Ridge semiconductor laser and manufacturing method thereof
A technology of semiconductors and lasers, applied in the field of ridge semiconductor lasers and their production, can solve the problems of reducing the slope efficiency and output power of lasers, hindering the application of GaN-based lasers, reducing carrier injection efficiency, etc., so as to improve injection efficiency Effect
Active Publication Date: 2019-09-20
HANGZHOU HONGSHI TECH
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Problems solved by technology
However, due to the fact that the current will expand to both sides of the ridge during the injection process, the injection efficiency of carriers is reduced, the slope efficiency and output power of the laser are reduced, and the application of GaN-based lasers in real life is hindered.
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[0025] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, the embodiments are provided to explain the principles of the invention and its practical application, thereby enabling others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to particular intended uses.
[0026] refer to figure 1 The ridge-shaped semiconductor laser provided in this embodiment includes a substrate 10, an epitaxial structure 20 is formed on the top of the substrate 10, and a ridge-shaped semiconductor layer 21 is formed on the top of the epitaxial structure 20, and the ridge-shaped semiconductor layer 21 includes a ridge portion 210 and The first stepped portion 211 and the second stepped portion 212 located o...
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The present invention provides a ridge semiconductor laser. The laser comprises a substrate and an epitaxial structure formed on the substrate, a ridge semiconductor layer is arranged at the top of the epitaxial structure, and the ridge semiconductor layer comprises a ridge portion and a first step portion and a second step portion which are located at two sides of the ridge portion; and the ion implantation technology is applied to the two sides of the ridge portion and the upper surfaces of the first step portion and the second step portion to form ion implanted layers at the two sides of the ridge portion and the upper surfaces of the first step portion and the second step portion. The semiconductor laser can suppress expansion of carriers to two sides of the ridge so as to improve implantation efficiency of the carriers. In addition, a P-type AlGaN upper limit layer and an N-type AlGaN ion-implanted layer form a P-N junction, when a laser works in a forward direction, the P-N junction works in a reverse direction with small leakage, and even if the laser has no an insulation layer, a current can be prevented from implantation from two sides of the ridge portion.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a ridge semiconductor laser and a manufacturing method thereof. Background technique [0002] With the development of the first-generation and second-generation semiconductors, the third-generation semiconductors have emerged, especially group III nitride semiconductors GaN, AlN, InN and their ternary and quaternary alloy compounds with high critical breakdown voltage, dielectric It has excellent physical and chemical properties such as small constant, strong radiation resistance, high electron mobility and good chemical stability, and has great application value in the fields of optoelectronics and microelectronics. GaN-based semiconductor materials have high internal and external quantum efficiency, high luminous efficiency, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength and high hardness, and are c...
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IPC IPC(8): H01S5/227H01S5/323
Inventor 黄莹李德尧刘建平张立群张书明杨辉
Owner HANGZHOU HONGSHI TECH