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Czochralski-silicon substrate for inhibiting displacement irradiation damage based on oxygen precipitation, and preparation method for czochralski-silicon substrate

A technology of radiation damage and oxygen precipitation, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as circuit failure, performance degradation of electronic components, etc., to improve yield, reduce defect density, and reduce swelling. Effect

Inactive Publication Date: 2018-06-01
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Through the displacement effect, a large number of lattice atoms gain energy, overcome the displacement threshold energy, and become primary recoil atoms, and the primary recoil atoms gain kinetic energy through interaction with surrounding atoms, becoming secondary recoil atoms, and so on. Form cascade collisions, and eventually form many vacancy-gap pair defect groups, resulting in a significant decline in the performance of electronic components and even circuit failure

Method used

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  • Czochralski-silicon substrate for inhibiting displacement irradiation damage based on oxygen precipitation, and preparation method for czochralski-silicon substrate
  • Czochralski-silicon substrate for inhibiting displacement irradiation damage based on oxygen precipitation, and preparation method for czochralski-silicon substrate

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preparation example Construction

[0019] Such as figure 2 As shown, the present invention provides a method for preparing a Czochralski silicon substrate material based on oxygen precipitation to suppress displacement radiation damage, including the following steps:

[0020] a) The silicon substrate material is heated from room temperature at a rate of 30-200°C / sec to an annealing temperature of 1150-1250°C, and held for 10-100 seconds, and then cooled to 800°C at a cooling rate of 10-200°C / sec , naturally cooled to room temperature with the annealing furnace;

[0021] b) Perform two-step ordinary annealing treatment on the silicon substrate material cooled to room temperature, first at low temperature and then at high temperature, wherein the low temperature heat treatment temperature is 500-900°C, and the annealing time is 4-16 hours; the high temperature heat treatment temperature is 900-1100°C ℃, the heat treatment time is 8-32 hours.

Embodiment 1

[0023] Scrub the upper and lower surfaces of the silicon substrate material with alcohol, soak the silicon wafer with diluted hydrofluoric acid solution, take it out and dry it with nitrogen gas.

[0024] Put the silicon substrate material into a rapid heat treatment annealing furnace, and heat it from room temperature at a rate of 100°C / s to an annealing temperature of 1200°C under an argon atmosphere, and keep it for 20 seconds.

[0025] The purpose of rapid temperature rise is to excite a large number of vacancies and self-interstitial silicon atom pairs in the silicon body; in the process of holding high temperature for 20 seconds, both the vacancies and self-interstitial silicon atoms reach an equilibrium state, due to the balance of vacancies in the silicon crystal The density is higher than self-interstitial silicon atoms, so the main point defects in silicon are vacancies.

[0026] The silicon substrate material kept at high temperature is cooled from 1200°C to 800°C a...

Embodiment 2

[0029] Put the cleaned silicon substrate material into a rapid heat treatment annealing furnace, and heat it from room temperature at a rate of 30°C / s to an annealing temperature of 1150°C under an argon atmosphere, and keep it for 100 seconds. The silicon substrate material kept at high temperature is cooled from 1150°C to 800°C at a rate of 10°C / s, and then naturally cooled to room temperature with the annealing furnace. Put the silicon substrate material cooled to room temperature into a conventional annealing furnace, the low-temperature heat treatment temperature is 500°C, and the annealing time is 16 hours; the high-temperature heat treatment temperature is 900°C, and the heat treatment time is 32 hours. Finally, a thin clean area is formed on the surface of the silicon substrate material, with a thickness of less than 30 μm; the oxygen precipitation in the main body of the silicon substrate serves as the recombination center of displacement radiation-induced vacancies an...

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Abstract

The invention discloses a czochralski-silicon substrate for inhibiting a displacement irradiation damage based on oxygen precipitation, and a preparation method for the czochralski-silicon substrate.The material of the substrate comprises a clean region without oxygen precipitation, which is close to the surface, and an oxygen precipitation region below the clean region. The oxygen precipitationregion serves as a composite center of displacement irradiation induced vacancy and gap silicon, thereby effectively inhibiting the displacement irradiation damage. The method comprises the step: carrying out the quick thermal treatment and low-temperature and high-temperature annealing processing of a silicon substrate material for preparation. According to the invention, the oxygen precipitationregion serves as the composite center of displacement irradiation induced vacancy and gap silicon, thereby reducing a large amount of interstitial atoms and vacancies generated in an irradiation process, greatly reducing the defect density in a material body, preventing the gathering of the interstitial atoms and vacancies from forming an atomic cluster and cavity, and greatly reducing the expansion, hardening and non-crystallizing irradiation damages of the material. In addition, the oxygen precipitation also can effectively remove the metal foreign matters on the surface of the silicon substrate material through absorption, thereby facilitating the improvement of the finished rate of an integrated circuit.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a Czochralski silicon substrate capable of suppressing displacement radiation damage based on oxygen precipitation and a preparation method thereof. Background technique [0002] With the development of science and technology, more and more silicon-based devices are used in the irradiation environment. High-energy neutrons, γ-rays, atoms and electrons can all produce displacement damage, which is mainly caused by primary recoil atoms. Through the displacement effect, a large number of lattice atoms gain energy, overcome the displacement threshold energy, and become primary recoil atoms, and the primary recoil atoms gain kinetic energy through interaction with surrounding atoms, becoming secondary recoil atoms, and so on. Cascading collisions are formed, and many vacancy-gap pair defect groups are finally formed, resulting in a significant decline in the perfo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L21/324
CPCH01L21/324H01L29/06H01L29/0684
Inventor 杨萍董鹏余学功宋宇李沫代刚张健
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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