Silicon carbide oxidation method based on microwave plasma

A technology of microwave plasma and oxygen plasma, which is applied in the direction of silicon oxide and silicon dioxide, can solve the problems of low oxidation efficiency, unsatisfactory interface quality, and long oxidation time, so as to reduce carbon residues, reduce electronic defects, and improve Effect of Surface Roughness

Inactive Publication Date: 2018-09-28
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, the oxidation efficiency of this method is low, especially when thicker SiO 2 layer, the oxidation time is longer, SiC and SiO 2 at the interface of SiC and SiO 2 It will still be in a thermodynamic equilibrium state, resulting in unsatisfactory interface quality

Method used

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  • Silicon carbide oxidation method based on microwave plasma
  • Silicon carbide oxidation method based on microwave plasma
  • Silicon carbide oxidation method based on microwave plasma

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Experimental program
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Effect test

Embodiment 1

[0054] The microwave input power of the microwave plasma generating device is set to 1000w, and the adjustable range of the microwave frequency for exciting the microwave plasma is 2.4-2.5GHz. Under the atmosphere of 800mTorr and pure oxygen, the initial temperature of the sample stage is set to 100°C, and the plasma is heated up at a rate of 1.5°C / s until the set microwave plasma oxidation temperature is 800°C, and the plasma discharge time is 800s , carry out plasma oxidation, the thickness of the oxide layer is about 40nm, after the oxidation is completed, change the pure oxygen to pure nitrogen, and cool down in the nitrogen atmosphere.

Embodiment 2

[0056] The microwave input power of the microwave plasma generating device is set to 1500w, and the adjustable range of the microwave frequency for exciting the microwave plasma is 2.4-2.5GHz. In an environment with a pressure of 600mTorr and a volume ratio of oxygen to inert gas of 2:1, set the initial temperature of the sample stage to 200°C, and the plasma will heat up at a rate of 1°C / s until the set microwave plasma oxidation The temperature is 600°C, the plasma discharge time is 600s, and the plasma oxidation is performed. The thickness of the oxide layer is about 20nm. After the oxidation is completed, the pure oxygen is changed to pure nitrogen, and the temperature is cooled in a nitrogen atmosphere.

[0057] Depend on Figure 5 It can be seen that adopting the plasma oxidation process of the present invention forms SiC / SiO 2 The interface is relatively clear, the surface roughness is low, the oxide layer is less damaged, the surface is flat, the oxidation rate of the...

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Abstract

Provided is a silicon carbide oxidation method based on a microwave plasma. The silicon carbide oxidation method comprises the steps that a silicon carbide substrate is provided; the silicon carbide substrate is placed in a microwave plasma generation device; oxygen-containing gas is introduced to generate an oxygen plasma; the oxygen plasma reacts with silicon carbide to generate silicon dioxidewith a preset thickness; the introducing of the oxygen-containing gas is stopped, and reaction is completed; the reaction temperature of the oxygen plasma and silicon carbide is 500-900 DEG C, and thereaction pressure of the oxygen plasma and silicon carbide is 400-1000 millitorrs. The silicon carbide oxidation method based on the microwave plasmas has the advantages that the oxidation efficiencyof the silicon carbide can be significantly improved, the thermodynamic non-equilibrium state can be achieved on interfaces of the silicon carbide and silicon dioxide, and the interface quality is greatly improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for oxidizing silicon carbide based on microwave plasma. Background technique [0002] Silicon carbide (SiC) is the third-generation semiconductor-wide bandgap semiconductor material. It has the advantages of large bandgap width, high critical breakdown field strength, and high thermal conductivity. It is an ideal material for making high-voltage and high-power semiconductor devices. SiC power Electronic devices are at the heart of next-generation high-efficiency power electronics technology. Compared with Si MOSFETs, SiC MOSFETs have smaller on-resistance, higher switching voltage, higher application frequency, and better temperature performance, and are especially suitable for power switching applications. The integrated manufacturing process of SiC MOSFET devices, especially the gate dielectric process, is a current research hotspot. [0003] SiC ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/12
CPCC01B33/12
Inventor 刘新宇汤益丹王盛凯白云杨成樾
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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