Method and device for growing high-efficiency large-size single crystal diamond

Abstract

The invention provides an efficient large-size monocrystal diamond growth method and device. The growth method provided by the invention comprises the following steps that a diamond substrate is placed on a substrate table in a microwave resonant cavity; reaction gas containing a carbon source and hydrogen gas is conveyed into a laser dissociation cavity through a spray head for full ionization; an electric field is applied between the substrate table and the spray head; then, ionized gas is introduced into the microwave resonant cavity for performing microwave plasma chemical vapor deposition; monocrystal diamond fast grows on the substrate. The device comprises a vapor deposition part, a laser dissociation part and an electric field application part, wherein the vapor deposition part comprises the microwave resonant cavity, the substrate table and a microwave generator connected with the microwave resonant cavity; the laser dissociation part comprises a laser dissociation cavity, a spray head, a laser and a connecting pipe; the laser dissociation cavity is communicated with the microwave resonant cavity; reaction gas is conveyed into the laser dissociation cavity by the spray head; the connecting pipe is communicated with the laser dissociation cavity and the microwave resonant cavity; the electric field application part is connected with the substrate table and the spray head and applies an external electric field.

Description

technical field

[0001] The invention belongs to the technical field of diamond film preparation, and in particular relates to a method for growing high-efficiency large-size single crystal diamond and a device for growing single crystal diamond using the method. Background technique

[0002] Diamond is a wide bandgap semiconductor material with a bandgap width of 5.5eV. It has extremely excellent physical properties, such as high carrier mobility and high thermal conductivity (22W·cm -1 ·K -1 ), high breakdown electric field (10MV·cm -1 ), high carrier saturation rate (the electron carrier saturation rate is 1.5×10 7 ~2.7×10 7 cm·s -1 , the hole carrier saturation rate is 0.85×10 7 ~1.2×10 7 cm·s -1 ) and low dielectric constant (5.7), etc. Based on these excellent performance parameters, diamond is considered to be the most promising material for the preparation of next-generation high-power, high-frequency, high-temperature and low-power loss electronic devices. ...

Examples

Embodiment 1

[0038] Such as figure 1 As shown, the high-efficiency large-size single crystal diamond growth device 10 includes a vapor deposition part 20 , a laser dissociation part 30 , an electric field application part (not shown in the figure), and a gas supply part 40 .

[0039] The vapor deposition unit 20 is an MPCVD device, which includes a microwave resonant cavity 21 , a substrate stage 22 , and a microwave generator 23 .

[0040] The microwave resonant cavity 21 is used for diamond epitaxial growth. In this embodiment, the inner diameter of the microwave resonant cavity 21 is 360 mm. The lower part of the side of the microwave resonator 21 is provided with an exhaust port 21a, and the exhaust port 21a is connected to the vacuum pump 21c through the bellows 21b; before the gas is introduced into the microwave resonator 21, the pressure in the cavity can be controlled at 0.1Pa by the vacuum pump 21c or higher; a thermocouple sensor 21d is installed on the side of the microwave ca...

Embodiment 2

[0055] The method of combining laser dissociation chamber 31 with microwave plasma chemical vapor deposition is used to grow single crystal diamond. Before deposition, the growth surface of the seed crystal is firstly polished, pickled and ultrasonically washed in deionized water, dried with hot air and placed on the substrate stage 22. Utilize the vacuum pump 21c to evacuate the air pressure in the chamber to 0.1Pa, and feed 100 sccm of H 2 The entire microwave resonant cavity 21 is replaced. Turn on the microwave generator 23, set the microwave power and air pressure at 8kW and 18kPa respectively, and control the deposition temperature at 980°C. 4 :H 2 =1.5% (V / V), the total gas flow is controlled at 400 sccm. Turn on the laser 33, select a femtosecond laser with a center wavelength of 1061nm, a pulse width of 80fs, and a laser incident peak power of 2×10 12 W / cm 2 . The rear mirror 31c on the laser dissociation cavity 31 has a reflectivity of 100% to the incident ligh...

