Tin germanium sulfoselenide thin film and its preparation method, photoelectric conversion device
A technology of sulfur selenide and thin film, which is applied in selenium/tellurium compounds, chemical instruments and methods, elemental compounds other than selenium/tellurium, etc. Efficiency, easy mass production effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0059] Step 1, 1.5224g thioselenourea, 0.0872g CuCl, 0.1504g Zn(Ac) 2 , 0.2338g ZnCl 2 , 0.1072g GeCl 4 , 0.3384g SnCl 2 2H 2 O and 0.527g Cu(CH 3 COO) 2 ·H 2 O was sequentially dissolved into 20 ml of ethylene glycol methyl ether solution, and fully stirred to form a clear precursor solution (x=0.25).
[0060] Step 2. The clarified precursor solution was aged in air at 20° C. and 70% humidity for 6 hours to prepare an aged precursor solution. The aged precursor solution was prepared as a precursor sample thin film on a molybdenum glass substrate by spin coating. The rotational speed of spin coating is 1500 rpm, and the time is 30 seconds. Each spin-coated layer was calcined in air at 400°C for 5 minutes. In order to obtain the optimal film thickness, the spin coating was repeated 11 times.
[0061] Step 3, after spin coating is finished, adopt open device, be 0.5 atmospheric pressure with 12 grams of sulfur powders as sulfur source control sulfur bias, (more than 10...
Embodiment 2
[0063] Step 1, 1.5224g thioselenourea, 0.0872g CuCl, 0.123g Zn(Ac) 2 , 0.2508g ZnCl 2 , 0.0429g GeCl 4 , 0.4062g SnCl 2 2H 2 O and 0.527g Cu(CH 3 COO) 2 ·H 2 O was sequentially dissolved into 20 mL of ethylene glycol methyl ether solution, and fully stirred to form a clear precursor solution (x=0.1).
[0064] Step 2. The clarified precursor solution was placed in air at 20° C. and 70% humidity for 4 hours for aging to prepare an aged precursor solution. The aged precursor solution was prepared as a precursor sample thin film on a molybdenum glass substrate by spin coating. The rotational speed of spin coating is 1500 rpm, and the time is 30 seconds. Each spin-coated layer was calcined in air at 400°C for 5 minutes. In order to obtain the optimal film thickness, the spin coating was repeated 8 times.
[0065] Step 3. After the spin coating is completed, use an open device, use 12 grams of sulfur powder as a sulfur source, and vulcanize under a nitrogen atmosphere at 5...
Embodiment 3
[0067] Step 1, 1.5224g thioselenurea, 0.1504g CuCl, 0.289g Zn(Ac) 2 , 0.1478g ZnCl 2 , 0.1715g GeCl 4 , 0.2708g SnCl 2 2H 2 O and 0.3994g Cu(CH 3 COO) 2 ·H 2 O was sequentially dissolved into 20 mL of ethylene glycol methyl ether solution, and fully stirred to form a clear precursor solution (x=0.4).
[0068] Step 2. The clarified precursor solution was aged in air at 20° C. and 70% humidity for 8 hours to prepare an aged precursor solution. The aged precursor solution was prepared as a precursor sample thin film on a molybdenum glass substrate by spin coating. The rotational speed of spin coating is 1500 rpm, and the time is 30 seconds. Each spin-coated layer was calcined in air at 400°C for 5 minutes. In order to obtain the optimal film thickness, the spin coating was repeated 14 times.
[0069] Step 3. After the spin coating is completed, use an open device, use 12 grams of sulfur powder as a sulfur source, and vulcanize under a nitrogen atmosphere at 580 ° C for ...
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More