonding. As a result of examining the impurity concentration of a part of the cut ingot, the total cont...
Embodiment 3
[0046] Cu with a purity of 6N or higher was prepared, introduced into a water-cooled copper crucible, and melted by an electron beam melting method in a vacuum atmosphere in which hydrogen gas was added at a flow rate of 400 ml / min or higher. Then, this molten metal is introduced into the water-cooled copper crucible of the next stage, and high-purity Al having a purity of 4N or higher is added so as to be 1 atomic %, and melted by an electron beam melting method. Next, the molten metal is poured into a water-cooled copper mold, melted by vacuum induction melting, and the solidified ingot is pulled from the bottom of the mold.
[0047] Next, this alloy ingot was processed into a sputtering target by the same method and conditions as in Example 1, and then this sputtering target was bonded to a backing plate by diffusion bonding. The impurity concentration of a part of the cut ingot was examined. As a result, the total content of metal impurities was 1 wtppm or less, and the ca...
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Abstract
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