Device and method for preparing single crystal diamonds by laser enhanced plasma CVD

Abstract

The invention discloses a device and method for preparing single crystal diamonds by laser enhanced plasma CVD. The device comprises plasma CVD equipment and laser equipment, wherein more than 1 set of laser equipment is respectively positioned on the outside of a cylindrical cavity of the plasma CVD equipment, laser emitted by the laser equipment can irradiate onto a substrate table positioned inthe cavity of the plasma CVD equipment; the substrate table is positioned in the middle of the cavity of the plasma CVD equipment, a cooling water circulation system is arranged at the lower part ofthe substrate table and comprises a cooling water inlet and a cooling water outlet; and a raw material gas inlet and an extraction opening are formed in the bottom of the cavity of the plasma CVD equipment. The method combines microwave energy (or electric energy) with laser energy and improves the energy of plasma and the gas dissociation rate in a diamond synthesizing process by using low-cost high-energy laser, thereby improving the synthetic rate of the diamonds and effectively solving the problem of high-speed mass preparation of diamonds.

Description

technical field [0001] The invention belongs to the technical field of diamond processing, and in particular relates to a device and method for preparing single crystal diamond by laser-enhanced plasma CVD. Background technique [0002] Ordinary plasma CVD (Chemical Vapor Deposition) equipment synthesizes single crystal diamond at a relatively low synthesis rate, and the output is not high. If the rate needs to be increased, a higher power microwave source is required for improvement, which will increase the cost and energy consumption. Much larger, thereby increasing the cost of equipment, and also limiting the high-speed batch preparation of diamond. [0003] The existing technology adopts microwave (or direct current, hot wire) plasma chemical vapor deposition technology to synthesize single crystal diamond, and pure microwave (or electric energy) energy cannot obtain high-density plasma and high gas dissociation rate, making single crystal diamond The slow growth rate l...

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Problems solved by technology

[0002] Ordinary plasma CVD (Chemical Vapor Deposition) equipment synthesizes single crystal diamond at a relatively low synthesis rate, and the output is not high. If the rate needs to be increased, a higher power microwave source is required for improvement, which will increase the cost and energy consumption. Much larger, which increases the cost of equipment and limits the high-speed batch preparation of diamond

[0003] The existing technology adopts microwave (or direct current, hot wire) plasma chemical vapor deposition technology to synthesize single crystal diamond, and pure microwave (or electric energy) energy cannot obtain high-density plasma and high gas dissociation rate, making single crystal diamond The growth rate is low, resulting in low product efficiency and high cost, hindering its large-scale application

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