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Non-organic-glue wafer-level package method and LED flip chip package body

A wafer-level packaging, flip-chip technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of high bonding processing temperature, damage to flip-chip, etc., to achieve high light transmittance, long life, Avoid low-yield effects

Inactive Publication Date: 2017-11-07
XIAMEN HUALIAN ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention aims to provide a wafer-level packaging method free of organic glue and an LED flip-chip package body, and provides a low-temperature bonding method to solve the problem that the existing LED packaging needs organic glue potting protection and inorganic material packaging. The problem of flip chip damage due to high bonding processing temperature

Method used

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  • Non-organic-glue wafer-level package method and LED flip chip package body
  • Non-organic-glue wafer-level package method and LED flip chip package body
  • Non-organic-glue wafer-level package method and LED flip chip package body

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Experimental program
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Effect test

Embodiment 1

[0039] The invention provides a method for wafer-level packaging free of organic glue, the method comprising the following steps,

[0040] S1. Prepare flat silicate glass and LED flip-chip wafers. The LED flip-chip wafers have been formed on the epitaxial layer of the wafer through chip technology to form electrodes and other processes, but have not been pre-cracked and processed. sliced ​​wafers;

[0041] S2. Form a phosphor layer on one surface of the glass, and use the other surface corresponding to the surface as the surface to be bonded;

[0042] S3, forming a SiO2 passivation layer on the light-emitting surface of the LED flip-chip wafer;

[0043] S4, directly bonding the surface to be bonded of the glass after step S2 to the passivation layer, so that the glass is directly fixed to the light-emitting surface of the LED flip-chip wafer;

[0044] S5. Cutting, cutting the glass-fixed LED flip-chip wafer after step S4 into LED flip-chip packages of corresponding sizes.

...

example 1

[0065] 1. Use acetone as a carrier to evenly spray yellow and red phosphors on the surface of a 5-inch soda-lime silicate glass substrate, heat to a softening temperature of 700°C-720°C, and keep warm for 5 minutes.

[0066] 2. Use magnetron sputtering to form a 1 μm thick SiO2 passivation layer on the light-emitting surface of a 4-inch non-pre-cracked LED flip-chip wafer.

[0067] 3. Plasma cleaning or ultrasonic cleaning of the flip chip and the soda lime silicate glass to be bonded for 5 minutes, followed by rinsing with deionized water for 1-5 minutes.

[0068] 4. Prepare H with a volume ratio of 4:1 2 SO 4 and H 2 o 2 solution, where H 2 SO 4 and H 2 o 2 The mass percent concentration of the solution is 98% and 30%, the solution temperature is 110° C., and the cleaning time is 15 minutes. The materials to be bonded are cleaned twice, and then cleaned with deionized water for 5 minutes.

[0069] 5. Prepare a certain volume ratio of activation solution NH 3 ·H 2 O...

example 2

[0073] 1. Use tetrahydrofuran as a carrier to evenly spray yellow powder and red powder on the surface of a 7-inch borosilicate glass substrate, heat to a softening temperature of 800-900°C, and keep warm for 10 minutes.

[0074] 2. Use MOCVD (chemical vapor deposition) to form a layer of 1 μm thick SiO2 passivation layer on the light-emitting surface of a 6-inch non-pre-cracked LED flip-chip wafer.

[0075] 3. Plasma cleaning or ultrasonic cleaning flip chip and borosilicate glass to be bonded for 5 minutes, rinse with deionized water for 1-5 minutes.

[0076] 4. Put the glass and the LED flip-chip wafer into the plasma processor, use O2 plasma to bombard the passivation layer of the LED flip-chip wafer to be bonded and the surface to be bonded of the borosilicate glass, (plasma Parameter setting of the processing instrument: the vacuum degree of the vacuum chamber is evacuated to 0.1Pa, oxygen is introduced, the processing pressure is 20Pa, 5 minutes, and the processing powe...

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Abstract

The invention relates to a non-organic-glue wafer-level package method and an LED flip chip package body. The package method enables glass having a phosphor layer to be directly bonded to a light output surface of an LED flip chip in a low-temperature bonding manner, so that the whole LED package body is free from organic glue package, and the defects of organic glue package are avoided.

Description

technical field [0001] The invention relates to the field of LED packaging, in particular to an organic glue-free wafer-level packaging method and an LED flip-chip packaging body obtained by the packaging method. Background technique [0002] Nowadays, regardless of the structure of white LED packaging (in-line LED, surface mount LED, COB LED, CSP LED), organic glue is required for potting protection, and organic potting glue (such as silica gel and epoxy resin) During the use of lighting products, under light radiation, the main C-H, H-N, Si-H, C-Cl and other bonds will absorb photon energy, and after a certain period of use, physical properties will change, resulting in The colloid becomes brittle, cracks, and turns yellow, and the color temperature and color coordinates of the light source shift, darken, and eventually die. The use of organic glue-free packaging, such as inorganic material packaging, has extremely high bonding processing temperature (>1000°C), so it n...

Claims

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Application Information

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IPC IPC(8): H01L33/50H01L33/54
CPCH01L33/505H01L33/54H01L2933/0041
Inventor 林丞陈杰
Owner XIAMEN HUALIAN ELECTRONICS CO LTD
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