Unlock instant, AI-driven research and patent intelligence for your innovation.

Laser-induced cross-scale lithography methods

A laser-induced, cross-scale technology, applied in the field of cross-scale lithography, can solve the problems of reducing circuit density, limiting the feature size of devices, and increasing the cost of exposure systems, achieving the effect of low cost and easy operation

Active Publication Date: 2018-10-02
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Larger registration tolerances reduce circuit density and limit the feature size of the device, thereby reducing the performance of the integrated circuit chip
In order to improve the accuracy of overlay calibration, automatic overlay alignment technology is required, which will lead to a significant increase in the cost of the exposure system

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Laser-induced cross-scale lithography methods
  • Laser-induced cross-scale lithography methods

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] A laser-induced cross-scale photolithography method, the steps of which include:

[0021] 1) Coating a 50nm thick AgInSbTe film 2 on the quartz glass 1 by magnetron sputtering;

[0022] 2) The above-mentioned AgInSbTe thin film 2 is subjected to cross-scale photolithography using a laser direct writing system, the laser wavelength used is 405nm; the numerical aperture of the lens 7 is 0.8; the writing speed is 2m / s.

[0023] 3) immersing the above-mentioned AgInSbTe film in an ammonium sulfide aqueous solution with a mass fraction of 17wt.% and corroding for 30 to 300 seconds;

[0024] The schematic diagram of cross-scale photolithography coated with AgInSbTe film is as follows figure 1 As shown, in the example, AgInSbTe thin film is used as the graphic layer with a thickness of 50nm, which is plated on the surface of quartz glass.

[0025] When the focused laser beam irradiates the AgInSbTe film, the film absorbs the laser energy and is heated, and then the film unde...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a laser induced cross-scale lithography method. When a collimated laser beam focuses on a lithography material, laser energy and lithography speed are regulated, so as to change a phase-change thermal threshold effect and thermal diffusion to obtain a multi-scale structure changing from nanoscale to microscale, and the structure is formed once. The laser induced cross-scale lithography method is easy and practical, has no complex operations, and is particularly suitable for manufacturing mask plates with different line widths (ranging from nanoscale to microscale). The method can replace a mask overlay exposure process in a semiconductor industry, so as to prevent graphic errors caused by many times of overlay.

Description

technical field [0001] The invention relates to a cross-scale photolithography method, in particular to a photolithography method spanning from micron scale to nano scale based on laser-induced phase change thermal threshold and thermal diffusion effect. Background technique [0002] With the rapid development of information technology, the size of the chip is required to be smaller and smaller, the power consumption is continuously reduced, and the speed of processing information is faster and faster. This puts forward higher requirements on the manufacturing process of the chip, that is, the smaller the minimum feature size, the better. In the chip manufacturing process, due to the different line widths of the structures on the chip, it spans from the micrometer scale to the nanometer scale. Therefore, the traditional chip mask includes an optical mask and an electron beam mask, that is, the circuit structure with a line width in the micron scale is made by low-cost laser...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20B82Y40/00
CPCB82Y40/00G03F7/70383
Inventor 魏劲松魏涛
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI