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Method for directly preparing high-purity silicon and titanium-silicon alloy from titanium-silicon materials

A technology of titanium-silicon alloy and titanium-silicon, which is applied in the field of high-efficiency comprehensive resource utilization of titanium-silicon materials, can solve problems such as poor chemical composition uniformity, macroscopic and microscopic segregation of alloys, and structural defects, and achieve shortened reaction time, high silicon recovery rate, The effect of the short process

Inactive Publication Date: 2018-01-12
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, titanium and titanium alloys have high chemical activity, and are easy to react with various gases and refractory materials during smelting; at the same time, the obtained alloys are prone to macroscopic and microscopic segregation, poor chemical composition uniformity, and structural defects; therefore, it is necessary to seek a way to prepare high-quality titanium alloys The process is very urgent

Method used

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  • Method for directly preparing high-purity silicon and titanium-silicon alloy from titanium-silicon materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Such as figure 1 Shown, this titanium-silicon material directly prepares the method for high-purity silicon and titanium-silicon alloy, and its concrete steps are as follows:

[0025] (1) Pretreatment: According to the hypereutectic titanium-silicon alloy (containing the following components, titanium: 23%, iron: 288ppmw, phosphorus: 86ppmw, boron: 22ppmw, and the balance is silicon), a total of 100g; weighed titanium and Silicon is crushed to about 20 meshes, mixed evenly and placed in a high-purity graphite crucible with a diameter of Φ35mm and a height of 150mm.

[0026] (2) Electromagnetic induction heating and melting: place the graphite crucible in the electromagnetic directional solidification induction furnace, and control the pressure in the furnace to 10 -3 Pa, the temperature is 1400 ℃ under the condition of electromagnetic induction heating and melting.

[0027] (3) Vacuum volatilization, refining and impurity removal: the pressure in the furnace is contro...

Embodiment 2

[0031] Such as figure 1 Shown, this titanium-silicon material directly prepares the method for high-purity silicon and titanium-silicon alloy, and its concrete steps are as follows:

[0032] (1) Pretreatment: Weigh 100g of hypereutectic titanium-silicon alloy (including the following components: titanium: 20wt%, iron: 288 ppmw, phosphorus: 86ppmw, boron: 22ppmw, and the balance is silicon); crush to about 30 mesh , mixed evenly, put into a high-purity graphite crucible with a diameter of Φ35mm and a height of 150mm,

[0033] (2) Electromagnetic induction heating and melting: place the graphite crucible in the electromagnetic directional solidification induction furnace, and control the pressure in the furnace to 10-3 Pa, the temperature is 1500 ℃ under the condition of electromagnetic induction heating and melting.

[0034] (3) Vacuum volatilization and refining: the pressure in the furnace is controlled at 10 -3 pa; the temperature is 1500°C, the molten state is kept for 3 ...

Embodiment 3

[0038] Such as figure 1 Shown, this titanium-silicon material directly prepares the method for high-purity silicon and titanium-silicon alloy, and its concrete steps are as follows:

[0039] (1) Pretreatment: Weigh 100g of hypereutectic titanium-silicon alloy (including the following components, titanium: 15wt%, iron: 288ppmw, phosphorus: 86ppmw, boron: 22ppmw, and the balance is silicon); the weighed titanium and Silicon is crushed to about 50 meshes, mixed evenly, and put into a high-purity graphite crucible with a diameter of Φ35mm and a height of 150mm.

[0040] (2) Electromagnetic induction heating and melting: place the graphite crucible in the electromagnetic directional solidification induction furnace, and control the pressure in the furnace to 10 -3 Pa, the temperature is 1600 ℃ under the condition of electromagnetic induction heating and melting.

[0041] (3) Vacuum distillation, refining and impurity removal: the electromagnetic induction furnace is vacuumed to 1...

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Abstract

The invention relates to a method for directly preparing high-purity silicon and titanium-silicon alloy from titanium-silicon materials, and belongs to the technical field of efficient and comprehensive utilization of titanium-silicon material resources. Titanium-silicon materials with different contents of silicon are adopted as raw materials, electromagnetic induction is adopted for heating andmelting, and vacuum volatilization is conducted on the molten alloy materials under air pressure for refining and impurity removal; electromagnetic stirring is conducted on the molten materials obtained after the impurity removal for directional solidification and strengthened separation, and during the directional solidification, silicon which is preferentially precipitated deposits on the bottomof a crucible under the action of an electromagnetic stirring force and a temperature gradient; however, a titanium-silicon alloy phase is precipitated on the upper part of the crucible, and two products, the high-purity silicon and the titanium-silicon alloy, are obtained; the products is cut along an interface of separation, and the high-purity silicon with low contents of boron and phosphorusand the titanium-silicon alloy with low content of iron are obtained. According to the method for directly preparing the high-purity silicon and the titanium-silicon alloy from the titanium-silicon materials, the purity of the obtained high-purity silicon is more than 99.995%, and the content of titanium in the titanium-silicon alloy is 20-30%; compared with a traditional preparation technology of the high-purity silicon and the titanium-silicon alloy, the method has the advantages of being short in process, low in cost and the like, and mass production is easy to achieve.

Description

technical field [0001] The invention relates to a method for directly preparing high-purity silicon and titanium-silicon alloys from titanium-silicon materials, and belongs to the technical field of comprehensive utilization of high-efficiency resources of titanium-silicon materials. technical background [0002] As a renewable, non-polluting, and inexhaustible new energy source, solar photovoltaic power generation has become an important development direction for commercial development and utilization in countries all over the world. The optoelectronic devices in solar photovoltaic technology are all made of crystalline silicon with a purity requirement of 99.9999% (6N). At present, the production cost of solar grade silicon at home and abroad is relatively high, the relative energy consumption is large, the process route is long, and the pollution is large. Therefore, how to prepare solar-grade polysilicon at low cost and more economically and environmentally friendly is a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/037C22C1/02C22C14/00
Inventor 马文会朱奎松魏奎先雷云吕国强伍继君杨斌戴永年
Owner KUNMING UNIV OF SCI & TECH
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