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A kind of preparation method of resistive diamond-like carbon base film material

A thin-film material, diamond technology, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problems of specific technical measures and means of surface resistivity of diamond-like carbon-based thin films, etc., and achieve good results. Application prospect and value, good thickness uniformity, strong film-base bonding effect

Active Publication Date: 2020-01-14
LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, no specific technical measures and means for controlling the surface resistivity of diamond-like carbon-based films have been found in the existing literature and patent searches.

Method used

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  • A kind of preparation method of resistive diamond-like carbon base film material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] In this embodiment, a resistive diamond-like carbon-based thin film material with a surface resistivity of 10±2 MΩ / □ was prepared on a polyimide film substrate, and the uniformity was good.

[0024] Specifically include the following steps:

[0025] Step 1. The surface of the high-purity graphite target is sputtered and cleaned.

[0026] The vacuum degree of the background in the pre-evacuation chamber is 1×10 -5 Below Torr, turn on the pulsed DC power supply, apply a bias voltage of -500~-50 V gradient, and apply a current of 3.0 A on the high-purity graphite target with a strong magnetic field, and feed a high-purity argon gas with a flow rate of 18 sccm. The surface of the high-purity graphite target is cleaned by sputtering with ionized argon ions for 35 minutes.

[0027] Step 2, cleaning and drying the surface of the substrate to be plated.

[0028] Take a polyimide film material with a size of 150 mm×150 mm, wipe and clean its surface with absolute ethanol, pl...

Embodiment 2

[0035] In this embodiment, a resistive diamond-like carbon-based film material with a surface resistivity of 50±10 MΩ / □ was prepared on a polyimide film substrate, and the uniformity was good.

[0036] Specifically include the following steps:

[0037] Step 1. The surface of the high-purity graphite target is sputtered and cleaned.

[0038] Same as Step 1 in Example 1.

[0039] Step 2, cleaning and drying the surface of the substrate to be plated.

[0040]Same as Step 2 in Example 1.

[0041] Step 3, plasma bombardment activation and etching on the surface of the substrate to be plated.

[0042] Same as Step 3 in Example 1.

[0043] Step 4, preparing a resistive diamond-like carbon-based thin film material with a surface resistivity of 50±10 MΩ / □.

[0044] Keep the working air pressure at 6×10 -4 Torr, the rotation speed of the sample holder is 10 rpm, the applied substrate bias is -30 V, the target current is 2.0 A, after sputtering deposition for 20 minutes, it is coo...

Embodiment 3

[0047] In this embodiment, a resistive diamond-like carbon-based thin film material with a surface resistivity of 80±10 MΩ / □ was prepared on a polyimide film substrate, and the uniformity was good.

[0048] Specifically include the following steps:

[0049] Step 1. The surface of the high-purity graphite target is sputtered and cleaned.

[0050] Same as step 1 in examples 1 and 2.

[0051] Step 2, cleaning and drying the surface of the substrate to be plated.

[0052] Same as step 2 in examples 1 and 2.

[0053] Step 3, plasma bombardment activation and etching on the surface of the substrate to be plated.

[0054] Same as step 3 in examples 1 and 2.

[0055] Step 4, preparing a resistive diamond-like carbon-based thin film material with a surface resistivity of about 80±10 MΩ / □.

[0056] Keep the working air pressure at 6×10 -4 Torr, the rotation speed of the sample holder was 10 rpm, the applied substrate bias was -30 V, and the target current was set to 1.6 A. After ...

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Abstract

The invention discloses a preparation method of a resistive diamond-like carbon-based thin-film material. The method is suitable for preparing the diamond-like carbon-based thin-film material sequentially through high energy plasma bombardment, etching and sputtering of a high-purity graphite target on the surface of a micro-structure gas detector electrode substrate by means of a non-equilibriumdirect-current magneto-sputtering deposition technology. By means of the method, the diamond-like carbon-based thin-film material which is good in thickness uniformity and high in film base binding force can be prepared, and meanwhile the surface resistivity of a diamond-like carbon-based thin film can be regulated and controlled. The resistive diamond-like carbon-based thin-film material preparedthrough the method is suitably used for manufacturing a resistive electrode of a micro-structure gas detector and is excellent in application prospect and value.

Description

technical field [0001] The invention relates to a method for preparing a resistive diamond-like carbon-based film material, in particular to a method for preparing a resistive diamond-like carbon-based film material on the surface of a microstructured gas detector electrode substrate, and belongs to the technical fields of surface processing and film materials. Background technique [0002] In the current large-scale nuclear and particle physics experiments, microstructured gas detectors are easy to process into various shapes due to their good position resolution, high counting rate capability, stable operation, and strong radiation resistance. Processing and other characteristics, has been widely used. However, as the experimental requirements become higher and higher, and the application environment becomes more and more harsh, the sparking phenomenon of many microstructure gas detectors occurs more and more frequently during the working process. The discharge generated ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/35C23C14/02
CPCC23C14/021C23C14/022C23C14/0605C23C14/35
Inventor 尚伦霖周意吕游张广安鲁志斌刘建北
Owner LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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