Organic electroluminescent device and preparation method thereof
An electroluminescent device, electroluminescent technology, applied in the direction of electric solid device, semiconductor/solid state device manufacturing, electrical components, etc., can solve the problems of ultra-high vacuum conditions, unsuitable for large-scale production, etc., to achieve high material utilization, suitable for The effect of large-scale production and a wide range of choices
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[0030] The method for preparing an organic electroluminescent device described above is characterized in that it comprises the following steps:
[0031] ①Using de-detergent, deionized water, acetone and ethanol solution to ultrasonically clean the substrate with the anode layer, after cleaning, put it into an oven for drying.
[0032] ②The hole injection layer, the hole transport layer, the light emitting layer and the electron transport layer are sequentially prepared on the anode layer by a wet process, and then moved into the vacuum coating chamber to prepare the cathode layer to obtain an organic electroluminescent device. Preferably, the hole injection layer, the hole transport layer, the light-emitting layer and the electron transport layer are sequentially prepared on the anode layer of the substrate through a wet process. The wet process may adopt spin coating, dip coating, inkjet printing, and roller coating. One or more of LB films. The cathode layer is deposited by vacu...
Example Embodiment
[0041] Example 1
[0042] Such as figure 1 As shown, the hole injection layer 3 in the device structure is PEDOT:PSS, the hole transport layer 4 is TAPC, the host material in the yellow light emitting layer 5 is CBP, and the guest material is the yellow light emitting material emitterY with thermally activated delayed fluorescence characteristics. The electron donor is a phenothiazine group, the electron acceptor is a benzophenone group, and the doping mass ratio is a guest material: host material = 10%, the electron transport layer 6 uses TPBI, and the cathode layer is Mg:Ag Alloy, the ratio is 10:1. The whole device structure is described as:
[0043] Glass substrate / ITO / PEDOT:PSS(40nm) / TAPC(20nm) / CBP:10%emitterY(20nm) / TPBI(40nm) / Mg:Ag(10:1,100nm)
[0044] The preparation method is as follows:
[0045] (1) The transparent conductive substrate ITO glass is ultrasonically cleaned with detergent, deionized water, acetone, and ethanol solution respectively, and then placed in an oven ...
Example Embodiment
[0057] Example 2
[0058] Such as figure 1 As shown, the hole injection layer 3 in the device structure is PEDOT:PSS, the hole transport layer 4 is TAPC, the host material in the blue light emitting layer 5 is, and the guest material is the blue light emitting material emitterB with thermally activated delayed fluorescence characteristics. The electron donor is an acridine group, the electron acceptor is a diphenylsulfone group, and the doping mass ratio is the guest material: host material = 50%, the electron transport layer 6 uses DPEPO, and the cathode layer is Mg:Ag alloy. The ratio is 10:1. The whole device structure is described as:
[0059] Glass substrate / ITO / PEDOT:PSS(40nm) / TAPC(60nm) / MCP:0.1%emitterB(20nm) / DPEPO(40nm) / Mg:Ag(10:1, 100nm)
[0060] The preparation steps of the device are similar to those in Example 1.
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