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Fluorine tin modified boron-doped diamond film electrode, preparation method and application thereof

A thin-film electrode and electrode technology, which is applied in the field of boron-doped diamond thin-film electrode and its preparation, can solve the problems of covering up the excellent properties of BDD, and achieve the effects of uniform particles, tight combination, and increased conductivity

Active Publication Date: 2018-10-02
SOUTH CHINA INST OF ENVIRONMENTAL SCI MEP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It has been reported in the literature that Co, Au, and polymers are used to modify the surface of BDD, but these modification methods conceal the excellent properties of BDD itself.

Method used

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  • Fluorine tin modified boron-doped diamond film electrode, preparation method and application thereof
  • Fluorine tin modified boron-doped diamond film electrode, preparation method and application thereof
  • Fluorine tin modified boron-doped diamond film electrode, preparation method and application thereof

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Embodiment 1

[0032] This embodiment provides a fluorine tin modified BDD film electrode and a preparation method thereof. The preparation method comprises the following steps:

[0033] (1) Cut the Si sheet into small pieces of 15mm×15mm as the substrate, polish it with sandpaper and boil it for 15 minutes; then grind the silicon substrate with 0.5 μm diamond paste for 10 minutes, and then use acetone, absolute ethanol, deionized Ultrasonic cleaning with water for 5 minutes, and finally drying to obtain a pretreated silicon substrate;

[0034] Put the pre-treated silicon substrate into the 3KPa pressure hot wire vapor deposition chamber, pass hydrogen, methane, and borane into the deposition chamber at a volume ratio of 98:2:0.2, and use tungsten wire as the hot wire. The distance between the wire and the silicon substrate is 8mm, and the temperature of the hot wire is 850°C; adjust the control voltage, increase the current passing through the hot wire, and increase the temperature of the ...

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Abstract

The invention discloses a fluorine tin modified boron-doped diamond film electrode, a preparation method and application thereof. The method comprises the following steps: firstly, preparing a BDD electrode formed by closely accumulating crystal particles, then uniformly mixing and stirring styrene, phenol, polyoxyethylene ether, SnCl2 and NaF, dissolving the mixture with water and ethanol, and adding methenamine, so as to form precursor turbid solution, coating the precursor turbid solution on the surface of the BDD electrode in a spin coating manner, preparing F and SnO2 coating, and finallyperforming calcining at certain temperature, so as to obtain the BDD / SnO2-F electrode. The BDD film electrode is uniform and compact in surface, has high oxygen evolution potential and good corrosionresistance, and is high in electrooxidation capacity; being an anode, the BDD film electrode is good in degradation effect when treating difficulty decomposed organic waste water.

Description

technical field [0001] The invention belongs to the technical field of electrochemical electrode preparation, and in particular relates to a fluorine-tin-modified boron-doped diamond film electrode (BDD electrode) and a preparation method and application thereof. Background technique [0002] In my country, F-53B (Table 1) has been used as a chromium mist inhibitor for 30 years. It has physical and chemical properties such as stability, bioaccumulation, and toxicity, and is a refractory pollutant. [0003] Table 1 Molecular structure of chromium mist inhibitor F-53B [0004] [0005] Electrochemical oxidation technology is easy to operate and has a strong ability to oxidize and degrade persistent organic pollutants. It has been widely used in the treatment of refractory organic dyes and phenol wastewater. Therefore, the use of electrochemical oxidation to treat the refractory pollutant F-53B and the development and screening of efficient, economical, and easy-to-obtain a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C02F1/461C02F101/34C02F101/36C02F101/38
CPCC02F1/46109C02F2001/46142C02F2101/34C02F2101/36C02F2101/38C02F2101/40
Inventor 虢清伟卓琼芳王金宝易皓王丽崔恺张政科邴永鑫常莎胡立才林超导王骥林健聪陈鼎豪陈尧曾圣科杨波
Owner SOUTH CHINA INST OF ENVIRONMENTAL SCI MEP
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