Microcavity growth method based on nanocrystalline self-assembling

A growth method and self-assembly technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of high cost, large laser threshold, increased light loss, etc., and achieve high mode quality factor and good crystal quality. Effect

Active Publication Date: 2018-06-22
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the distributed Bragg reflector (DBR) structure and the vernier effect between two or more microcavities can obtain single-mode lasing, this method generally requires precise etching, which is expensive and com

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Microcavity growth method based on nanocrystalline self-assembling
  • Microcavity growth method based on nanocrystalline self-assembling
  • Microcavity growth method based on nanocrystalline self-assembling

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0028] Example 1

[0029] (1) 4ml octadecene, 1ml oleylamine, 0.5ml oleic acid, 69mg PbBr 2 Add to the three-necked flask, degas the three-necked flask containing the raw materials at 100 °C for 10 min, continue to mix thoroughly at 100 °C for 30 min, and then heat up to 180 °C in an Ar gas atmosphere and hold for 10 min.

[0030] (2) 0.4 ml of cesium oleate was rapidly injected into the three-necked flask, and rapidly cooled in an ice-water bath at 0°C after 5 s. The resulting CsPbBr 3 The average size of the quantum dots was 10 nm, and after centrifugation, they were dissolved in toluene at a concentration of 10 mg / ml.

[0031] (3) Take 1 ml of the 10 mg / ml quantum dots and put them in a brown vial to protect from light and deposit at 4°C.

[0032] (4) After 15 days, use a syringe to draw a small amount of deposited quantum dots and drop them on a clean silicon wafer, the toluene will naturally volatilize, and any vibration should be avoided throughout the process.

[00...

Example Embodiment

[0034] Example 2

[0035] This example mainly refers to the preparation process of rectangular microchips, the reaction temperature during the preparation of quantum dots, the amount of oleylamine added, the solvent of quantum dots, the concentration of quantum dots, the deposition temperature, the deposition time, and the influence of the substrate on the structure formation process. The specific implementation process refers to Example 1, the difference is that the reaction temperature, the amount of oleylamine added, the quantum dot solvent, the deposition temperature, and the substrate were changed respectively in the quantum dot preparation process. The specific experimental parameters are shown in Table 1.

[0036] Table 1 Example conditions of the preparation method of the rectangular sheet microcavity of the present invention

[0037]

[0038] Experiments show that changing the reaction temperature during the preparation of quantum dots is 170°C to 190°C. The higher...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a microcavity growth based on nanocrystalline self-assembling. The method comprises the following steps: perovskite quantum dot passivation treatment, low-temperature deposition treatment, and microcavity structure acquisition. The quality of the monocrystalline is improved through a self-assembling way, and the monocrystalline size can be controlled, thereby providing extremely important significance for the production of high-quality single-mode laser.

Description

technical field [0001] The invention relates to a method for controlling the growth of a laser microresonator, in particular a method for low-temperature growth of a rectangular perovskite microresonator based on nanocrystal self-assembly. This method is of great significance for the realization of high-quality single-mode lasers. Background technique [0002] The growth method of microcavities with precise control of specific size and morphology is important to realize high-quality novel functional devices. In general, chemical vapor deposition and solution synthesis methods are better choices. However, the high temperature and special gas atmosphere of chemical vapor deposition significantly increase the cost, and the excessive surfactant in the solution synthesis method also affects the performance of the sample. Self-assembly is a gentle way to control the growth of structures. [0003] Single-mode lasers have attracted considerable attention due to their applications...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B29/12C30B7/08C30B7/14B82Y40/00B82Y30/00
CPCB82Y30/00B82Y40/00C30B7/08C30B7/14C30B29/12
Inventor 张龙周纯董红星虞杰常浩唐冰周贝尔
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap