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a bi 4 br 4 preparation method

A direct-top, temperature-controlled technology, applied in the field of preparation of infrared photoelectric detection material Bi4Br4, can solve the problems of unfavorable production and preparation, long growth cycle, easy decomposition, etc., and achieve the effect of easy promotion, less impurity content and safe preparation process

Active Publication Date: 2020-11-13
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although Bi 4 Br 4 In the 1980s, German scientists successfully synthesized single crystals using the method of gas phase transport, but the method they reported was based on Bi and Hg 2 Br 2 as raw material, and Hg 2 Br 2 It is easy to decompose and highly toxic. In addition, this method has a long growth cycle and generally takes several days. Therefore, it is not conducive to the production and preparation in practical applications.

Method used

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Effect test

Embodiment 1

[0024] Step 1. Elemental Bi and BiBr with a purity of 99.99% 3 Mix according to the mass ratio of 10:1, and put the mixed raw materials of the two into the bottom of the quartz tube with one end closed and one end open, and then put 5mm long quartz wool directly above the mixed raw materials; connect the open end of the quartz tube to On the molecular pump unit, use the molecular pump unit to pump the vacuum inside the quartz tube to 10 -3 After Pa, the open end of the quartz tube is closed by the method of oxygen welding and fused quartz tube;

[0025] Step 2. Place the sealed quartz tube vertically in the muffle furnace, and one end of the quartz tube containing the mixed raw materials (that is, the closed end of the quartz tube) is in contact with the bottom end of the muffle furnace; first raise the temperature to 310°C, and keep it warm for 6 hours , then lower the temperature to 271°C at a rate of 1°C / h, and keep it warm for 2h;

[0026] Step 3. After the heat preserva...

Embodiment 2

[0030] Step 1. Elemental Bi and BiBr with a purity of 99.999% 3 Mix according to the mass ratio of 20:1, and put the mixed raw material of the two into the bottom of the quartz tube with one end closed and one end open, and then put 10mm long quartz wool directly above the mixed raw material; connect the open end of the quartz tube to On the molecular pump unit, use the molecular pump unit to pump the vacuum inside the quartz tube to 10 - 5 After Pa, the open end of the quartz tube is closed by the method of oxygen welding and fused quartz tube;

[0031] Step 2. Place the sealed quartz tube vertically in the muffle furnace, and one end of the quartz tube with mixed raw materials (that is, the closed end of the quartz tube) is in contact with the bottom end of the muffle furnace; first raise the temperature to 500°C, and keep it warm for 10 hours , then lower the temperature to 294°C at a rate of 2°C / h, and keep it warm for 5h;

[0032] Step 3. After the heat preservation at...

Embodiment 3

[0036] Step 1. Elemental Bi and BiBr with a purity of 99.5% 3 Mix according to the mass ratio of 15:1, and put the mixed raw material of the two into the bottom of the quartz tube with one end closed and one end open, and then put 7mm long quartz wool directly above the mixed raw material; connect the open end of the quartz tube to On the molecular pump unit, use the molecular pump unit to pump the vacuum inside the quartz tube to 10 -4 After Pa, the open end of the quartz tube is closed by the method of oxygen welding and fused quartz tube;

[0037] Step 2. Place the sealed quartz tube vertically in the muffle furnace, and one end of the quartz tube with mixed raw materials (that is, the closed end of the quartz tube) is in contact with the bottom end of the muffle furnace; first raise the temperature to 420°C, and keep it warm for 8 hours , then lower the temperature to 280°C at a rate of 1.5°C / h, and keep it warm for 4h;

[0038] Step 3. After the heat preservation at 280...

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Abstract

The invention relates to a preparation method of Bi4Br4, and belongs to the technical field of infrared materials. The preparation method comprises the following steps: taking low-toxic and non-volatile elemental Bi and BiBr3 as raw materials, heating for reacting in a sealed vacuum quartz tube, then separating produced Bi4Br4 single crystals from unreacted Bi through centrifugation, and taking out the produced Bi4Br4 single crystals under a protective atmosphere of argon or nitrogen. By the preparation method, the steps are simple, the operation is easy, the technological difficulty is greatly reduced, and popularization is convenient; in addition, a Bi4Br4 single crystal sample prepared through the preparation method provided by the invention has a uniform phase, low impurity content andrelatively high mobility, has relatively strong infrared absorption characteristics and sensitive infrared photoelectric response at a room temperature, and has a very great potential application value in the field of infrared photoelectric detection.

Description

technical field [0001] The present invention specifically relates to a kind of infrared photodetection material Bi 4 Br 4 The preparation method belongs to the technical field of infrared materials. Background technique [0002] Infrared photodetection technology is a focal plane array composed of semiconductor devices represented by mercury cadmium telluride (HgCdTe), including mercury cadmium telluride, indium gallium arsenide, and InAs / InGaSb II type superlattice quantum wells. In the 1950s and 1960s. The bandgap of this system is adjustable in the infrared band, the effective mass of electrons is small, and the intrinsic carrier concentration is low. The detector made of it has the advantages of low noise, high responsivity, short response time and wide response frequency. Semiconductor-like materials have played a crucial role in the development of infrared photodetectors and are still the material system of choice for important strategic and tactical applications. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/62C30B29/12C30B30/00C30B11/02
CPCC30B11/02C30B29/12C30B29/62C30B30/00
Inventor 韩俊峰陈东云肖文德贾爽姚裕贵
Owner BEIJING INSTITUTE OF TECHNOLOGYGY