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Method for improving quality of polycrystalline silicon thin film obtained through low-pressure chemical vapor phase deposition

A low-pressure chemical vapor phase and polysilicon thin film technology, which is applied in the direction of gaseous chemical plating, coating, metal material coating process, etc., can solve the problems of polysilicon thin film fog point and the inability to prepare polysilicon thin film with high quality, and achieve yield and Effect of Reliability Improvement

Inactive Publication Date: 2018-06-12
上海中欣晶圆半导体科技有限公司
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Problems solved by technology

[0003] With the aging of processing equipment, the existing technology cannot prepare polysilicon films with high quality. Aiming at the problems existing in the prior art, the present invention provides a method for improving the quality of low-pressure chemical vapor deposition polysilicon films, which can solve the problem of polysilicon films under the current process conditions. Quality problems of film "fog spots"

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  • Method for improving quality of polycrystalline silicon thin film obtained through low-pressure chemical vapor phase deposition
  • Method for improving quality of polycrystalline silicon thin film obtained through low-pressure chemical vapor phase deposition
  • Method for improving quality of polycrystalline silicon thin film obtained through low-pressure chemical vapor phase deposition

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Embodiment Construction

[0019] The present invention will be further described below in conjunction with the accompanying drawings.

[0020] Polysilicon thin films are mainly deposited by low-pressure chemical vapor deposition (LPCVD). SiH is commonly used in the prior art 4 , Thermal decomposition deposition is carried out at a temperature of about 640-660°C.

[0021] SiH 4 =SiH 2 (gas)+H 2 (1)

[0022] SiH 2 +Si (solid)=2[Si (solid)-H * ] (2)

[0023] 2[Si(solid)-H * ]=2Si (solid)+H 2 (3)

[0024] In the formula, Si (solid) represents the silicon atoms deposited on the surface, H * Indicates hydrogen atoms adsorbed on the silicon surface. Wherein (1) (2) two steps are carried out very quickly; The 3rd step is that the process of chemical bonding is carried out very slowly. Therefore, the polysilicon deposition rate is mainly determined by the speed of surface bonding in step (3). That is, it is determined by the speed of the surface-controlled reaction process that the reactant "dif...

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Abstract

Along with aging of machining equipment, high-quality polycrystalline silicon thin films cannot be prepared through existing technologies. Aiming at the problems in the prior art, the invention provides a method for improving quality of a polycrystalline silicon thin film obtained through low-pressure chemical vapor phase deposition. SiH4 is adopted to be subjected to thermal decomposition deposition at the temperature of 610-630 DEG C, and the polycrystalline silicon thin film cloud point quality problem in the prior art can be solved.

Description

technical field [0001] The invention relates to the field of low-pressure chemical vapor deposition (LPCVD) polysilicon films, in particular to a method for improving the quality of low-pressure chemical vapor deposition polysilicon films. Background technique [0002] Polycrystalline silicon thin film combines the advantages of crystalline silicon material and amorphous silicon alloy thin film, and is a new type of functional thin film material widely used in energy science, information science and microelectronic technology. The LPCVD method is commonly used in the preparation of polysilicon thin films in integrated circuits. It has the advantages of fast growth rate, dense and uniform film formation, and large chip loading capacity. In this way, pure SiH 4 、SiH 4 +H 2 or SiH 4 +Ar is the source gas, under a certain substrate temperature, gas pressure and gas flow, the polysilicon film can be directly deposited on the solid surface. However, during the long-term use o...

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Application Information

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IPC IPC(8): C23C16/24C23C16/52
CPCC23C16/24C23C16/52
Inventor 施炜青贺贤汉
Owner 上海中欣晶圆半导体科技有限公司
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