Low-pressure oxidation technology for solar cell
A technology of solar cell sheet and oxidation process, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of PN junction junction depth becoming shallower and lower cost, and high-efficiency photoelectric conversion of batteries, so as to improve photoelectric conversion efficiency and lifespan. Effect of increasing short-circuit current and open-circuit voltage
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Embodiment 1
[0026] The first step, the diffused polycrystalline cell is wet etched to remove the silicon dioxide film and edge PN junction generated during the diffusion process, and the etched cell is inserted back into the quartz boat and sent to the low voltage Diffusion furnace
[0027] The second step, after the furnace door is closed, raise the temperature from the furnace mouth to the furnace end to 650°C, the heating time is 500s, and at the same time, 3000sccm of nitrogen has been injected, and the pressure is maintained at 1030mbar;
[0028] The third step, the main pumping step time is 400s, the temperature is maintained at 650℃, and the pressure in the furnace tube is pumped to 100mbar;
[0029] The fourth step, the leak detection step time is maintained for 100s, the temperature is still maintained at 650℃, and the pressure is restored to 1030mbar to ensure good sealing of the low pressure furnace tube;
[0030] In the fifth step, the evacuation step time is maintained at 200s, the p...
Embodiment 2
[0036] The first step, the diffused polycrystalline cell is wet etched to remove the silicon dioxide film and edge PN junction generated during the diffusion process, and the etched cell is inserted back into the quartz boat and sent to the low voltage Diffusion furnace
[0037] In the second step, after the furnace door is closed, the temperature from the furnace mouth to the furnace end is raised to 780℃, the heating time is 1000s, and at the same time 3000sccm of nitrogen is continuously injected, and the pressure is maintained at 1100mbar;
[0038] The third step, the main pumping step time is 400s, the temperature is maintained at 780℃, and the pressure in the furnace tube is pumped to 110mbar;
[0039] The fourth step, the leak detection step time is maintained for 300s, the temperature is still maintained at 780℃, and the pressure is restored to 1100mbar to ensure good sealing of the low pressure furnace tube;
[0040] The fifth step, the evacuation step time is maintained at 6...
Embodiment 3
[0046] The first step, the diffused polycrystalline cell is wet etched to remove the silicon dioxide film and edge PN junction generated during the diffusion process, and the etched cell is inserted back into the quartz boat and sent to the low voltage Diffusion furnace
[0047] In the second step, after the furnace door is closed, raise the temperature from the furnace mouth to the furnace end to 700°C, the heating time is 800s, and at the same time, 3000sccm of nitrogen has been introduced, and the pressure is maintained at 900mbar;
[0048] The third step, the main pumping step time is 400s, the temperature is maintained at 700℃, and the pressure in the furnace tube is pumped to 90mbar;
[0049] The fourth step, the leak detection step time is maintained for 200s, the temperature is still maintained at 700 ℃, and the pressure is restored to 900 mbar to ensure good sealing of the low pressure furnace tube;
[0050] In the fifth step, the evacuation step time is maintained at 400s, t...
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