Embodiment 3

[0057] The method of combining laser dissociation chamber 31 with microwave plasma chemical vapor deposition is used to grow single crystal diamond. Before deposition, the growth surface of the seed crystal is firstly polished, pickled and ultrasonically washed in deionized water, dried with hot air and placed on the substrate stage 22. Utilize the vacuum pump 21c to evacuate the air pressure in the chamber to 0.1Pa, and feed 100 sccm of H 2 The entire microwave resonant cavity 21 is replaced. Turn on the microwave generator 23, set the microwave power and air pressure at 8kW and 18kPa respectively, and control the deposition temperature at 980°C. After reaching stability, open the gas supply part 40 to feed the reaction gas, and the CH in the reaction gas 4 :H 2 =2% (V / V), the total gas flow is controlled at 400 sccm. Turn on the laser 33, select the femtosecond laser with a center wavelength of 1061nm, a pulse width of 80fs, and a laser incident peak power of 3×10 12 W / c...

technical field

[0001] The invention belongs to the technical field of diamond film preparation, and in particular relates to a method for growing high-efficiency large-size single crystal diamond and a device for growing single crystal diamond using the method. Background technique

[0002] Diamond is a wide bandgap semiconductor material with a bandgap width of 5.5eV. It has extremely excellent physical properties, such as high carrier mobility and high thermal conductivity (22W·cm -1 ·K -1 ), high breakdown electric field (10MV·cm -1 ), high carrier saturation rate (the electron carrier saturation rate is 1.5×10 7 ~2.7×10 7 cm·s -1 , the hole carrier saturation rate is 0.85×10 7 ~1.2×10 7 cm·s -1 ) and low dielectric constant (5.7), etc. Based on these excellent performance parameters, diamond is considered to be the most promising material for the preparation of next-generation high-power, high-frequency, high-temperature and low-power loss electronic devices. ...

Examples

Embodiment 1

[0038] Such as figure 1 As shown, the high-efficiency large-size single crystal diamond growth device 10 includes a vapor deposition part 20 , a laser dissociation part 30 , an electric field application part (not shown in the figure), and a gas supply part 40 .

[0039] The vapor deposition unit 20 is an MPCVD device, which includes a microwave resonant cavity 21 , a substrate stage 22 , and a microwave generator 23 .

[0040] The microwave resonant cavity 21 is used for diamond epitaxial growth. In this embodiment, the inner diameter of the microwave resonant cavity 21 is 360 mm. The lower part of the side of the microwave resonator 21 is provided with an exhaust port 21a, and the exhaust port 21a is connected to the vacuum pump 21c through the bellows 21b; before the gas is introduced into the microwave resonator 21, the pressure in the cavity can be controlled at 0.1Pa by the vacuum pump 21c or higher; a thermocouple sensor 21d is installed on the side of the microwave ca...

Embodiment 2

[0055] The method of combining laser dissociation chamber 31 with microwave plasma chemical vapor deposition is used to grow single crystal diamond. Before deposition, the growth surface of the seed crystal is firstly polished, pickled and ultrasonically washed in deionized water, dried with hot air and placed on the substrate stage 22. Utilize the vacuum pump 21c to evacuate the air pressure in the chamber to 0.1Pa, and feed 100 sccm of H 2 The entire microwave resonant cavity 21 is replaced. Turn on the microwave generator 23, set the microwave power and air pressure at 8kW and 18kPa respectively, and control the deposition temperature at 980°C. 4 :H 2 =1.5% (V / V), the total gas flow is controlled at 400 sccm. Turn on the laser 33, select a femtosecond laser with a center wavelength of 1061nm, a pulse width of 80fs, and a laser incident peak power of 2×10 12 W / cm 2 . The rear mirror 31c on the laser dissociation cavity 31 has a reflectivity of 100% to the incident ligh...

Embodiment 3

[0057] The method of combining laser dissociation chamber 31 with microwave plasma chemical vapor deposition is used to grow single crystal diamond. Before deposition, the growth surface of the seed crystal is firstly polished, pickled and ultrasonically washed in deionized water, dried with hot air and placed on the substrate stage 22. Utilize the vacuum pump 21c to evacuate the air pressure in the chamber to 0.1Pa, and feed 100 sccm of H 2 The entire microwave resonant cavity 21 is replaced. Turn on the microwave generator 23, set the microwave power and air pressure at 8kW and 18kPa respectively, and control the deposition temperature at 980°C. After reaching stability, open the gas supply part 40 to feed the reaction gas, and the CH in the reaction gas 4 :H 2 =2% (V / V), the total gas flow is controlled at 400 sccm. Turn on the laser 33, select the femtosecond laser with a center wavelength of 1061nm, a pulse width of 80fs, and a laser incident peak power of 3×10 12 W / c...

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