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An Application of Selective Laser Sintering Using Polyetheretherketone as Raw Material

A technology of polyether ether ketone and laser sintering, which is applied in the direction of additive processing, etc., can solve the problems of rough surface, wide particle size distribution, and less spherical particles, and achieve the effect of high powder fluidity and convenient subsequent processing.

Active Publication Date: 2021-06-22
JIANGHAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem of relatively few spherical particles, rough surface and wide particle size distribution of composite materials in the prior art, the embodiment of the present invention provides an application of selective laser sintering using polyether ether ketone as raw material

Method used

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  • An Application of Selective Laser Sintering Using Polyetheretherketone as Raw Material
  • An Application of Selective Laser Sintering Using Polyetheretherketone as Raw Material
  • An Application of Selective Laser Sintering Using Polyetheretherketone as Raw Material

Examples

Experimental program
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Embodiment 1

[0033] Under nitrogen protection, 10.90 g of 4,4'-difluorobenzophenone was added to a solvent of 1-butyl-3-methylimidazolic bromorine salt to give 4,4'-difluorobenzophenone. Solution, wherein the structure of 1-butyl-3-methylimidazolium bromide is The 4,4'-difluoroblovenate solution was warmed to 40 ° C, while stirring 4,4'-difluorobenzophenone solution to completely dissolve 4,4'-difluorobenzodone, cooled to Alternative to standing; under nitrogen protection, 5.50 g of 1,4-benzene and 0.69 g of potassium anhydrous carbonate and 4.77 g of anhydrous sodium carbonate are mixed and divided into four parts of the mass equal, and the 4,4'-two is added separately. In the fluorophenyl ketophenone solution, the high-speed stirring (the stirring speed can be 100 to 500 rpm), the interval of adjacent two additions is 30 min, from normal temperature to 140 ° C, and the temperature rise rate is 5 ° C / min, Insulation 2 h, allowing 4,4'-difluorobenzophenone, potassium anhydrous carbonate and...

Embodiment 2

[0040] Under argon, 218.00 g of 3,3'-difluorobenzophenone was added to a solvent of 1,3-di (2-methoxy-2-oxyethyl) imidazole, resulting in 4 , 4'-difluorobenzophenone solution, wherein the structure of 1,3-di (2-methoxy-2-oxyethyl) imidazole is: The 4,4'-difluoroblofluorophenone solution was raised to 25 ° C, and the mixture was stirred at 4,4'-difluorobenzophenone solution to completely dissolve 4,4'-difluorobenzodone, cooled to Alternative to standing; under argon protection, 22.83 g of bisphenol A and 1.38 g of anhydrous potassium carbonate and 9.64 g of anhydrous sodium anhydrous sodium carbonate were separated into four parts of mass equal, and 3,3'-difluoro is added separately. In the benzophenone solution, the high-speed stirring (the stirring speed can be 100 ~ 500 rpm), the interval of adjacent two additions is 20 min, from normal temperature to 120 ° C, the temperature rise rate is 10 ° C / min, heat insulation 1h Make 4,4'-difluorobenzophenone, potassium anhydrous carbo...

Embodiment 3

[0045] Under argon, 10.90 g of 4,4'-difluorobenzodone was added to a solvent of 327.00 g of 1,3-d (2-methoxy-2-oxyethyl) imidazoliazolite, A solution of 4,4'-difluorobenzophenone has been obtained, wherein the structure of 1,3-di (2-methoxy-2-oxyethyl) imidazole hexafluorophosphate is: The 4,4'-difluorobenzophenone solution was raised to 60 ° C, and the mixture was stirred at 4,4'-difluorobenzophenone solution to cool until normal temperature, under argon, will 16.02 g of 2,6-dihydroxaphthalene and 0.35 g of anhydrous anhydrous carbonate and 4.39 g of anhydrous sodium anhydrous sodium carbonate were partially formed into five parts of mass equal, and 4,4'-difluorobenzophenone solutions were added, respectively. Continuous high-speed stirring (the stirring speed can be 100 ~ 500 rpm), the interval between adjacent two additions is 40min, from normal temperature to 120 ° C, the temperature rise rate is 20 ° C / min, heat insulation 3h, so that 4, 4 ' - Difluorobenzophenone, potassi...

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Abstract

The invention discloses an application of selective laser sintering using polyether ether ketone as a raw material, and belongs to the field of heat-resistant polymer materials. An application of selective laser sintering using polyetheretherketone as a raw material, the application of the polyetheretherketone includes: 1-butyl-3-methylimidazolium bromide, 1,3-bis(2 -methoxy-2-oxyethyl)imidazole, 1,3-bis(2-methoxy-2-oxyethyl)imidazole hexafluorophosphate, 1,3-bis(2-methoxy-2 ‑Oxyethyl) imidazole acetate and tetramethylguanidine tetrafluoroborate are used as a solvent to synthesize polyether ether ketone. When the synthesized polyetheretherketone is used as the raw material of the selective laser sintering technology, the powdered polyether ether ketone with a particle size distribution of 30-70 μm can be obtained to obtain a pure product, and the surface of the polyetheretherketone is smooth, which is similar to Spherical shape and high powder flowability make this polyether ether ketone meet the requirements of selective laser sintering technology.

Description

Technical field [0001] The present invention relates to the field of heat-resistant polymer materials, and more particularly to the application of selective laser sintering of polyether ether ketones. Background technique [0002] Selective laser sintering; SLS) can print out alternative bones, dimensional precision and shape matching degree, which are exactly consistent with the patient's physical characteristics, far exceeding the matching degree of in the past, and is subject to the attention of the medical community And promotion. According to the Frenkel sintered neck length equation, the factors affecting the sintering mass include the apparent density of the powder raw material and the particle size of the powder material. In order to ensure the quality of the selective laser sintering technology, the particle size of the raw material as a selective laser sintering technology is concentrated between 30 and 70 μm, the particle morphology is close to the spherical shape, the...

Claims

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Application Information

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IPC IPC(8): C08G65/40C08G65/46B33Y70/00B33Y70/10
CPCB33Y70/00C08G8/02Y02P10/25
Inventor 尤庆亮付华阮敏钱新华肖标何丹陈妤红邹立勇周瑞雪刘洪浩刘晶晶
Owner JIANGHAN UNIVERSITY
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