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New application of zinc borate monocrystalline as substrate of semiconductor thin film

A zinc borate and semiconductor technology, applied in the field of materials, can solve the problems of no relevant reports, etc., and achieve the effect of excellent performance and cost reduction

Inactive Publication Date: 2018-03-23
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] There is still no relevant report on the use of zinc borate single crystal as a semiconductor thin film substrate

Method used

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  • New application of zinc borate monocrystalline as substrate of semiconductor thin film
  • New application of zinc borate monocrystalline as substrate of semiconductor thin film
  • New application of zinc borate monocrystalline as substrate of semiconductor thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] A method for preparing a semiconductor thin film substrate, comprising the steps of:

[0046] (1) Weigh ZnO and B according to the stoichiometric ratio of boron and zinc in zinc borate 2 o 3 , combining ZnO and B 2 o 3 Mix and grind, then put the obtained sample into a crucible, place it in a muffle furnace, raise the temperature to 800°C at a rate of 2°C / min, keep it warm for 72h, and obtain zinc borate powder; wherein, during the process of raising the temperature to 800°C, The samples were taken out for grinding at 300°C, 500°C and 700°C respectively; the samples were taken out for grinding every 24h during the 72h incubation;

[0047] (2) Put the zinc borate powder into a platinum crucible, place it in a crystal growth furnace, raise the temperature to 1020°C at a rate of 5°C / min, keep it warm for 12 hours to obtain a uniform melt, and then cool it down to 982°C at a rate of 5°C / min ; Put the seed crystal into the melt, keep the rotation speed at 10r / min, and th...

Embodiment 2

[0051] Adopting the thickness that the preparation method described in embodiment 1 obtains is 5mm, and length is 5mm, and the semiconductor thin film substrate of width 5mm is, adopts electrochemical deposition, chemical vapor deposition, thermal evaporation deposition, laser pulse on this semiconductor thin film substrate GaN thin films are prepared by deposition, electron beam evaporation, AC / DC sputtering or molecular beam epitaxy.

[0052] After testing, compared with the thin film obtained by using silicon carbide or sapphire as the substrate, the GaN thin film has the following characteristics:

[0053] Compared with silicon carbide semiconductor as a substrate, the light transmission band of silicon carbide semiconductor does not completely cover the visible light band, while zinc borate is a wide bandgap insulator, and the light transmission range covers the entire visible light band, which can be applied to special light-emitting devices.

[0054] Compared with the s...

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Abstract

The invention provides new application of zinc borate monocrystalline as a substrate of a semiconductor thin film. The zinc borate monocrystalline belongs to a cubic crystal system, and is of an I-43mspace group structure, and the unit cell parameter is shown in the description; a chemical formula is Zn4B6O13; the zinc borate monocrystalline is used for preparing the substrate of the semiconductor thin film. The new application has the advantages that when the zinc borate monocrystalline is used as the substrate, the semiconductor thin film with excellent property can be obtained, and the corresponding cost is greatly reduced.

Description

technical field [0001] The invention belongs to the technical field of materials, and relates to a use of a zinc borate single crystal, in particular to a new use of a zinc borate single crystal as a semiconductor film substrate. Background technique [0002] Semiconductor thin-film substrate materials are important materials in semiconductor light-emitting technology. They have high requirements for the crystal matching degree, light transmission performance, and thermodynamic properties of materials and thin-film materials. At present, sapphire and silicon carbide are the most commonly used. These materials have the advantages of high stability and high mechanical strength. [0003] Zinc borate is an environmentally friendly non-halogen flame retardant, which has the characteristics of non-toxicity, low water solubility, high thermal stability, small particle size, small specific gravity, and good dispersibility. It is widely used as a high-efficiency flame retardant in pl...

Claims

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Application Information

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IPC IPC(8): C30B29/10H01L27/12
CPCC30B29/10H01L27/12
Inventor 林哲帅姜兴兴吴以成
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI