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Low-pressure oxidation technology for solar cell

A technology of solar cell sheet and oxidation process, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of PN junction junction depth becoming shallower and lower cost, and high-efficiency photoelectric conversion of batteries, so as to improve photoelectric conversion efficiency and lifespan. Effect of increasing short-circuit current and open-circuit voltage

Active Publication Date: 2018-02-09
HENGDIAN GRP DMEGC MAGNETICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the traditional atmospheric pressure diffusion process of solar cells can no longer meet the technical route of the PN junction's shallower junction depth, low-cost development, and high-efficiency photoelectric conversion of cells.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] The first step, the diffused polycrystalline cell is wet etched to remove the silicon dioxide film and edge PN junction generated during the diffusion process, and the etched cell is inserted back into the quartz boat and sent to the low voltage Diffusion furnace

[0027] The second step, after the furnace door is closed, raise the temperature from the furnace mouth to the furnace end to 650°C, the heating time is 500s, and at the same time, 3000sccm of nitrogen has been injected, and the pressure is maintained at 1030mbar;

[0028] The third step, the main pumping step time is 400s, the temperature is maintained at 650℃, and the pressure in the furnace tube is pumped to 100mbar;

[0029] The fourth step, the leak detection step time is maintained for 100s, the temperature is still maintained at 650℃, and the pressure is restored to 1030mbar to ensure good sealing of the low pressure furnace tube;

[0030] In the fifth step, the evacuation step time is maintained at 200s, the p...

Embodiment 2

[0036] The first step, the diffused polycrystalline cell is wet etched to remove the silicon dioxide film and edge PN junction generated during the diffusion process, and the etched cell is inserted back into the quartz boat and sent to the low voltage Diffusion furnace

[0037] In the second step, after the furnace door is closed, the temperature from the furnace mouth to the furnace end is raised to 780℃, the heating time is 1000s, and at the same time 3000sccm of nitrogen is continuously injected, and the pressure is maintained at 1100mbar;

[0038] The third step, the main pumping step time is 400s, the temperature is maintained at 780℃, and the pressure in the furnace tube is pumped to 110mbar;

[0039] The fourth step, the leak detection step time is maintained for 300s, the temperature is still maintained at 780℃, and the pressure is restored to 1100mbar to ensure good sealing of the low pressure furnace tube;

[0040] The fifth step, the evacuation step time is maintained at 6...

Embodiment 3

[0046] The first step, the diffused polycrystalline cell is wet etched to remove the silicon dioxide film and edge PN junction generated during the diffusion process, and the etched cell is inserted back into the quartz boat and sent to the low voltage Diffusion furnace

[0047] In the second step, after the furnace door is closed, raise the temperature from the furnace mouth to the furnace end to 700°C, the heating time is 800s, and at the same time, 3000sccm of nitrogen has been introduced, and the pressure is maintained at 900mbar;

[0048] The third step, the main pumping step time is 400s, the temperature is maintained at 700℃, and the pressure in the furnace tube is pumped to 90mbar;

[0049] The fourth step, the leak detection step time is maintained for 200s, the temperature is still maintained at 700 ℃, and the pressure is restored to 900 mbar to ensure good sealing of the low pressure furnace tube;

[0050] In the fifth step, the evacuation step time is maintained at 400s, t...

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PUM

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Abstract

The invention discloses a low-pressure oxidation technology for a solar cell, and the technology mainly comprises the steps: preprocessing, reaction preparation, oxidation reaction, cooling and annealing, and boat withdrawing. A silicon dioxide film generated through the technology in a low-pressure environment where the temperature is less than 800 DEG C prolongs the service life of a few of carriers, and finally increases a short-circuit current and an open-circuit voltage of the cell, thereby improving the photoelectric conversion efficiency. A low-pressure diffusion furnace, compared witha normal pressure diffusion furnace, is small in pressure intensity, and is stable in air flow, thereby enabling the structure of the generated silicon dioxide film to be more compact and uniform. Theprepared silicon dioxide film is better in PID resistance.

Description

Technical field [0001] The invention relates to the field of solar polycrystalline cells, in particular to a low-pressure oxidation process of solar cells. Background technique [0002] The surface passivation of silicon solar cells is an extremely important process in the production process of solar cells. Although silicon nitride film has good anti-reflection and surface passivation effects at the same time, its stability is poor. Therefore, the deposition of silicon nitride film Previously, a silicon dioxide film was formed through a thermal oxidation process to improve stability. Thermal oxidation on the surface of the silicon wafer generates a layer of silicon dioxide film to passivate the front surface of the solar cell. Commonly used thermal oxidation methods include: dry oxygen oxidation, wet oxygen oxidation and water vapor oxidation, for example, in the Chinese patent Disclosed is a solar cell surface passivation layer structure, its application publication number is C...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/1868Y02E10/50Y02P70/50
Inventor 赵颖郭望东贾松燕任永伟董方
Owner HENGDIAN GRP DMEGC MAGNETICS CO LTD
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