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Formation method of pzt ferroelectric film

A ferroelectric and liquid composition technology, which is applied in the manufacture/assembly of electric solid devices, piezoelectric/electrostrictive devices, circuits, etc., can solve problems such as cracks and stress cannot be fully relaxed, and achieve full stress Effect

Active Publication Date: 2021-11-05
JAPAN ADVANCED INST OF SCI & TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] Although the method for producing the PZT film shown in the above-mentioned Patent Document 1 can solve these problems, there is still the following problem: Since the reduction involves raising the temperature of the PZT precursor film at a predetermined rate and heating it at 300 to 450°C, Therefore, if the amount of coating per application increases, the stress cannot be sufficiently relaxed when the volume shrinks due to the decomposition of organic matter in the liquid composition, and cracks will occur after firing

Method used

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  • Formation method of pzt ferroelectric film
  • Formation method of pzt ferroelectric film
  • Formation method of pzt ferroelectric film

Examples

Experimental program
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Effect test

Embodiment 1

[0045] Weigh lead acetate trihydrate, titanium tetraisopropoxide (iv), zirconium tetrabutoxide (iv), acetylacetone, and propylene glycol respectively so that the ratio of each metal element of Pb, Zr, and Ti in the PZT precursor is Pb :Zr:Ti=120:40:60, put into the reaction container, and reflux at 150 degreeC for 1 hour under nitrogen atmosphere. After reflux, unreacted materials were removed by distillation under reduced pressure. After cooling the liquid from which unreacted substances were removed at room temperature, water was added to make 2 moles of water relative to 1 mole of the PZT precursor, and the mixture was refluxed at 150° C. for 1 hour. After cooling to room temperature, a PZT precursor liquid (liquid composition) was prepared. To this PZT precursor liquid, 0.025 mol of polyvinylpyrrolidone (PVP) as a reaction control substance in terms of monomer was added to 1 mol of the PZT precursor, and stirred at room temperature for 24 hours. After stirring, ethanol, ...

Embodiment 2

[0049] A PZT ferroelectric film was obtained in the same manner as in Example 1 except that the substrate having the gelled dry film was heated to 200° C. during ultraviolet irradiation.

Embodiment 3

[0051] The substrate having the gelled dry film was heated to 200°C during ultraviolet irradiation, and the holding temperature during firing was set to 500°C. Other than that, it carried out similarly to Example 1, and obtained the PZT ferroelectric film.

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Abstract

The present invention includes the following steps: a step of coating a liquid composition for forming a PZT ferroelectric film; a step of drying the film obtained by applying the liquid composition; A step of irradiating ultraviolet rays at a temperature of 200° C.; and, after performing the coating step, drying step, and ultraviolet ray irradiation step once or more than once, in an oxygen-containing atmosphere at a rate of 0.5° C. / second or more, or without The step of heating the ferroelectric film precursor film irradiated with ultraviolet rays at a rate of 0.2°C / sec or more and maintaining at a temperature of 400 to 500°C in an oxygen-containing atmosphere to crystallize the ferroelectric film precursor film. Here, the amount of application of the liquid composition per application is set so that the thickness of the ferroelectric film per application is 150 nm or more, and ozone is supplied during ultraviolet irradiation.

Description

technical field [0001] The invention relates to a method for forming a PZT ferroelectric film based on a CSD (Chemical Solution Deposition, chemical solution deposition) method. More specifically, it relates to the formation of a film having a thickness of 150 nm or more and crystallinity without cracks after firing by one application of a liquid composition for forming a PZT ferroelectric film (hereinafter, sometimes simply referred to as a "liquid composition"). A method for PZT ferroelectric films with high dielectric and piezoelectric properties. It should be noted that this international application claims priority based on Japanese Patent Application No. 168480 (Japanese Patent Application No. 2015-168480) filed on August 28, 2015, and the entire content of Japanese Patent Application No. 2015-168480 is cited in this international application middle. Background technique [0002] When producing a PZT ferroelectric film with a perovskite structure by the sol-gel metho...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/43H01L41/318H01L21/316H01L21/8246H01L27/105H01L41/187
CPCH10N30/8554H10N30/078H10B41/30H10N30/857H10N30/097H10B53/00H10N30/076
Inventor 田头裕己志村礼司郎高村禅李金望下田达也渡边敏昭曾山信幸
Owner JAPAN ADVANCED INST OF SCI & TECH
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