Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Multi-wavelength GaN-based asymmetric quantum well surface emitting laser and manufacturing method thereof

A technology for emitting lasers and quantum wells, which is applied in the direction of lasers, phonon exciters, and laser components, etc., can solve the problems of lack of controllability of laser wavelengths, and achieve commercialization and practicality, low production costs, and threshold value low effect

Inactive Publication Date: 2018-04-06
EAST CHINA NORMAL UNIV
View PDF7 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, a big limitation of this method is that it lacks controllability to the output laser wavelength, that is, the obtained multiple laser wavelengths are randomly distributed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multi-wavelength GaN-based asymmetric quantum well surface emitting laser and manufacturing method thereof
  • Multi-wavelength GaN-based asymmetric quantum well surface emitting laser and manufacturing method thereof
  • Multi-wavelength GaN-based asymmetric quantum well surface emitting laser and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] Embodiment 1: Design method of asymmetric quantum well active region.

[0054] (1) For example, to prepare a laser with a wavelength of λ 1 and lambda 2 The dual-wavelength GaN-based asymmetric quantum well surface-emitting laser, then we can obtain the above two cavity modes (λ 1 , lambda 2 ) device structure, such as figure 1 shown. where the cavity mode λ 1 and the cavity mode λ 2 Corresponding to two wavelengths of 519 nanometers and 543 nanometers respectively, which are obtained under the condition that the laser cavity length is set to 2 microns, we can adjust the position of the cavity mode by changing the cavity length. Software such as TFCalc can be used for the simulation design of the cavity length and cavity mode of the laser.

[0055] (2) Set the cavity length and cavity mode (λ 1 , lambda 2 ), the next step is to set the spatial position of the asymmetric quantum well in the resonant cavity. like figure 2 As shown, first use TFCalc software t...

Embodiment 2

[0057] Embodiment 2: Device preparation process flow.

[0058] (1) if image 3 As shown, a GaN-based epitaxial wafer 32 with the asymmetric quantum well active region is grown on a sapphire substrate 31 by MOCVD, including a GaN low-temperature buffer layer (30 nanometers), an undoped GaN layer (2 micrometers) , Si-doped n-type GaN layer (2 microns), InGaN / GaN asymmetric quantum well active region (GaN barrier is 10 nanometers, InGaN wells are 2 nanometers and 5 nanometers respectively, a total of two groups), Mg-doped AlGaN layer (200nm) and Mg-doped p-type GaN layer (500nm), etc., and perform high-temperature annealing after the epitaxial wafer growth is completed to increase the hole concentration.

[0059] (2) if Figure 4 , performing photolithography on the GaN-based epitaxial wafer, and then using magnetron sputtering or electron beam evaporation to grow a distributed Bragg reflector, and then obtain a patterned distributed Bragg reflector 41 by a stripping method; th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Surface roughnessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a multi-wavelength GaN-based asymmetric quantum well surface emitting laser and a manufacturing method thereof, which relate to the field of semiconductor lasers. asymmetric quantum wells are adopted as active regions to realize multi-wavelength output of the laser, and two and more than two laser wavelengths are included. The device manufacturing process comprises nonplanar metal bonding, laser lift-off, cavity length control, graphic distributed Bragg reflector making and the like. The multi-wavelength surface emitting laser has a great application potential and can be applied to multiple fields such as space precise distance measurement, a Terahertz signal generator, photomixing, laser spectroscopy, medical examination, augmented reality (AR) and three-dimensional imaging. The multi-wavelength GaN-based asymmetric quantum well surface emitting laser and the manufacturing method thereof have the advantages that a two-dimensional array structure of the device can be realized easily, large-scale industrial production is facilitated, and commercialization and practicality of the device are facilitated.

Description

technical field [0001] The invention belongs to the field of semiconductor lasers, in particular to a novel multi-wavelength GaN-based asymmetric quantum well surface-emitting laser and a preparation method thereof. Background technique [0002] GaN-based materials include GaN, InN, AlN and their ternary or quaternary alloys. They are all direct bandgap semiconductor materials and have high radiative recombination efficiency, and are the third generation semiconductor materials. By adjusting the alloy ratio of GaN-based materials, its forbidden band width can be continuously changed from deep ultraviolet to visible light and then to near infrared. At the same time, GaN materials have stable mechanical and chemical properties, so light-emitting devices based on GaN-based materials have broad application prospects in solid-state lighting, full-color display, high-density optical storage, high-speed laser printing, and communications. [0003] GaN substrate emitting laser is ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01S5/34H01S5/187
CPCH01S5/187H01S5/3408H01S5/3425
Inventor 翁国恩陈少强胡小波
Owner EAST CHINA NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com