Preparation method of bromine-doped high-conductivity ultrathin graphene film

A graphene film, highly conductive technology, applied in graphene, chemical instruments and methods, inorganic chemistry, etc., can solve the problems of poor orientation of graphene film, poor AB stacking between layers, affecting the performance of graphene film, etc. , to increase the electron density, easy to fit, easy to operate

Active Publication Date: 2018-07-06
杭州德烯科技集团有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, at present, the thickness of the graphene film sintered at high temperature is generally above 1um, and a lot of gas is sealed inside. During the high-pressure pressing process, the closed pores are retained in the form of wrinkl

Method used

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  • Preparation method of bromine-doped high-conductivity ultrathin graphene film
  • Preparation method of bromine-doped high-conductivity ultrathin graphene film
  • Preparation method of bromine-doped high-conductivity ultrathin graphene film

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Embodiment 1

[0023] (1) Graphene oxide was prepared into a graphene oxide aqueous solution with a concentration of 0.5ug / mL, and the AAO membrane was used as the substrate to form a film by suction filtration.

[0024] (2) Place the graphene oxide film attached to the AAO in a closed container, and fumigate from the bottom to the top for 1 hour at a high temperature of 80 degrees HI.

[0025] (3) Apply the melted solid transfer agent camphor evenly on the surface of the reduced graphene oxide film by evaporation, and slowly cool it at room temperature until the basement film falls off naturally.

[0026] (4) Slowly volatilize the solid transfer agent from the graphene film supported by the solid transfer agent obtained above at 60 degrees Celsius to obtain an independent self-supporting graphene film.

[0027] (5) Place the above-mentioned independent self-supporting graphene film in a high-temperature furnace, heat up to 2000 degrees Celsius at a rate of 5 degrees Celsius per minute, and ...

Embodiment 2

[0030] A preparation method of a bromine-doped highly conductive ultra-thin graphene film, comprising the steps of:

[0031] (1) Graphene oxide was prepared into a graphene oxide aqueous solution with a concentration of 10ug / mL, and the AAO membrane was used as the substrate to form a film by suction filtration.

[0032] (2) Place the graphene oxide film attached to the AAO in a closed container, and fumigate from the bottom to the top at 100 degrees HI for 0.1 h.

[0033] (3) The melted solid transfer agent rosin was uniformly coated on the surface of the reduced graphene oxide film by casting method, and cooled naturally at room temperature until the basement film fell off naturally.

[0034] (4) volatilize the solid transfer agent from the graphene film supported by the solid transfer agent obtained above at 120 degrees to obtain an independent self-supporting graphene film.

[0035] (5) Place the above-mentioned independent self-supporting graphene film in a high-temperat...

Embodiment 3

[0038] A preparation method of a bromine-doped highly conductive ultra-thin graphene film, comprising the steps of:

[0039] (1) Graphene oxide is prepared into a graphene oxide aqueous solution with a concentration of 1 ug / mL, and the AAO membrane is used as the substrate to form a film by suction filtration.

[0040] (2) Place the graphene oxide film attached to the AAO in a closed container, and fumigate from the bottom to the top for 30 minutes at a high temperature of 100 degrees HI.

[0041] (3) The melted solid transfer agent rosin was uniformly coated on the surface of the reduced graphene oxide film by casting method, and cooled naturally at room temperature until the basement film fell off naturally.

[0042] (4) volatilize the solid transfer agent from the graphene film supported by the solid transfer agent obtained above at a temperature of 120°C to obtain an independent self-supporting graphene film.

[0043] (5) Place the above-mentioned independent self-support...

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Abstract

The invention discloses a preparation method of a bromine-doped high-conductivity ultrathin graphene film. The graphene film is prepared from graphene oxide through the steps of filtration extractionfilm formation, chemical reduction, solid-liquid synchronous transfer, high-temperature graphitization, bromine doping and the like. The graphene film is prepared from single-layer graphene oxide/reduced graphene oxide through physical cross-linking. The thickness of the graphene film is 10 to 2,000 atomic layers; the graphene oxide film is quite small in thickness, moreover, has abundant defectsexisting inside, and therefore, has quite good transparency and extremely good flexibility. After the chemical reduction, most functional groups disappear; the graphene film starts to conduct; throughhigh-temperature reduction, a graphene structure is repaired; the electron mobility is promoted; after the bromine doping, the concentration of graphene charge carriers is promoted, and the graphenefilm can be used for a high-flexibility transparent conductive device.

Description

technical field [0001] The invention relates to a high-performance nanometer material and a preparation method thereof, in particular to a preparation method of a bromine-doped highly conductive ultra-thin graphene film. Background technique [0002] Graphene film assembled with graphene oxide or graphene nanosheets macroscopically is the main application form of nanoscale graphene, and the commonly used preparation methods are suction filtration method, scraping film method, spin coating method, spray coating method and dip coating method. Through further high-temperature treatment, the defects of graphene can be repaired, and the electrical conductivity and thermal conductivity of the graphene film can be effectively improved. It can be widely used in portable electronic devices such as smart phones, smart portable hardware, tablet computers, and notebook computers. . [0003] However, at present, the thickness of the graphene film sintered at high temperature is generall...

Claims

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Application Information

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IPC IPC(8): C01B32/184
CPCC01B2204/04C01B2204/22
Inventor 高超彭蠡许震
Owner 杭州德烯科技集团有限公司
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