NO2 chemical resistance type gas sensor and preparation method thereof

A gas sensor and resistive technology, applied in the field of NO2 chemical resistive gas sensor and its preparation, can solve the problems of poor response, slow response, low sensitivity, etc., and achieve high response sensitivity, fast response and recovery speed, and improved sensitivity. Effect

Active Publication Date: 2018-05-04
SUZHOU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the current NO based on organic semiconductor thin film 2 The gas sensor has the disadvantages of low sensitivity, slow response and poor recovery. The purpose of the present invention is to provide a NO 2 Chemiresistive gas sensor and preparation method thereof, in order to improve gas sensor to NO 2 Excellent responsiveness, fast response, high response sensitivity, and the lowest detection limit can reach ppb level

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  • NO2 chemical resistance type gas sensor and preparation method thereof
  • NO2 chemical resistance type gas sensor and preparation method thereof
  • NO2 chemical resistance type gas sensor and preparation method thereof

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Embodiment 1

[0039] figure 1 Is the present invention NO 2 Schematic diagram of the structure of a chemical resistive gas sensor, including a substrate 1, an insulating layer 2, a surface modification layer 3, an active sensitive layer 4, and a source-drain electrode 5 arranged in sequence from bottom to top. The material of the insulating layer 2 is silicon oxide, and the surface modification layer The material of layer 3 is an amino-terminated silane compound, and the molecular formula of the amino-terminated silane compound is H 2 N-(CH 2 )3 -Si(OCH 3 ) 3 , the material of the active sensitive layer 4 is TIPS-pentacene. Its preparation method is as follows:

[0040] Select a heavily doped n-type silicon wafer as the substrate 1, which contains 300nm thermally oxidized silicon dioxide (insulating layer 2), and sonicate the substrate 1 in acetone, ethanol, and ultrapure water for ten minutes each to remove surface impurities , and then placed in the volume ratio = 3:7 H 2 o 2 and ...

Embodiment 2

[0044] This example provides a NO 2 Schematic diagram of the structure of a chemical resistive gas sensor, including a substrate 1, an insulating layer 2, a surface modification layer 3, an active sensitive layer 4, and a source-drain electrode 5 arranged in sequence from bottom to top. The material of the insulating layer 2 is silicon oxide, and the surface modification layer The material of layer 3 is an amino-terminated silane compound, and the molecular formula of the amino-terminated silane compound is H 2 N-(CH 2 ) 8 -Si(OCH 3 ) 3 , the active sensitive layer 4 is made of rubrene. Its preparation method is as follows:

[0045] Select a heavily doped n-type silicon wafer as the substrate 1, which contains 300nm thermally oxidized silicon dioxide (insulating layer 2), and sonicate the substrate 1 in acetone, ethanol, and ultrapure water for ten minutes each to remove surface impurities , and then placed in the volume ratio = 3:7 H 2 o 2 and H 2 SO 4 Boil in the m...

Embodiment 3

[0048] This example provides a NO 2 Schematic diagram of the structure of a chemical resistive gas sensor, including a substrate 1, an insulating layer 2, a surface modification layer 3, an active sensitive layer 4, and a source-drain electrode 5 arranged in sequence from bottom to top. The material of the insulating layer 2 is silicon oxide, and the surface modification layer The material of layer 3 is an amino-terminated silane compound, and the molecular formula of the amino-terminated silane compound is H 2 N-(CH 2 ) 3 -Si(OCH 2 CH 3 ) 3 , namely H 2 N-(CH 2 ) 3 -Si(OC 2 h 5 ) 3 , the active sensitive layer 4 is made of vanadyl phthalocyanine. Its preparation method is as follows:

[0049] Select a heavily doped n-type silicon wafer as the substrate 1, which contains 300nm thermally oxidized silicon dioxide (insulating layer 2), and sonicate the substrate 1 in acetone, ethanol, and ultrapure water for ten minutes each to remove surface impurities , and then pl...

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Abstract

The invention relates to an NO2 chemical resistance type gas sensor which comprises a substrate, an insulating layer, a surface modification layer, an active sensitive layer and source and drain electrodes arranged from bottom to top in sequence. The surface modification layer is made of an amino-terminated silane compound; a molecular formula of the amino-terminated silane compound is H2N-(CH2)n-SiCl3, H2N-(CH2)n-Si(OCH3)3 or H2N-(CH2)n-Si(OC2H5)3, wherein n is equal to 3-18; and the active sensitive layer is made of an organic semiconductor. The invention further provides a preparation method of the NO2 chemical resistance type gas sensor. The preparation method comprises the following steps: forming a flat insulating layer on the surface of the substrate, and self-assembling the amino-terminated silane compound on the surface of the insulating layer so as to form the surface modification layer; depositing the active sensitive layer on the surface modification layer; and depositing the source and drain electrodes on the active sensitive layer, thereby obtaining the NO2 chemical resistance type gas sensor. The gas sensor disclosed by the invention has the characteristics of rapidresponse and rapid restoration of NO2, the response sensitivity is extremely high, and the lowest detection limit can reach a ppb level.

Description

technical field [0001] The invention relates to the field of gas sensors, in particular to a NO 2 Chemiresistive gas sensor and preparation method thereof. Background technique [0002] Nitrogen dioxide (NO 2 ) is one of the important sources of air pollution, the human body exhales NO 2 It will generate nitric acid and nitrous acid, stimulate the respiratory organs, cause chronic and acute poisoning, reduce the blood pressure of the human body, and cause blood hypoxia, and even more serious cases can threaten life; NO 2 It is also one of the main factors leading to the formation of acid rain. It settles to the surface of the ground in the form of rain, snow or fog and flows into rivers and oceans, making the algae in the water body eutrophic, leading to the death of various fish and aquatic organisms, and affecting the ecological environment and environment. Economic development has caused enormous damage. Therefore high performance NO 2 Sensors have become an importan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
CPCG01N27/125
Inventor 迟力峰黄丽珍王滋朱晓飞
Owner SUZHOU UNIV
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