Method for preparing cube silicon carbide coating

A cubic silicon carbide and coating technology, applied in coating, metal material coating process, gaseous chemical plating and other directions, can solve the problem of shortening the service life of graphite materials, and achieve widening the applicable field, preventing etching, and improving the use of effect of life
CN107513698AActive Publication Date: 2017-12-26WUHAN UNIV OF TECH
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
WUHAN UNIV OF TECH
Publication Date
2017-12-26

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Abstract

The invention discloses a method for preparing a cube silicon carbide coating. The method includes the following steps that (1) a graphite substrate is put into a substrate base of a cold-wall-type laser chemical vapor deposition device, vacuum pumping is conducted, and the intensity of pressure is dropped to 10Pa or below; (2) H2 is connected in to serve as diluent gas; (3) lasers are started to irradiate the surface of the graphite substrate, and the temperature of graphite can be raised quickly by adjusting the laser power; (4) current-carrying gas containing precursor HMDS is connected in, the vacuum degree of a reaction chamber is adjusted to 2500-4500Pa, and the process is kept for 10-30min; and (5) the lasers, the HMDS and the diluent gas are shut down, vacuum pumping is performed and natural cooling is conducted to an indoor temperature. According to the method, the thin film obtained through deposition refers to a cube silicon carbide (beta-SiC) thin film; and under the different deposition conditions, the beta-SiC thin films of different microstructures can be formed, the surface wettability of graphite materials can be controlled and adjusted, and the method is suitable for being applied and popularized.
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Description

technical field

[0001] The invention belongs to the field of inorganic material structure control, and in particular relates to a preparation method of a cubic silicon carbide coating. Background technique

[0002] Graphite (melting point: 3850°C) has high temperature resistance, low coefficient of thermal expansion, and high strength, and is widely used as supports or reaction crucibles in high-temperature reaction furnaces in the semiconductor industry. However, in actual production, it is often necessary to contain H in the high temperature reaction furnace 2 , O 2 , NH 3 Operate under atmosphere. But when the temperature in the reaction furnace rises above 1000°C, H 2 , O 2 , NH 3 Such atmospheres will quickly react with graphite to etch the graphite material and shorten the service life of the graphite material. On the other hand, graphite is a material with relatively high porosity, with a porosity of about 10-23%. After the high-temperature metal melt contacts ...

Claims

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