Organic photoelectric detector for image sensor and manufacturing method thereof
A photodetector and image sensor technology, applied in photovoltaic power generation, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as narrow spectral response range, and achieve the effects of improving photocurrent, simple process, and expanding spectral response range.
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[0041] The method for preparing an organic photodetector for image sensors of the present invention specifically includes the following steps:
[0042] Step 1: First coat the ITO electrode layer 2 on the glass substrate 1, and then clean the glass substrate 1 coated with the ITO electrode layer 2 by a wet method, and then dry it with pure nitrogen or infrared drying;
[0043] The process of wet cleaning is as follows:
[0044] First, use deionized water to ultrasonically clean the glass substrate 1 for 25 to 35 minutes, then use acetone to ultrasonically clean the glass substrate 1 for 25 to 35 minutes, and finally use absolute ethanol to ultrasonically clean for 25 to 35 minutes.
[0045] Step 2: The glass substrate 1 treated in step 1 is cleaned with ultraviolet ozone light, and then placed in a vacuum evaporation chamber to vaporize MoO 3 Layer and NPB layer, forming an anode buffer layer 3 on the glass substrate 1;
[0046] During the evaporation process: the rotating speed of the t...
Example Embodiment
[0058] Example 1
[0059] Step 1: First coat the ITO electrode layer 2 on the glass substrate 1, and then clean the glass substrate 1 coated with the ITO electrode layer 2 by a wet method, and dry it with pure nitrogen or infrared drying;
[0060] The process of wet cleaning is as follows:
[0061] First, use deionized water to ultrasonically clean the glass substrate 1 for 30 minutes, then use acetone to ultrasonically clean the glass substrate 1 for 30 minutes, and finally use absolute ethanol to ultrasonically clean for 30 minutes.
[0062] Step 2: The glass substrate 1 treated in step 1 is cleaned with ultraviolet ozone light, and then placed in a vacuum evaporation chamber to vaporize MoO 3 Layer and NPB layer, forming an anode buffer layer 3 on the glass substrate 1;
[0063] During the evaporation process, the rotating speed of the turntable carrying the glass substrate 1 is 15r / min, and the temperature of the glass substrate 1 is 50℃. 3 The evaporation source temperature of the ...
Example Embodiment
[0074] Example 2
[0075] Step 1: First coat the ITO electrode layer 2 on the glass substrate 1, and then clean the glass substrate 1 coated with the ITO electrode layer 2 by a wet method, and dry it with pure nitrogen or infrared drying;
[0076] The process of wet cleaning is as follows:
[0077] First, use deionized water to ultrasonically clean the glass substrate 1 for 30 minutes, then use acetone to ultrasonically clean the glass substrate 1 for 30 minutes, and finally use absolute ethanol to ultrasonically clean for 30 minutes.
[0078] Step 2: The glass substrate 1 treated in step 1 is cleaned with ultraviolet ozone light, and then placed in a vacuum evaporation chamber to vaporize MoO 3 Layer and NPB layer, forming an anode buffer layer 3 on the glass substrate 1;
[0079] During the evaporation process: the rotating speed of the turntable carrying the glass substrate 1 is 15r / min, the temperature of the glass substrate 1 is 50 ℃, MoO 3 The evaporation source temperature of the...
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