Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of two-dimensional porous boron-nitrogen double-doping carbon nanomaterial and application thereof

A carbon nanomaterial, double doping technology, applied in nanocarbon, hybrid capacitor electrodes, etc., to achieve the effect of low equipment requirements, high electrochemical stability, and high specific capacitance characteristics

Inactive Publication Date: 2018-08-24
JIANGSU UNIV
View PDF7 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are no reports on boron-nitrogen double-doped two-dimensional porous carbon nanomaterials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of two-dimensional porous boron-nitrogen double-doping carbon nanomaterial and application thereof
  • Preparation method of two-dimensional porous boron-nitrogen double-doping carbon nanomaterial and application thereof
  • Preparation method of two-dimensional porous boron-nitrogen double-doping carbon nanomaterial and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] (1) Mix 10g of urea and 1ml of 1-butyl-3-methylimidazolium tetrafluoroborate and grind them. After fully grinding, put the evenly ground sample into a crucible and place it in a muffle furnace at 2°C. / min heating rate to 550 ° C, and calcined at this temperature for 3 hours;

[0025] (2) the graphitized boron-nitrogen-doped carbon material (B-g-CN) prepared in step (1) 550 ) was dispersed in 40 mL of aqueous glucose solution with a concentration of 0.0325 g / mL, and was uniformly ultrasonicated, poured into a reaction kettle, and reacted in a constant temperature oven at 170° C. for 4 hours.

[0026] (3) The glucose-wrapped graphitized boron-nitrogen double-doped carbon material (B-g-CN) prepared in step (2) 550 / glu) was placed in a tube furnace, and calcined at 800 °C for 1 h at a heating rate of 3 °C / min in a high-temperature argon atmosphere to obtain a two-dimensional porous boron-nitrogen double-doped carbon nanomaterial.

[0027] figure 1 It is a TEM image of ...

Embodiment 2

[0031] (1) Mix 10g of urea with 0.5ml of 1-butyl-3-methylimidazolium tetrafluoroborate and grind it. After fully grinding, put the evenly ground sample into a crucible in a muffle furnace. The heating rate of ℃ / min is raised to 550℃, and calcined at this temperature for 3h;

[0032] (2) the graphitized boron-nitrogen-doped carbon material (B-g-CN) prepared in step (1) 550 ) was dispersed in 40 mL of aqueous glucose solution with a concentration of 0.0325 g / mL, and was uniformly ultrasonicated, poured into a reaction kettle, and reacted in a constant temperature oven at 170° C. for 4 hours.

[0033] (3) The glucose-wrapped graphitized boron-nitrogen double-doped carbon material (B-g-CN) prepared in step (2) 550 / glu) was placed in a tube furnace, and calcined at 800 °C for 1 h at a heating rate of 3 °C / min in a high-temperature argon atmosphere to obtain a two-dimensional porous boron-nitrogen double-doped carbon nanomaterial.

Embodiment 3

[0035] (1) Mix 10g of urea with 1.5ml of 1-butyl-3-methylimidazolium tetrafluoroborate and grind it. After fully grinding, put the evenly ground sample into a crucible in a muffle furnace. The heating rate of ℃ / min is raised to 550℃, and calcined at this temperature for 3h;

[0036] (2) the graphitized boron-nitrogen-doped carbon material (B-g-CN) prepared in step (1) 550 ) was dispersed in 40 mL of aqueous glucose solution with a concentration of 0.0325 g / mL, and was uniformly ultrasonicated, poured into a reaction kettle, and reacted in a constant temperature oven at 170° C. for 4 hours.

[0037] (3) The glucose-wrapped graphitized boron-nitrogen double-doped carbon material (B-g-CN) prepared in step (2) 550 / glu) was placed in a tube furnace, and calcined at 800 °C for 1 h at a heating rate of 3 °C / min in a high-temperature argon atmosphere to obtain a two-dimensional porous boron-nitrogen double-doped carbon nanomaterial.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the field of modified carbon nanomaterials and discloses a preparation method of a two-dimensional porous boron-nitrogen double-doping carbon nanomaterial and application thereof. The preparation method disclosed by the invention comprises the following steps: taking urea as a structure template, taking 1-butyl-3-methylimidazolium tetrafluoroborate as a pore forming substance and a doping agent, taking glucose as a carbon source, calcining and performing hydrothermal treatment, thereby obtaining the product. The method disclosed by the invention is simple in operation,short in synthesis period, excellent in repeatability, low in cost and convenient for industrial implementation. The porous boron-nitrogen double-doping carbon nanosheets prepared by the method disclosed by the invention have a uniform and porous thin-layer structure and large specific surface area. Meanwhile, due to introduction of boron atoms, the conductivity is enhanced, the redox activity can be enhanced by virtue of doping of the nitrogen, and ay capacitance is improved. When serving as an electrode material of a supercapacitor, the carbon nanomaterial has high electrochemical energy storage activities including high specific capacitance and excellent cycling stability. When charging / discharging current density is 0.1A / g, the highest specific capacitance can reach 550F / g, and the specific capacitance is much higher than that of most of the carbon-based materials.

Description

technical field [0001] The invention belongs to the field of preparation of modified nano-carbon materials, in particular to a preparation method of a two-dimensional porous boron-nitrogen double-doped carbon nano-supercapacitor electrode material. technical background [0002] Supercapacitor, a new type of energy storage device with higher power density, faster charge and discharge speed and better cycle stability than traditional capacitors. Although the power density of supercapacitor is high, its energy density is low, which limits its development to some extent. In order to increase the energy density without reducing the power density and cycle life, exploring and developing high-performance supercapacitor electrode materials has become the most important research content at present. According to different charge storage principles, supercapacitors can be divided into electric double layer supercapacitors, Faraday pseudocapacitive supercapacitors and hybrid supercapac...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/15H01G11/24H01G11/30H01G11/36H01G11/38H01G11/44
CPCC01B32/15H01G11/24H01G11/30H01G11/36H01G11/38H01G11/44Y02E60/13
Inventor 孔丽蓉徐超陈泉润徐钟韵沈小平
Owner JIANGSU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com