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Surface plasmon and interface field cooperation enhanced monocrystalline silicon cell preparation method

A technology of surface plasmons and monocrystalline silicon cells, which is applied in the field of photovoltaics and can solve the problem of low income

Inactive Publication Date: 2017-10-10
FUDAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method is not profitable in essence, and it is easily replaced by new anti-reflection technologies such as physical surface texturing and black silicon technology.

Method used

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  • Surface plasmon and interface field cooperation enhanced monocrystalline silicon cell preparation method
  • Surface plasmon and interface field cooperation enhanced monocrystalline silicon cell preparation method
  • Surface plasmon and interface field cooperation enhanced monocrystalline silicon cell preparation method

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Embodiment Construction

[0032] The following examples are used to illustrate the present invention, but not to limit the present invention.

[0033] 1. Raw material and formula

[0034] Substrate: Polished on both sides, resistivity 10Ωcm, volume 10×10×0.2mm 3 Monocrystalline silicon wafers, Suzhou Ruicai Semiconductor Co., Ltd.;

[0035] Upper electrode: 90:10 high-density ITO particles, size 1-3mm, purity 99.99%, Zhongnuo New Material Technology Co., Ltd.;

[0036] Upper passivation layer: silicon dioxide particles, size 1-3mm, purity 99.999%, Zhongnuo New Material Technology Co., Ltd.;

[0037] Metal surface plasmon material: high-purity silver particles, size 1mm, purity 99.999%, Zhongnuo New Material Technology Co., Ltd.; (here can be replaced with other high-purity metal particles, such as gold or aluminum)

[0038] Back passivation layer: alumina particles, size 1-3mm, purity 99.99%, Zhongnuo New Material Technology Co., Ltd.;

[0039] Back electrode: aluminum wire, diameter 1mm, purity 99...

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Abstract

The invention belongs to the photovoltaic technical field, and specifically relates to a surface plasmon and interface field cooperation enhanced monocrystalline silicon cell preparation method; the method comprises the following steps: using a heat annealing induction method to make metal particles (diameter<100nm) nested in a silica upper passivation layer; allowing the vapor plated metal film to thermal contract under the cell sintering temperature, thus forming nanometer particles, effectively capturing the sunlight waveband of resonance wavelength nearby UV, and forming photoproduction electron hole pairs; using the silica passivation layer interface field effect on n-type silicon to pull open the photoproduction electron hole pair, thus forming extra photoelectric current, and improving the cell photoelectric responses. The silica of the precious metal anteposition nested structure can serve as an excellent field effect passivation layer.

Description

technical field [0001] The invention belongs to the technical field of photovoltaics, and in particular relates to a method for preparing a monocrystalline silicon solar cell. Background technique [0002] Surface plasmon resonance (SPR), also known as surface plasmon resonance, is a physical optical phenomenon. The related instruments and application technologies have become important tools in the research of physics, chemistry and biology. By constructing a surface composed of metal nanoparticles, the surface plasmon resonance of the local field is realized, and the evanescent wave incident on the surface of the medium is easily matched with the intrinsic wave vector of the metal (nanoparticle) plasma, thereby achieving resonance. The absorption of light at the wavelength is greatly enhanced. [0003] The phenomenon of surface plasmon resonance was observed by Wood in the laboratory as early as 1902, but for a long time, this phenomenon has not been well utilized. The mos...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18B82Y30/00
CPCB82Y30/00H01L31/1804H01L31/1868Y02E10/547Y02P70/50
Inventor 周智全胡斐陆明
Owner FUDAN UNIV