Surface-modified manganese dioxide product loaded by N-doped hollow carbon sphere, preparation method of surface-modified manganese dioxide product loaded by N-doped hollow carbon sphere, and application of surface-modified manganese dioxide product loaded by N-doped hollow carbon sphere

A technology of nitrogen-doped carbon and surface modification, applied in the manufacture of hybrid/electric double layer capacitors, hybrid capacitor electrodes, etc., can solve the problems of capacity limitation, poor conductivity, limited surface area of ​​polyaniline, etc., and achieve high specific capacitance , excellent capacitive characteristics, wide application prospects

Inactive Publication Date: 2018-04-20
HUNAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the conductivity of this type of organic polymer itself is not very good, and the surface area of ​​polyaniline itself is also limited, and its ability to support manganese dioxide particles is also limited.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] (1) Preparation of carbon hollow spheres (HCS)

[0023] According to the prior art (Zang Jun, Qian Hang, Zeng Erman, Fu Juanni, Zheng Mingsen, Dong Quanfeng, Preparation and Electrochemical Properties of Carbon Hollow Sphere / Sulfur Composite Materials, Electrochemistry, 2013, 19(3):195-198 ) to prepare HCS: Dissolve 2.5 g resorcinol in a certain amount of pure water, stir well to form a uniform solution; then add formaldehyde solution at a molar ratio of 1:2, stir well, then add 140 mL PMMA emulsion, stir well After sealing, turn the material into 85 O C oven at constant temperature for 3 days. The formed solid was taken out and placed in a tube furnace, and the temperature was raised to 800 °C under the protection of nitrogen O C, constant temperature for 1 h to obtain carbon hollow sphere material (HCS).

[0024] (2) Preparation of polydopamine-modified carbon hollow spheres (PDA-HCS)

[0025] First, the carbon hollow sphere material (HCS) was mixed with concentr...

Embodiment 2

[0036] (1) Preparation of carbon hollow spheres (HCS)

[0037] Same as step (1) of Example 1.

[0038] (2) Preparation of polydopamine-modified carbon hollow spheres (PDA-HCS)

[0039] First, the carbon hollow sphere material (HCS) was mixed with concentrated sulfuric acid at room temperature, stirred for 2 hours, filtered, washed with a large amount of pure water to neutrality, and then washed at 40 O Dry at C for 24 hours to obtain acidified HCS; then 0.5 g of acidified HCS was mixed with 18 mL of dopamine (DA) in tris(hydroxymethyl)aminomethane solution with a concentration of 10% (wt%) and vigorously stirred After 24 hours, the solid was centrifuged at 60 o C for 24 h under vacuum to obtain polydopamine (PDA)-modified carbon hollow spheres (PDA-HCS).

[0040] (3) Preparation of graphene-modified nitrogen-doped carbon hollow spheres (N-HCS@Gr)

[0041] Firstly, the graphene oxide (GO) particles and pure water were mixed to make a concentration of 1 mg mL under vigorous ...

Embodiment 3

[0050] (1) Preparation of carbon hollow spheres (HCS)

[0051] Same as step (1) of Example 1.

[0052] (2) Preparation of polydopamine-modified carbon hollow spheres (PDA-HCS)

[0053] First, the carbon hollow sphere material (HCS) was mixed with concentrated sulfuric acid at room temperature, stirred for 2 hours, filtered, washed with a large amount of pure water to neutrality, and then washed at 40 O Dry at C for 24 hours to obtain acidified HCS; then 0.5 g of acidified HCS was mixed with 30 mL of dopamine (DA) in tris(hydroxymethyl)aminomethane solution with a concentration of 10% (wt%) and vigorously stirred After 24 hours, the solid was centrifuged at 60 o C for 24 h under vacuum to obtain polydopamine (PDA)-modified carbon hollow spheres (PDA-HCS).

[0054] (3) Preparation of graphene-modified nitrogen-doped carbon hollow spheres (N-HCS@Gr)

[0055] Firstly, the graphene oxide (GO) particles and pure water were mixed to make a concentration of 2.0 mg mL under vigorou...

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PUM

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Abstract

The present invention discloses a preparation method of a surface-modified manganese dioxide (MnO2) product loaded by an N-doped hollow carbon sphere (N-HCS). The method comprises the following stepsof: (1) preparing a hollow carbon sphere (HCS); (2) preparing a polydopamine-modified hollow carbon sphere (PDA-HCS); (3) preparing a graphene-modified N-doped hollow carbon sphere (N-HCS@Gr); (4) preparing a polyaniline-modified N-HCS@Gr (N-HCS@Gr@PANI); and (5) preparing a surface-modified MnO2 product loaded by an N-doped hollow carbon sphere (N-HCS@Gr@PANI@MnO2). The N-HCS@Gr@PANI@MnO2 productfully combines excellent performances of the N-doped hollow carbon sphere, a large superficial area and an excellent conductivity of graphene, reductibility and conductivity of the PANI and excellentcapacitance characteristics of the MnO2 itself, and therefore, the N-HCS@Gr@PANI@MnO2 product expresses very high specific capacitance and is electrode material of a super electrochemical capacitor with a wide application prospect.

Description

technical field [0001] The invention belongs to the technical field of novel electrochemical energy and its materials, and specifically relates to a surface-modified nitrogen-doped carbon hollow sphere loaded manganese dioxide product and its application. Background technique [0002] Since manganese dioxide was found to have excellent electrochemical capacitive properties in 1999, it has been extensively studied as an electrode material for electrochemical capacitors, because manganese dioxide has high electrochemical activity, low cost, easy preparation, and low toxicity. features. Then, manganese dioxide itself has poor electrical conductivity, resulting in high resistance to charge transfer, so the specific capacitance and power characteristics of manganese dioxide are severely limited. In general, combining materials with excellent electrical conductivity with manganese dioxide is an effective way to solve its inherent poor electrical conductivity and ultimately improv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G11/32H01G11/46H01G11/24H01G11/26H01G11/86
CPCY02E60/13H01G11/32H01G11/24H01G11/26H01G11/46H01G11/86
Inventor 易清风李广余亮
Owner HUNAN UNIV OF SCI & TECH
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