Filter circuit, heating circuit and semiconductor processing equipment

Abstract

The invention provides a filter circuit, a heating circuit and semiconductor processing equipment. The filter circuit is used for being connected between a heating source and load for filtering the load, and comprises an inductive branch and a capacitive branch which are connected in parallel; the inductor branch comprises a transformer component and an inductive component; the inductive componentis connected with two ends of a primary winding of the transformer component in series and is used for filtering the load; a secondary winding of the transformer component is used for being connectedwith the load; and the transformer component is used for transmitting a heating electric signal output from the heating source to the load. According to the filter circuit, the inductive component inthe inductive branch is connected with two ends of the primary winding of the transformer component in series and the volume of the inductive branch is greatly reduced, so that the occupied space ofthe inductive branch is correspondingly reduced and the occupied space of the whole filter circuit is greatly reduced. The number of components arranged in the inductive branch of the filter circuit is greatly reduced, so that the cost of devices of the filter circuit is reduced and the whole volume and the occupied space of the filter circuit are reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor device preparation, in particular to a filter circuit, a heating circuit and semiconductor processing equipment. Background technique [0002] In semiconductor equipment, the plasma equipment used for silicon etching process usually adopts the principle of inductively coupled plasma (ICP), and the radio frequency energy is provided by the radio frequency power supply to ionize the special gas (such as argon Ar, helium, etc.) in the high vacuum state in the chamber. Gas He, nitrogen N2, etc.), to generate a plasma containing a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals, these active particles and the wafer placed in the cavity and exposed to the plasma environment The interaction between them causes various physical and chemical reactions to occur on the surface of the wafer material, thereby changing the surface properties of the mate...

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Problems solved by technology

In order to meet the performance requirements of the device, the volume of the inductor and capacitor is usually relatively large, which increases the volume and occupied space of the entire filter circuit; and with the continuous increase of the wafer size (such as greater than or equal to 300mm, especially is 450mm), the process line width gradually decreases (such as the process below 20nm), and the number of temperature zones on the electrostatic chuck is also increasing (such as increasing from the original two zones to four zones, eight zones, District 16 or even District 32), according to figure 1 The number of inductors and capacitors also increases with the setting of the filter circuit. For example, when there are four temperature zones on the electrostatic chuck, the filter circuit increases to eight branches, and each branch includes a parallel circuit of inductors and capacitors. The cost of the filter circuit is gradually increased, and the volume and space occupied by the filter circuit are also increasing.

[0007] In addition, in the above-mentioned filter circuit, in order to meet the performance requirements of the device, the number of winding turns of the inductor is large, which can easily lead to poor consistency of the inductor winding, thereby affecting the stability of the inductor with temperature changes, and then affecting the stability of the entire filter circuit. Filter performance

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