Transient voltage suppressor and manufacturing method thereof
A technology of transient voltage suppression and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, circuits, etc., can solve the problems of low chip integration, low ESD resistance, large main device, etc., to improve stability , The effect of chip area reduction and yield improvement
Active Publication Date: 2017-11-24
WUXI CHINA RESOURCES MICROELECTRONICS
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Problems solved by technology
[0005] The traditional TVS diode manufacturing process is relatively simple, using micron-level process technology for discrete devices, such as junction isolation technology and local silicon oxidation isolation technology, resulting in low integration of this type of chip, small anti-ESD capability per unit area, and low reliability of the main device. The capacitance is large, generally above 30PF. Obviously, this type of traditional TVS diode cannot be satisfied with the protection of USB3. Applications such as devices, because these applications require TVS chips to have high current discharge capability and low capacitance, to meet the requirements for electrostatic protection and to meet the integrity requirements of data transmission
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[0028] Further description will be given below in conjunction with the accompanying drawings and embodiments.
[0029] Step S101: sequentially forming a stacked N+-type single crystal silicon substrate, an N-type silicon epitaxial layer, a buffer oxide layer and a silicon nitride layer. like figure 2 As shown, specifically, an N-type silicon epitaxial layer 102 is epitaxially grown on a high-concentration N+ type single crystal silicon 101 . A buffer oxide layer 103 is chemically vapor deposited on the surface of the epitaxial layer 102 . A silicon nitride layer 104 is deposited on the buffer oxide layer 103 by a plasma enhanced chemical vapor method. Wherein, the thickness of the epitaxial layer 102 is 9-11 microns, and 10 microns is used in this embodiment. The thickness of the silicon nitride layer 104 is 1.8-2.2 microns, and 2 microns is used in this embodiment. The buffer oxide layer is generally a silicon dioxide layer formed by thermal oxidation of silicon, which a...
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The invention relates to a transient voltage suppressor and a manufacturing method thereof. The transient voltage suppressor comprises a main Zener diode and at least one pair of first diode and second diode, and the first diode and the second diode are connected in series. The method comprises the steps of sequentially forming an N<+>-type single-crystal silicon substrate, an N-type silicon epitaxial layer, a buffer oxide layer and a silicon nitride layer which are sequentially laminated; forming a plurality of first grooves in the epitaxial layer, wherein the plurality of first grooves are used for isolating regions which are used for forming the first diode, the second diode and the main Zener diode; forming a plurality of second grooves in the epitaxial layer, wherein the plurality of second grooves are used for isolating corresponding doping regions on the regions where the first diode, the second diode and the main Zener diode are formed; and forming the first diode, the second diode and the main Zener diode. By the method, the formed device has high current release capability and low capacitance.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a transient voltage suppressor and a manufacturing method thereof. Background technique [0002] With the development of electronic information technology, semiconductor devices are increasingly miniaturized, high-density and multi-functional, especially portable consumer electronic products have strict requirements on the motherboard area, and also require fast device response time to meet high-speed data lines. Transmission, but also to ensure that the device will not be degraded after being subjected to multiple voltage and current transient interferences to ensure the quality of electronic equipment. [0003] Transient Voltage Suppressor (TVS for short), as a silicon PN junction high-efficiency protection device, was created to solve these problems. The high package integration of TVS devices is suitable for the tight circuit board of portable devices. When subjected ...
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IPC IPC(8): H01L27/02H01L29/06H01L21/82
CPCH01L21/82H01L27/02H01L29/06
Inventor 陈天顾勇于绍欣张旭廖永亮
Owner WUXI CHINA RESOURCES MICROELECTRONICS