GaN hetero-junction longitudinal inverse-conduction field effect tube

Abstract

The invention relates to the technical field of semiconductor devices, and relates to a GaN hetero-junction inverse-conduction field effect tube. According to the invention, a longitudinal discrete gate structure is adopted; a schottky source electrode is deposited between the gate electrodes so as to form an anode of an inverse-conduction diode; and through the joint action of the back barrier formed in the p-type base region and the p-type gate, the two-dimensional electron gas (2 DEG) below the gate can be depleted; and through the adjustment of the re-growth thickness of the ALMN barrier layer, the threshold voltage can be accurately regulated and controlled. The effect tube has the beneficial effects that under the working state of a forward switch, the threshold voltage is adjustable, that the on-resistance is low, that the saturation current is large, that the off-state withstanding voltage is high, and that working frequency is high and power consumption is low and the like; and under the inverse-conduction working state, the starting voltage is low, the on-resistance is low, the inverse withstanding voltage is large, the inverse recovery time is short, and the power consumption is low and the like. Meanwhile, the manufacturing process is compatible with a traditional GaN hetero-junction HEMT device and is particularly suitable for a GaN hetero-junction longitudinal power field effect tube.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, and relates to a GaN heterojunction power field effect transistor. Background technique [0002] As a typical representative of the third-generation wide-bandgap semiconductor, gallium nitride (GaN) has many excellent characteristics: high critical breakdown electric field (~3.5×10 6 V / cm), high electron mobility (~2000cm 2 / vs), high two-dimensional electron gas (2DEG) concentration (~10 13 cm -2 ) and good high temperature working ability, etc. High electron mobility transistor (HEMT) based on AlGaN / GaN heterojunction (or heterojunction field effect transistor HFET, modulation doped field effect transistor MODFET, hereinafter collectively referred to as HEMT devices) has been used in wireless communication, satellite communication and other radio frequency / Microwave field. In addition, such devices based on wide-bandgap GaN materials have the characteristics of high off-stat...

AI Technical Summary

Problems solved by technology

However, discrete freewheeling diodes not only increase the size and cost of the system, but also increase the parasitic capacitance and parasitic inductance, resulting in increased switching losses

Traditional GaN PN junction diodes are not suitable for use as freewheeling diodes due to their high turn-on voltage and low hole mobility of P-type GaN.

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