A method for growing large-domain graphene using hexagonal boron nitride as point seeds

A technology of hexagonal boron nitride and graphene, which is applied in the field of graphene preparation to achieve the effect of improving growth quality, ensuring nucleation density and uniform layer number

Active Publication Date: 2020-04-21
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method can obtain graphene single crystals, it still cannot avoid the defect of spontaneous nucleation of unrelated points of graphene on the copper foil substrate.

Method used

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  • A method for growing large-domain graphene using hexagonal boron nitride as point seeds
  • A method for growing large-domain graphene using hexagonal boron nitride as point seeds
  • A method for growing large-domain graphene using hexagonal boron nitride as point seeds

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Embodiment 1

[0039] A method for positioning and growing large-domain graphene by using hexagonal boron nitride as a point seed crystal, taking a copper substrate as an example, comprising the following steps:

[0040] (1) The copper foil with a thickness of 25 μm is polished and cleaned; the hexagonal boron nitride powder is dissolved in 60ml of ethanol solution, and then stirred and ultrasonically treated. The stirring and ultrasonic time are 10min and 20min, so that the boron nitride particles are evenly dispersed , and then let it stand for 3 hours, and then use Scotch tape to peel and transfer the boron nitride to the surface of the copper foil.

[0041] (2) Place the processed copper foil in (1) flat in the quartz boat of the CVD tube furnace, and the vacuum degree of the high-temperature CVD graphene growth furnace chamber is 10 -3 Pa, the temperature is raised to 300°C, and the heating rate is 10°C / min; high-purity argon and hydrogen are introduced, the flow rates of argon and hydr...

Embodiment 2

[0045] A method for positioning and growing large-domain graphene by using hexagonal boron nitride as a point seed crystal, taking a copper substrate as an example, comprising the following steps:

[0046] (1) The copper foil with a thickness of 25 μm is polished and cleaned; the hexagonal boron nitride powder is dissolved in 40ml of ethanol solution, and then stirred and ultrasonically treated. The stirring and ultrasonic time are 10min and 20min, so that the boron nitride particles are evenly dispersed , and then let it stand for 3 hours, and then use Scotch tape to peel and transfer the boron nitride to the surface of the copper foil.

[0047] (2) Place the processed copper foil in (1) flat in the quartz boat of the CVD tube furnace, and the vacuum degree of the high-temperature CVD graphene growth furnace chamber is 10 -3 Pa, the temperature is raised to 300°C, and the heating rate is 10°C / min; high-purity argon and hydrogen are introduced, the flow rates of argon and hydr...

Embodiment 3

[0050] A method for positioning and growing large-domain graphene by using hexagonal boron nitride as a point seed crystal, taking a copper substrate as an example, comprising the following steps:

[0051] (1) The copper foil with a thickness of 25 μm is polished and cleaned; the hexagonal boron nitride powder is dissolved in 40ml of acetone solution, and then stirred and ultrasonically treated. The stirring and ultrasonic time are 10min and 20min, so that the boron nitride particles are evenly dispersed , and then let it stand for 3 hours, and then use Scotch tape to peel and transfer the boron nitride to the surface of the copper foil.

[0052] (2) Place the processed copper foil in (1) flat in the quartz boat of the CVD tube furnace, and the vacuum degree of the high-temperature CVD graphene growth furnace chamber is 10 -3 Pa, the temperature is raised to 300°C, and the heating rate is 10°C / min; high-purity argon and hydrogen are introduced, the flow rates of argon and hydr...

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Abstract

The invention relates to a method for growing large-domain graphene on a substrate by using hexagonal boron nitride as point-seed crystal. The method is characterized in that hexagonal boron nitride is used as point-seed crystal to grow graphene, therefore, heterojunction is easily formed with graphene; graphene continues the in-situ growth along the outer edge of boron nitride seed crystal; the concentration of a hexagonal boron nitride solution is controlled, so that the nucleation density of graphene is ensured, and the self-configuration of a non-relative nucleating point of graphene grown on the substrate in a traditional CVD technology can be avoided, and as a result, the graphene growing quality can be obviously improved.

Description

technical field [0001] The invention relates to a method for growing large crystal domain graphene by using hexagonal boron nitride as a point seed crystal, and belongs to the technical field of graphene preparation. Background technique [0002] Graphene is an atomic-level two-dimensional crystal material of a hexagonal honeycomb lattice formed by the hybridization of carbon atoms in sp2 orbitals. It is a quasi-two-dimensional material with only one atomic layer thickness, so it is also called monoatomic layer graphite. The basic structural units of other dimensional carbon materials can be wrapped into zero-dimensional fullerenes, rolled into one-dimensional carbon nanotubes or stacked into three-dimensional graphite. Because of its unique structure, graphene has good electrical, mechanical, thermal, optical and other properties. Graphene material can exceed 200,000cm 2 · v -1 ·s -1 The theoretical electron mobility and the unique quantum Hall effect at room temperatur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/188
CPCC01B2204/02C01B2204/04C01P2002/82C01P2004/03C01P2004/61
Inventor 于法鹏张晶杨志远孙丽李妍璐程秀凤赵显
Owner SHANDONG UNIV
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