Preparation method and application of homogenous barrier layer/frame titanium dioxide structure

A technology of titanium dioxide and barrier layer is applied in the field of photoanode preparation, which can solve the problems of low electron transmission efficiency and easy recombination of photoelectrons, and achieve the effects of shortening electron transmission distance, avoiding grain boundary charge transfer resistance and improving transmission efficiency.

Active Publication Date: 2018-02-09
HARBIN INST OF TECH
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that the existing mesoporous materials are used as photoanodes of sensitized solar cells with low electron transmission efficiency and photoelectrons are prone to recombination during the transmission process, and provide a homogeneous barrier layer / skeleton titanium dioxide structure The preparation method and its application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method and application of homogenous barrier layer/frame titanium dioxide structure
  • Preparation method and application of homogenous barrier layer/frame titanium dioxide structure
  • Preparation method and application of homogenous barrier layer/frame titanium dioxide structure

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0036] Specific implementation mode 1: This implementation mode is a preparation method of a homogeneous barrier layer / skeleton titanium dioxide structure, which is specifically completed according to the following steps:

[0037] 1. The conductive substrate is ultrasonically cleaned in toluene, acetone, absolute ethanol and deionized water in sequence, then rinsed with absolute ethanol for 2 to 4 times, and finally dried with nitrogen to obtain a conductive substrate with impurities removed;

[0038] 2. Preparation of barrier layer reaction solution:

[0039] 1. Adding hydrochloric acid with a mass fraction of 32% to 35% into distilled water, stirring evenly, to obtain a hydrochloric acid solution;

[0040] The mass fraction described in step 2 ① is that the volume ratio of hydrochloric acid and distilled water of 32%~35% is (0.5~2.3):1;

[0041] ②. Heat the hydrochloric acid solution obtained in step 2 ① to 40°C-70°C, then add tetrabutyl titanate dropwise at a temperature o...

specific Embodiment approach 2

[0059] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the conductive substrate described in step 1 is FTO conductive glass, ITO conductive glass or flexible graphene substrate. Others are the same as the first embodiment.

specific Embodiment approach 3

[0060] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is: in step one, the frequency of ultrasonic cleaning of the conductive substrate in toluene is 30 kHz to 90 kHz, the time of ultrasonic cleaning is 15 min to 60 min, and the conductive substrate is cleaned in acetone The frequency of ultrasonic cleaning in the medium is 30kHz~90kHz, and the time of ultrasonic cleaning is 15min~60min. The frequency of ultrasonic cleaning is 30kHz-90kHz, and the time of ultrasonic cleaning is 15min-60min. Others are the same as those in Embodiment 1 or 2.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a preparation method and application of a photo-anode, in particular, a preparation method and application of a homogenous barrier layer / frame titanium dioxide structure. Theinvention mainly aims to solve the problems of low electron transport efficiency and susceptibility of photoelectrons to recombination of a dye-sensitized solar cell with a mesoporous material-made photo-anode. The method includes the following steps that: 1, an impurity-removed conductive substrate is prepared; 2, a barrier layer reaction liquid is prepared; 3, a barrier layer / substrate is prepared; and 4, a TiO2 frame is prepared, so that the homogenous barrier layer / frame TiO2 structure can be obtained. The homogenous barrier layer / frame titanium dioxide structure prepared by using the preparation method can be used as the photo-anode of a dye-sensitized solar cell. With the method adopted, the homogenous barrier layer / frame titanium dioxide structure can be obtained.

Description

technical field [0001] The invention relates to a preparation method and application of a photoanode. Background technique [0002] In recent years, with the continuous increase of people's demand for energy and the continuous reduction of fossil fuel reserves, it has become one of the important topics of current scientific research to find a new source of abundant, green and environmentally friendly energy. As an inexhaustible natural energy source, solar energy is attracting more and more attention all over the world, among which solar cells can directly convert solar energy into electrical energy, which has become a research hotspot at present. [0003] Quantum dot sensitized solar cell (QDSSC) is a new type of solar cell developed based on dye sensitization system, which has the following advantages: 1. Adjustable band gap and high photostability; 2. Exciton multiplication effect; 3. Large extinction coefficient and intrinsic dipole moment promote the separation of elec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/20
CPCY02E10/542H01G9/2031
Inventor 姜兆华李东琦姚忠平夏琦兴张凌儒孟艳秋戴鹏程
Owner HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap