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Hydrogenated titanium dioxide nanorod array/silicon heterojunction broadband optical detector and preparation method thereof

A technology of hydrogenated titanium dioxide and nanorod arrays, which is applied in nanotechnology, nanotechnology, nanotechnology and other directions for materials and surface science, can solve problems such as short response recovery time, achieve easy integration, important application value, suitable for The effect of mass production

Inactive Publication Date: 2018-04-13
CHINA UNIV OF PETROLEUM (EAST CHINA)
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Problems solved by technology

In addition, the response recovery time of the heterojunction is very short (50 ms)

Method used

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  • Hydrogenated titanium dioxide nanorod array/silicon heterojunction broadband optical detector and preparation method thereof
  • Hydrogenated titanium dioxide nanorod array/silicon heterojunction broadband optical detector and preparation method thereof
  • Hydrogenated titanium dioxide nanorod array/silicon heterojunction broadband optical detector and preparation method thereof

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Embodiment 1

[0026] We selected an n-type monocrystalline silicon wafer with a thickness of 0.5 mm as the substrate, and retained its natural oxide layer. Clean the silicon wafer in ultrasonic wave with deionized water for 15 minutes, then clean the silicon wafer in ultrasonic wave with acetone for 20 minutes, and finally clean the silicon wafer with absolute ethanol for 20 minutes. After drying, repeat the above cleaning process again.

[0027] Dry the cleaned n-type silicon substrate and place it in a spin-coating chamber. Spin-coat the titanium dioxide seed layer under the background of continuously flowing nitrogen gas. Put the titanium dioxide film / silicon prepared by the spin coating method into a tubular resistance furnace for annealing in a nitrogen atmosphere at a temperature of 800 degrees Celsius, with a heating rate of 4 degrees Celsius per minute, and keep at 800 degrees Celsius for 2 hours to obtain a titanium dioxide porous film / silicon. Put the titanium dioxide porous fi...

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Abstract

The invention specifically provides an n-n homotype heterojunction high-performance broadband optical detector formed based on a hydrogenated titanium dioxide nanorod array and an n type silicon substrate. Firstly, a titanium dioxide porous thin film is grown on the n type silicon substrate by a spin coating method; next, a seed layer is induced to generate a titanium dioxide nanorod array througha hydrothermal method; the titanium dioxide nanorod array is subjected to hydrogenation treatment to obtain the hydrogenated titanium dioxide nanorod array; and finally, a light-transmitting metal layer electrode thin film is prepared through a magnetron sputtering method. The broadband optical detector prepared based on the interface effect of the hydrogenated titanium dioxide nanorod array / silicon heterojunction has the characteristics of simple process, low cost, no need of a heater, operation at the room temperature, low energy consumption, high sensitivity and short response and recoverytime; and in addition, the broadband optical detector has high detection performance on both of ultraviolet light and infrared light, so that the broadband optical detector has important applicationprospect.

Description

technical field [0001] The invention belongs to the field of broadband photodetectors, in particular to a broadband photodetector based on hydrogenated titanium dioxide nanorod array / silicon heterojunction and a preparation method thereof. Background technique [0002] A broadband photodetector is an electronic device that can convert a wide range of optical signals with different wavelengths into electrical signals. It can realize ultra-broadband light detection from ultraviolet to infrared with one detector, and reach the detection bandwidth that can only be achieved by multiple detectors working at the same time. It is widely used in many important fields such as infrared imaging, remote sensing, environmental detection, astronomical detection, and spectral analysis. Broadband detection material is an important factor to determine the performance and price of broadband detection devices. The development of ultra-high photoresponse and low-cost new broadband photodetecti...

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/0352H01L31/109H01L31/18B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01L31/032H01L31/035227H01L31/109H01L31/18Y02P70/50
Inventor 凌翠翠郭天超薛庆忠赵琳侯志栋
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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