Method for preparing high-temperature compound bulk crystals

A compound, high-temperature technology, applied in the field of powder metallurgy, can solve the problems of high dislocation rate, low efficiency, and many micropores, and achieve the effects of low dislocation rate, high efficiency, and less parasitic reactions

Active Publication Date: 2018-07-20
张格梅
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Regardless of the HVPE method or the MOCVD method, it is time-consuming and inefficient (growth rate: 0.1-0.2mm / hour), and has a high dislocation rate and many micropores

Method used

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  • Method for preparing high-temperature compound bulk crystals
  • Method for preparing high-temperature compound bulk crystals
  • Method for preparing high-temperature compound bulk crystals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Such as figure 2 As shown, this embodiment includes a source metal liquefier 210, a high-pressure gas-liquid mixing atomizer 220, a filter 230, a molten metal recovery system 240, a particle preprocessor 250, a compound reactor 260 and a deposition grower 270; The source metal liquefier 210 is located above the high-pressure gas-liquid mixing atomizer 220, which heats and liquefies the source metal and transports it to the high-pressure gas-liquid mixing atomizer 220; the high-pressure gas-liquid mixing atomizer 220 is set in the metal liquid recovery system At the top of 240, the source metal liquid flow in the high-pressure gas-liquid mixing atomizer 220 forms fine or ultra-fine metal droplets through high-pressure stirring and mixing; On the processor 250, the ultra-fine metal droplets are introduced into the particle pre-processor 250 under the joint action of airflow drive and attraction; the metal liquid recovery system 240 is located below the source metal lique...

Embodiment 2

[0074] Such as Figure 10 As shown, this embodiment is used to prepare gallium nitride bulk material, and the specific process is as follows:

[0075] Step 201, vacuumize and heat pure gallium metal under vacuum conditions, and the heating temperature is higher than 29.78°C, so that gallium metal becomes liquid; inert gas nitrogen or argon participates in protection to prevent external impurity gas pollution;

[0076] Step 202, performing multi-stage high-pressure atomization on liquid gallium, performing gas-liquid mixing and multi-stage high-pressure crushing, so that it gradually becomes fine and ultrafine gallium metal droplets;

[0077] Step 203, use the gas and air flow screening system to screen the fine and ultrafine gallium metal droplets, and process them separately, so that the ultrafine gallium metal droplets / particles can smoothly enter the spheroidization processing system, while the larger and heavier The gallium metal droplets fall one after another and gather...

Embodiment 3

[0086] Such as Figure 11 As shown, this embodiment is used to prepare aluminum nitride bulk material, and the specific process is as follows:

[0087] Step 301, vacuumize and heat pure metal aluminum under vacuum conditions, and the heating temperature is higher than 660.4°C, so that the aluminum metal becomes liquid; inert gas nitrogen or argon participates in protection to prevent external impurity gas pollution;

[0088] Step 302, performing multi-stage high-pressure atomization on the liquid aluminum, performing gas-liquid mixing and multi-stage high-pressure crushing, so that it gradually becomes fine and ultra-fine aluminum metal droplets;

[0089] Step 203, use the gas and airflow screening system to screen the fine and ultra-fine aluminum metal droplets and process them separately, so that the ultrafine aluminum metal droplets / particles can smoothly enter the spheroidization processing system, while the larger and heavier The aluminum metal droplets fall one after an...

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Abstract

The invention discloses a method for preparing high-temperature compound bulk crystals. The vacuuming and high-temperature melting treatment is performed on source metal to form liquid-state metal; gas / liquid mixing and multistage high-pressure crushing are performed to form the liquid-stage metal to atomized metal drops; ultrafine metal drops are screened, and are guided into a spherical treatment system; larger metal drops fall to the bottom of a metal liquid recovery system; the falling metal drops are collected for recovery and retreatment; the ultrafine metal drops are treated to form spherical drops / particles; and the ultrafine metal drops / particles are slowly accumulated and grown in reaction and deposition systems through chemical reaction and vapor deposition to form cylindrical compound bulk crystals.

Description

technical field [0001] The invention relates to a powder metallurgy method, in particular to a method for preparing high-temperature compound bulk crystals. Background technique [0002] Refractory compound materials have important uses in the fields of electronics and semiconductors due to their unique physical characteristics and working characteristics. Aluminum nitride (AlN) is the most ideal insulation and heat dissipation material in optoelectronic device packaging because it is non-toxic and non-conductive and has a thermal conductivity equivalent to copper; gallium nitride (GaN)-based alloys are blue lasers, high-brightness Basic materials for LED devices and high-frequency power devices; silicon carbide (SiC) has a high electric field breakdown voltage and is the preferred material for preparing high-power devices; gallium oxide (Ga 2 o 3 ) has received more and more attention because of its low manufacturing cost and excellent high-voltage resistance characterist...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F9/08B22F1/00C30B25/02
CPCC30B25/02B22F9/08B22F1/065
Inventor 张格梅
Owner 张格梅
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