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Preparation technology of dielectric composite material molded through hot pressing

A composite material and hot-press forming technology, which is applied in the field of preparation technology of dielectric composite materials, can solve problems such as difficulty in meeting the performance requirements of electronic materials, and achieve the effect of improving performance.

Inactive Publication Date: 2018-07-13
杨秀枝
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although the electrochemical properties of polymer-based composite dielectric materials obtained through simple mixing have been improved to a certain extent and some defects have been overcome, it is still difficult to meet the increasingly higher performance requirements of electronic materials in the electronics industry.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] (1) Add 6 parts of rare earth, 5 parts of triisobutylaluminum, and 3 parts of 4-nitrophthalonitrile to a potassium permanganate solution with a concentration of 0.5mol / L, and perform ultrasonication in an ultrasonic reactor. Dispersion reaction, the power of the ultrasonic dispersion reaction is 1200W, the reaction time is 25 minutes, and then the ultrasonic dispersion reaction solution is sent to an oil bath at 110°C, kept stirring for 1.5 hours, and then centrifuged, and the separated precipitated product is separated at 90 Vacuum drying at °C for 10 hours to obtain an oxidatively modified product;

[0022] (2) Place the modified oxidation product obtained in step (1) in an ultrasonic reactor, add a sulfuric acid solution with a concentration of 20% according to the ratio of solid to liquid ratio of 1:20, and then react ultrasonically with a power of 1500W for 2 hours. After the reaction is completed, add distilled water equal to the volume of sulfuric acid solution t...

Embodiment 2

[0028] (1) Add 7 parts of rare earth, 6 parts of triisobutylaluminum, and 4 parts of 4-nitrophthalonitrile into a potassium permanganate solution with a concentration of 0.5mol / L, and perform ultrasonication in an ultrasonic reactor. Dispersion reaction, the power of the ultrasonic dispersion reaction is 1200W, the reaction time is 30 minutes, and then the ultrasonic dispersion reaction solution is sent to an oil bath at 115°C, kept stirring for 2 hours, and then centrifuged, and the separated precipitated product is separated at 90 Vacuum drying at °C for 11 hours to obtain an oxidatively modified product;

[0029] (2) Place the modified oxidation product obtained in step (1) in an ultrasonic reactor, add a sulfuric acid solution with a concentration of 20% according to the ratio of solid-to-liquid ratio of 1:20, and then react ultrasonically with a power of 1500W for 2.5 hours, ultrasonically After the reaction is completed, add distilled water equal to the volume of the sul...

Embodiment 3

[0035] (1) Add 8 parts of rare earth, 7 parts of triisobutylaluminum, and 5 parts of 4-nitrophthalonitrile to a potassium permanganate solution with a concentration of 0.5mol / L, and perform ultrasonication in an ultrasonic reactor. Dispersion reaction, the power of the ultrasonic dispersion reaction is 1200W, the reaction time is 35 minutes, and then the ultrasonic dispersion reaction solution is sent to an oil bath at 120°C, kept stirring for 2.5 hours, and then centrifuged, and the separated precipitated product is separated at 90 Vacuum drying at °C for 12 hours to obtain an oxidatively modified product;

[0036] (2) Place the modified oxidation product obtained in step (1) in an ultrasonic reactor, add a sulfuric acid solution with a concentration of 20% according to the ratio of solid-to-liquid ratio of 1:20, and then react ultrasonically for 3 hours with a power of 1500W. After the reaction is completed, add distilled water equal to the volume of the sulfuric acid soluti...

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PUM

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Abstract

The invention discloses a preparation technology of a dielectric composite material molded through hot pressing. The technology comprises the following steps: adding rare earth, triisobutyl aluminum and 4-nitrophthalonitrile into a potassium permanganate solution and carrying out ultrasonic dispersion; carrying out heat preservation on an ultrasonic reaction solution in an oil bath and stirring; centrifuging and separating, and drying to obtain an oxidization modified product; then adding a sulfuric acid solution into the oxidization modified product and carrying out ultrasonic reaction; afterthe ultrasonic reaction is finished, diluting with water and filtering; washing obtained sediment with water until the sediment is neutral; after drying, carrying out ball milling to obtain a ball milling product; then adding triphenyl phosphite, glycerol tristearate and the ball milling product into an ice water bath and adding an ethylene glycol solution; after carrying out ultrasonic vibration, adding a vulcanizing agent and a coupling agent and continually carrying out the ultrasonic vibration; melting and blending the obtained mixed solution and alkenyl succinic anhydride, granulating and carrying out hot pressing to obtain the finished-product dielectric composite material. The prepared dielectric composite material has the advantages of high dielectric constant and low dielectric loss and has a good application prospect.

Description

technical field [0001] The invention relates to the technical field of electronic materials, in particular to a preparation process of a dielectric composite material formed by hot pressing. Background technique [0002] High dielectric constant composite materials have very good application prospects in the field of microelectronics, motor and cable industry because of their good performance of storing electric energy and uniform electric field, coupled with good mechanical properties and low cost. People's research on dielectric materials started from inorganic piezoelectric ceramic materials. Inorganic piezoelectric ceramic materials have high dielectric constant and high thermoelectric stability, but they are brittle and have high processing temperature. With the rapid development of the information and microelectronics industry, the application requirements for miniaturization, integration, intelligence, high frequency and planarization of semiconductor devices have inc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08F122/04C08K13/06C08K9/02C08K9/04C08K5/56C08K5/526C08K5/103B29B9/06B29C43/00
CPCC08F122/04B29B9/06B29C43/003C08K5/103C08K5/14C08K5/526C08K5/56C08K9/02C08K9/04C08K13/06
Inventor 杨秀枝
Owner 杨秀枝