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Organic photoelectric detector for image sensor and manufacturing method thereof

A photodetector and image sensor technology, applied in photovoltaic power generation, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as narrow spectral response range, and achieve the effects of improving photocurrent, simple process, and expanding spectral response range.

Inactive Publication Date: 2018-01-26
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a kind of organic photodetector that is used for image sensor, has solved the problem that the spectral response range of existing organic photodetector is narrow

Method used

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  • Organic photoelectric detector for image sensor and manufacturing method thereof
  • Organic photoelectric detector for image sensor and manufacturing method thereof
  • Organic photoelectric detector for image sensor and manufacturing method thereof

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preparation example Construction

[0041] A method for preparing an organic photodetector for an image sensor of the present invention, specifically comprising the following steps:

[0042] Step 1: first coat the ITO electrode layer 2 on the glass substrate 1, then use wet method to clean the glass substrate 1 coated with the ITO electrode layer 2, and then dry it with pure nitrogen or infrared;

[0043] The wet cleaning process is as follows:

[0044] Firstly, the glass substrate 1 is ultrasonically cleaned with deionized water for 25 minutes to 35 minutes, then the glass substrate 1 is ultrasonically cleaned with acetone for 25 minutes to 35 minutes, and finally, the glass substrate 1 is ultrasonically cleaned with absolute ethanol for 25 minutes to 35 minutes.

[0045] Step 2: The glass substrate 1 treated in step 1 is cleaned with ultraviolet ozone light, and then placed in a vacuum evaporation chamber to evaporate MoO 3 Layer and NPB layer, form anode buffer layer 3 on glass substrate 1;

[0046] During ...

Embodiment 1

[0059] Step 1: first coat the ITO electrode layer 2 on the glass substrate 1, then use a wet method to clean the glass substrate 1 coated with the ITO electrode layer 2, and dry it with pure nitrogen or infrared;

[0060] The wet cleaning process is as follows:

[0061] Firstly, the glass substrate 1 is ultrasonically cleaned with deionized water for 30 minutes, then the glass substrate 1 is ultrasonically cleaned with acetone for 30 minutes, and finally, the glass substrate 1 is ultrasonically cleaned with absolute ethanol for 30 minutes.

[0062] Step 2: Clean the glass substrate 1 treated in step 1 with ultraviolet ozone light, and then place it in a vacuum evaporation chamber to evaporate MoO 3 Layer and NPB layer, form anode buffer layer 3 on glass substrate 1;

[0063] During the evaporation process, the rotation speed of the turntable carrying the glass substrate 1 is 15r / min, the temperature of the glass substrate 1 is 50°C, and the MoO 3 The evaporation source tempe...

Embodiment 2

[0075] Step 1: first coat the ITO electrode layer 2 on the glass substrate 1, then use a wet method to clean the glass substrate 1 coated with the ITO electrode layer 2, and dry it with pure nitrogen or infrared;

[0076] The wet cleaning process is as follows:

[0077] Firstly, the glass substrate 1 is ultrasonically cleaned with deionized water for 30 minutes, then the glass substrate 1 is ultrasonically cleaned with acetone for 30 minutes, and finally, the glass substrate 1 is ultrasonically cleaned with absolute ethanol for 30 minutes.

[0078] Step 2: Clean the glass substrate 1 treated in step 1 with ultraviolet ozone light, and then place it in a vacuum evaporation chamber to evaporate MoO 3 layer and NPB layer, forming an anode buffer layer 3 on the glass substrate 1;

[0079] During the evaporation process: the rotation speed of the turntable carrying the glass substrate 1 is 15r / min, the temperature of the glass substrate 1 is 50°C, and the MoO 3 The evaporation so...

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Abstract

The invention discloses an organic photoelectric detector for an image sensor. The organic photoelectric detector comprises a glass substrate, wherein an upper surface of the glass substrate is provided with an ITO electrode layer, the upper surface of the glass substrate is sequentially coated with an anode buffer layer, a front absorption layer, a main body active layer, a cathode buffer layer and an Al electrode layer from down to up, the anode buffer layer is composed of a MoO3 layer and an NPB layer, the front absorption layer is a P3HT layer, the main body active layer is a composite layer of an electron donor material PBDT-TT-F and an electron acceptor material PC71BM, and the cathode buffer layer is composed of a BCP layer and a MoO3 layer. The absorption spectrum complementation principle is utilized, and the response scope is further expanded. The invention further discloses a manufacturing method of the organic photoelectric detector, the process is simple, and equipment requirements are low.

Description

technical field [0001] The invention belongs to the technical field of organic semiconductors, and relates to an organic photodetector used for an image sensor, and also relates to a preparation method of the organic photodetector. Background technique [0002] With the miniaturization, intelligence and digitalization of electronic products, it is necessary to increase the circuit integration of image sensors, improve the characteristics of pixel units, and reduce the unit area to achieve miniaturization, intelligence, low power consumption and low cost. "camera-on-a-chip" system. The development of the organic thin film device industry, especially in the fields of display and lighting, has opened a door for image sensing technology. The application of organic photodetectors in the field of image sensing is one of the key technologies to meet the requirements of image sensing. [0003] Most of the existing organic photodetectors have a narrow spectral response range, and s...

Claims

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Application Information

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IPC IPC(8): H01L51/46H01L51/42H01L51/48
CPCY02E10/549Y02P70/50
Inventor 安涛吴俊宇
Owner XIAN UNIV OF TECH
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