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Preparation method and application of low-dielectric loss piezoelectric ceramic materials

A piezoelectric ceramic and low-dielectric technology, applied in the direction of piezoelectric/electrostrictive/magnetostrictive devices, circuits, electrical components, etc., can solve problems such as insufficient mechanical strength, piezoelectric performance attenuation, nonlinearity, etc., to achieve The effect of low dielectric loss, improved performance and good application prospects

Inactive Publication Date: 2018-03-16
SUZHOU KEMAO ELECTRONICS MATERIALS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Piezoelectric ceramic materials used in high-power applications often have problems such as severe heat generation, nonlinearity, piezoelectric performance attenuation, and insufficient mechanical strength.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] (1) Mix 50 parts of silicon nitride, 25 parts of alumina, and 10 parts of molybdenum disulfide, put them into a ball mill and mill them for 3 hours at a speed of 220 r / min to obtain a ball mill mixture;

[0021] (2) Put the ball mill mixture in ethylene glycol, then add 12 parts of bisphenol A epoxy resin, 8 parts of strontium zirconate, and 3 parts of polyether propylene oxide, heat to 150 °C while stirring, and keep for 30 min , to obtain heat reaction mixture;

[0022] (3) Aging the thermal reaction mixture at room temperature for 12 h, adjusting the pH to 8.0 with 3 mol / L sodium hydroxide solution, and then drying at 80 °C for 8 h to obtain a ceramic slurry;

[0023] (4) Add the ceramic slurry into the mold for 60 minutes of solidification treatment at 250°C and 15MPa, and then demould to obtain the billet, and then send the billet into the sintering furnace for pre-sintering, the pre-sintering temperature is 950°C, and pre-sintering The time is 1.5 h, and then the...

Embodiment 2

[0026] (1) Mix 55 parts of silicon nitride, 30 parts of alumina, and 15 parts of molybdenum disulfide, put them into a ball mill and mill them for 3 h at a speed of 235 r / min to obtain a ball mill mixture;

[0027] (2) Put the ball mill mixture in ethylene glycol, then add 15 parts of bisphenol A epoxy resin, 10 parts of strontium zirconate, and 4 parts of polyether propylene oxide, heat to 150 °C while stirring, and keep for 30 min , to obtain heat reaction mixture;

[0028] (3) Aging the thermal reaction mixture at room temperature for 12 h, adjusting the pH to 8.0 with 3 mol / L sodium hydroxide solution, and then drying at 80 °C for 8 h to obtain a ceramic slurry;

[0029] (4) Add the ceramic slurry into the mold for 70 minutes of solidification treatment at 250°C and 15MPa, and then demould to obtain the billet, and then send the billet to the sintering furnace for pre-sintering, the pre-sintering temperature is 950°C, pre-sintering The time is 1.5 h, and then the pre-fire...

Embodiment 3

[0032] (1) Mix 60 parts of silicon nitride, 35 parts of alumina, and 20 parts of molybdenum disulfide, put them into a ball mill and mill them for 3 hours at a speed of 220-250 r / min to obtain a ball mill mixture;

[0033] (2) Put the ball mill mixture in ethylene glycol, then add 18 parts of bisphenol A epoxy resin, 12 parts of strontium zirconate, and 5 parts of polyether propylene oxide, heat to 150 ° C while stirring, and keep for 30 min , to obtain heat reaction mixture;

[0034] (3) Aging the thermal reaction mixture at room temperature for 12 h, adjusting the pH to 8.0 with 3 mol / L sodium hydroxide solution, and then drying at 80 °C for 8 h to obtain a ceramic slurry;

[0035] (4) Add the ceramic slurry into the mold and perform curing treatment at 250°C and 15MPa for 80 minutes, then demould to obtain the billet, and then send the billet into the sintering furnace for pre-sintering at 950°C, pre-sintering The time is 1.5 h, and then the pre-fired blank is sintered at ...

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PUM

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Abstract

The invention discloses a preparation method and an application of low-dielectric loss piezoelectric ceramic materials. The method includes the steps: mixing silicon nitride, aluminum oxide and molybdenum disulfide, ball-milling mixture and placing the ball-milled mixture into ethylene glycol; adding bisphenol-A epoxy resin, strontium zirconate and polyether propylene oxide, and stirring and heating mixture to obtain thermal reaction mixed liquid; ageing the thermal reaction mixed liquid, adjusting pH (potential of hydrogen) of the mixed liquid, and drying the mixed liquid to obtain ceramic slurry; performing curing and demolding on the ceramic slurry in molds to obtain blanks; sintering the blanks to obtain the low-dielectric loss piezoelectric ceramic materials. The prepared low-dielectric loss piezoelectric ceramic materials are high in mechanical quality factor and electromechanical coupling coefficient and low in dielectric loss and have good application prospects in electronic device products.

Description

technical field [0001] The invention relates to the technical field of electronic materials, in particular to a preparation method and application of a piezoelectric ceramic material with low dielectric loss. Background technique [0002] Since J. Curie and P. Curie discovered the piezoelectric effect in 1880, piezoelectricity has become an important field of modern science and technology. So far, piezoelectric ceramic materials have become indispensable and important functional materials in various technical fields, and have developed into an emerging high-tech industry. At present, countries all over the world attach great importance to the research and development of piezoelectric ceramic materials. The focus of research is to discover new effects from known materials and develop new applications. At the same time, start from controlling the organization and structure of materials to find new piezoelectric materials. [0003] Due to the expansion of the application range...

Claims

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Application Information

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IPC IPC(8): C04B35/584H01L41/187
CPCC04B35/584C04B2235/3201C04B2235/3217C04B2235/3248C04B2235/446C04B2235/96H10N30/853
Inventor 邹黎清
Owner SUZHOU KEMAO ELECTRONICS MATERIALS TECH
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