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High electron mobility spin field effect transistor and its preparation method

A field effect transistor and high electron mobility technology, applied in the field of high electron mobility spin field effect transistor and its preparation, can solve the problems of low spin injection efficiency and affecting device performance, so as to improve efficiency and performance Effect

Active Publication Date: 2020-09-08
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the general spin field effect transistor injects spin electrons into semiconductors by ferromagnetic materials, but the efficiency of spin injection is very low due to the mismatch of energy band structures of ferromagnetic materials such as Fe and semiconductor materials such as Sm, which seriously affect the performance of the device

Method used

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  • High electron mobility spin field effect transistor and its preparation method
  • High electron mobility spin field effect transistor and its preparation method
  • High electron mobility spin field effect transistor and its preparation method

Examples

Experimental program
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Embodiment 1

[0047] See figure 1 , figure 1 A flow chart of a method for manufacturing a high electron mobility spin field effect transistor provided in an embodiment of the present invention, wherein the method includes:

[0048] (a) Select 4H-SiC substrate;

[0049] (b) growing N-type Ga on the 4H-SiC substrate 2 o 3 epitaxial layer;

[0050] (c) In the N-type Ga 2 o 3 Fabricate source and drain regions in the epitaxial layer;

[0051] (d) forming electrodes on the surfaces of the source region and the drain region;

[0052] (e) In the N-type Ga 2 o 3 A gate is fabricated on the epitaxial layer to complete the fabrication of the transistor.

[0053] Preferably, before step (b), it also includes:

[0054] The 4H-SiC substrate was ultrasonically cleaned using acetone and alcohol.

[0055] Preferably, step (b) can be:

[0056]Using Ga with a mass fraction of 99.99999% as the evaporation source and Sn with a mass fraction of 99.999% as the dopant source, grow N-type Ga on the 4H...

Embodiment 2

[0085] Please refer to Figure 2a-Figure 2g , Figure 2a-Figure 2g It is a schematic diagram of a preparation method of a high electron mobility spin field effect transistor according to an embodiment of the present invention, and the preparation method includes the following steps:

[0086] Step 1, selecting a substrate 201 . Select 4H-SiC substrate 201, such as Figure 2a shown.

[0087] Step 2, growing Ga on the surface of the 4H-SiC substrate 201 2 o 3 epitaxial layer 202 . Using Ga with a mass fraction of 99.99999% as the evaporation source and Sn with a mass fraction of 99.999% as the doping source, a 4H-SiC substrate with a thickness of 0.4 μm and a doping concentration of 1×10 was grown on the MBE process. 14 -1×10 16 cm -3 N-type Ga 2 o 3 epitaxial layer 202, such as Figure 2b shown.

[0088] Step 3, in N-type Ga 2 o 3 An Al barrier layer 203 is grown on the epitaxial layer 202 . Using CVD process, in Ga 2 o 3 An Al barrier layer 203 with a thickness...

Embodiment 3

[0094] Please refer to image 3 , image 3 A schematic structural diagram of an SOI-based lateral double-channel power solid-state plasma PiN diode provided by an embodiment of the present invention. The luminous tube adopts the above-mentioned Figure 2a-Figure 2g prepared as indicated. Specifically, the diode includes: 4H-SiC substrate 301, N-type Ga 2 o 3 Epitaxial layer 302, source 303, drain 304, gate 305 and SiO 2 isolation layer 306 .

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Abstract

The invention relates to a high-electron-mobility spin field effect transistor and a preparation method therefor. The preparation method comprises the steps of selecting a 4H-SiC substrate; enabling an N type Ga<2>O<3> epitaxial layer to be grown on the 4H-SiC substrate; manufacturing a source region and a drain region in the N type Ga<2>O<3> epitaxial layer; manufacturing electrodes on the surfaces of the source region and the drain region to complete preparation of a source and a drain; and manufacturing a gate on the N type Ga<2>O<3> epitaxial layer to complete preparation of the transistor. The high-electron-mobility spin field effect transistor provided by the invention adopts the N type Ga<2>O<3> material as the source, drain and channel material, so that spin injection and receivingefficiency can be greatly improved, thereby improving the performance of the device.

Description

technical field [0001] The invention relates to the field of design and manufacture of semiconductor devices, in particular to a spin field effect transistor with high electron mobility and a preparation method thereof. Background technique [0002] With the rapid update of modern electronic technology, the development of traditional electronic devices has severely restricted the development of microelectronics science in terms of scale integration and computing speed. The emerging spintronics aims to conveniently regulate the spin of electrons, opening up a new field of information storage and transmission by using spin of electrons, which has caused research in multiple scientific fields such as physics, materials science and electronic information science. common concerns and broad interests of readers. [0003] In recent years, the spin field effect transistor proposed based on two-dimensional electron gas, its theoretical and experimental research involves complex fact...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L29/66H01L29/22H01L21/335
CPCH01L29/22H01L29/66431H01L29/66984H01L29/778
Inventor 贾仁需杨宇元磊张玉明彭博
Owner XIDIAN UNIV