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Method for growing copper-based multilayered graphene

A multi-layer graphene and copper-based technology, applied in graphene, chemical instruments and methods, inorganic chemistry, etc., can solve problems affecting the number and quality of graphene layers, difficult to obtain and widely used, high price of single crystal copper, etc. Achieve the effect of improving catalytic decomposition efficiency, simple and easy operation, and high multi-layer ratio

Pending Publication Date: 2018-10-26
WUXI HUICHENG GRAPHITE ALKENE TECH APPL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

First of all, the price of single crystal copper is high, it is difficult to obtain and widely used, and secondly, nickel plating on single crystal copper will further increase the cost, and the thickness of nickel plating will affect the number of layers and quality of graphene

Method used

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  • Method for growing copper-based multilayered graphene
  • Method for growing copper-based multilayered graphene
  • Method for growing copper-based multilayered graphene

Examples

Experimental program
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Effect test

Embodiment 1

[0023] A method for growing copper-based multilayer graphene: take a copper foil with a purity of 99.8% and a thickness of 25 microns, put it into a polishing solution, and polish it for 60 seconds at a voltage of 5V. The polished copper foil was taken out, cleaned three times in ethanol and blown dry. Put the treated copper foil into the quartz holder.

[0024] Take another piece of copper foil with a thickness of 18 μm and ultrasonically clean it with ethanol. This copper foil was carefully wrapped around the quartz holder and placed in the center of the atmosphere tube furnace. Argon was passed through the tube furnace for a period of time and then closed. Then pass hydrogen gas into the tube furnace and heat to 800° C. for 120 minutes for annealing. Continue to feed methane, stop heating after 60 minutes, and take out the quartz support after the tube furnace cools down to room temperature. Graphene grown on copper foil was characterized by scanning electron microscopy...

Embodiment 2

[0026] A method for growing copper-based multilayer graphene: take a copper foil with a purity of 99.8% and a thickness of 35 microns, put it into a polishing solution, and polish it for 60 seconds at a voltage of 5V. The polished copper foil was taken out, cleaned three times in ethanol and blown dry. Put the treated copper foil into the quartz holder.

[0027] Take another piece of nickel foil with a thickness of 18 μm and ultrasonically clean it with ethanol. This nickel foil was carefully wrapped around the quartz holder and placed in the center of the atmosphere tube furnace.

[0028] Nitrogen is passed through the tube for a period of time, then closed. Pass hydrogen into the tube and heat to 1100°C for 10 minutes for annealing. Continue to feed ethylene, keep it for 30 minutes, then stop heating, and take out the quartz support after the tube furnace cools down to room temperature. Graphene grown on copper foil was characterized by scanning electron microscopy and R...

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Abstract

The invention discloses a method for growing copper-based multilayered graphene. The method comprises following steps: (1) after pre-treating a copper foil substrate, putting into a bracket; (2) covering the outer surface of the bracket with one layer of metal foil; (3) putting the bracket covered with the metal foil into a vacuum system and carrying out annealing treatment; (4) introducing carbon-containing gas and reacting for 30 to 60 minutes; after cooling, forming the multilayered graphene on the surface of a copper foil. According to the method disclosed by the invention, the copper-based graphene grows by adopting a low-pressure vapor phase deposition method, the safety is good and the growth speed is high; the outer surface of the bracket is covered with one layer of the metal foilso that the catalytic decomposition efficiency of the carbon-containing gas can be improved and the concentration of carbon atoms is increased; meanwhile, the evaporation of the copper foil substrateis inhibited and the multilayered graphene is easy to form. The method disclosed by the invention is simple and easy to operate; the outer-layer coated metal foil can be repeatedly utilized and additional energy consumption is not increased; the high-quality and high-multilayer-rate graphene can be formed.

Description

technical field [0001] The invention relates to the field of graphene film growth and preparation, in particular to a method for growing multilayer graphene on metal copper foil. Background technique [0002] Graphene refers to a single-layer two-dimensional crystal in which carbon atoms are arranged in a honeycomb crystal lattice with sp2 hybrid orbitals. The global market for graphene has continued to grow in recent years and is expected to surpass all current nanomaterials, especially in consumer electronics and energy storage applications. [0003] At present, the chemical vapor deposition (CVD) method is widely used in the preparation of graphene thin films, which has the advantages of simplicity, easy operation, large size and easy transfer to other substrates. Using polycrystalline copper foil as a catalyst, graphene grown at a high temperature above 1000°C has the characteristics of low resistivity and fast electron migration. However, despite its high mobility, it...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/186
CPCC01B32/186C01B2204/04
Inventor 黄孟琼李璐屈晓兰
Owner WUXI HUICHENG GRAPHITE ALKENE TECH APPL CO LTD
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