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Porous metal halide film, fabrication method thereof, and fabrication method of organometal halide having perovskite structure using the same

A technology of porous metals and metal halides, applied in halide preparation methods, chemical instruments and methods, lead halides, etc., can solve the problems of low material cost and insufficient large-scale research

Inactive Publication Date: 2018-09-25
KOREA RES INST OF CHEM TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The material cost of this organic-inorganic perovskite compound is very low, and it can be used in a low-temperature process or a low-cost solution process, so it is commercially excellent. The research on chemical process and large-area production is not perfect enough

Method used

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  • Porous metal halide film, fabrication method thereof, and fabrication method of organometal halide having perovskite structure using the same
  • Porous metal halide film, fabrication method thereof, and fabrication method of organometal halide having perovskite structure using the same
  • Porous metal halide film, fabrication method thereof, and fabrication method of organometal halide having perovskite structure using the same

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[0149] The preparation method of the metal halide film of the present invention comprises making a precursor film (adduct layer) containing a metal halide-guest molecule adduct (adduct of metal halide and guest molecule) and satisfying the polar proticity of the following relational formula 6 The step of preparing a porous metal halide membrane by contacting with a solvent.

[0150] (relational expression 6)

[0151] δ h (gm)h (pa)

[0152] In relation 6, δ h (gm) is the hydrogen bond component (δ h , hydrogen bonding component, MPa 0.5 ),δ h (pa) is the hydrogen bond component (δ h , hydrogen bonding component, MPa 0.5 ).

[0153] In a precursor film containing a metal halide-guest molecule adduct, the metal halide-guest molecule adduct can be composed of metal cations and halide anions and guest molecules (guest molecule, hereinafter, GM) that constitute the perovskite compound. compound of.

[0154] In detail, the metal halide-guest molecule adduct may be a compou...

Embodiment 1

[0270] The PbI of 0.6g will be purchased from Sigma Aldrich (SIGMA-ALDRICH Co.) 2 Powder (Lead iodide, 99%) was dropped into 0.2ml of methyl sulfoxide (DMSO) (relative to 1 mole of PbI 2 , 2.17 moles of DMSO) and 0.8 ml of N,N-dimethylformamide (DMF) in a mixed solvent to prepare an adduct solution.

[0271] The prepared adduct solution was injected into the FTO substrate (coated with fluorine-containing tin oxide glass substrate, FTO; F-doped SnO 2 , 8ohms / cm 2 , Pilkington) on the spinning center, spin-coating at a speed of 3000 rpm for 30 seconds to prepare a dry precursor film (thickness of the film is 0.3 μm).

[0272] After immersing the prepared precursor film in isopropanol (anhydrous 2-propanol, IPA, Sigma-Aldrich) for 20 seconds, separate and recover the film and blow it with an argon gun with a weak wind, and dry it at room temperature to prepare the guest molecule (DMSO) Removal of porous metal halide membranes. Afterwards, the prepared porous metal halide memb...

Embodiment 2

[0288] The same as in Example 1, but immersing the precursor film in isopropanol for 10 seconds to prepare a porous metal halide film. Afterwards, in the same manner as in Example 1, the prepared porous metal halide membrane was respectively immersed in an organic halide solution (40 mg of NH 3 CH 3 1 / 1ml of isopropanol) for 10 seconds, 20 seconds or 30 seconds to prepare the perovskite compound film.

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Abstract

Provided are a porous metal halide film that reacts with an organic halide to be converted into an organometal halide having a perovskite structure, thereby fabricating the organometal halide, a fabrication method thereof, and a fabrication method of an organometal halide having a perovskite structure using the same, and specifically, the porous metal halide film according to the present disclosure satisfies Relational Expression 1 below: I (101) / I (001)>=0.5 in Relational Expression 1, 1(101) is a diffraction intensity of a (101) plane in X-ray diffraction pattern using a Cu K alpha line ofthe porous metal halide film, and I(001) is a diffraction intensity of the (001) plane in the same X-ray diffraction pattern.

Description

technical field [0001] The present invention relates to a porous metal halide film, a method for producing the same, and a method for producing an organometallic halide having a perovskite structure using the same. Specifically, it relates to a perovskite that can be converted into a perovskite with excellent photoelectric conversion efficiency in an extremely short time. A porous metal halide film of an ore-structured organometallic halide, a method for producing the same, and a method for producing a perovskite-structured organometallic halide using the same. Background technique [0002] Perovskite-structured organometallic halides, also known as organometal halide perovskite compounds or organic-inorganic perovskite compounds, contain organic cations (A), metal cations (M) and halide anions ( X), by AMX 3 The chemical formula represents the substance. [0003] Currently, perovskite solar cells using organic-inorganic perovskite compounds as light absorbers are the clos...

Claims

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Application Information

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IPC IPC(8): C01G21/16C01G19/02C03C17/00H01L51/46
CPCC01G19/02C01G21/16C03C17/002C01P2002/34C01P2002/72C01P2004/03C01P2004/01C01P2006/40H10K85/50Y02E10/549H10K30/151H10K85/00C01B9/00C01P2006/22C23C16/08C23C16/18
Inventor 徐章源全男中梁泰烈鲁俊洪金荣灿朴恩映
Owner KOREA RES INST OF CHEM TECH
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