Silicon nitride crucible and preparation method thereof

A silicon nitride crucible and crucible technology, which is applied in the field of photovoltaic and semiconductor device production, can solve the problems of limited single service life, can not be reused, cell attenuation, etc., achieve long service life, avoid the diffusion and introduction of oxygen , the effect of long service life

Pending Publication Date: 2018-11-06
王金波
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Quartz ceramic crucibles have the following fatal weaknesses: 1) Softening and crystallization at high temperatures are prone to safety accidents such as Si leakage due to cracking of the crucible; The service life of conventional Si polycrystalline quartz crucible is about 3 days, and the service life of conventional Si single crystal quartz crucible is less than 200 hours. The limit of the current technological level is less than 400 hours, which cannot meet the needs of CCZ single crystal in the future; 3) In Si material Oxygen is introduced into the medium, which leads to quality problems such as cell attenuation

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A silicon nitride crucible comprising the following raw materials: powder, barium-containing compound, SiO 2 , dispersant, monomer, cross-linking agent, initiator, catalyst, polymerization inhibitor, high-purity deionized water; wherein, the powder is Si powder with a purity of 6N grade; the dispersant is ammonium citrate; The monomer is acrylamide; the crosslinking agent is N,N'-methylene acrylamide; the initiator is ammonium persulfate, the catalyst is lactic acid, and the polymerization inhibitor is p-hydroxyanisole .

[0022] In this embodiment, the preparation method of the silicon nitride crucible is a method of preparing a silicon nitride crucible by sintering after reaction, and the specific steps are as follows:

[0023] 1) Weigh the powder and deionized water to prepare a slurry through ball milling and stirring, and add barium-containing compounds, SiO 2 , add 1% ammonium citrate relative to high-purity deionized water, add 5% acrylamide relative to high-pu...

Embodiment 2

[0028] A silicon nitride crucible, comprising the following raw materials in parts by weight: powder, barium-containing compound, silicon dioxide, aluminum oxide, binder, high-purity deionized water; wherein, the powder is Si with a purity of 5N 3 N 4 ; The binder is polyvinyl alcohol.

[0029] In this embodiment, the preparation method of the silicon nitride crucible is a method for preparing a silicon nitride crucible by high temperature pressure sintering, and the steps are as follows:

[0030] 1) Weigh the powder and add it to an appropriate amount of high-purity deionized water to prepare a slurry through ball milling and stirring. During the preparation of the slurry, add 1% polyvinyl alcohol relative to the high-purity deionized water to obtain a mass solid content of 65wt % slurry; then pour the slurry into the mold, place it at 30°C, and let it stand for 24 hours under the condition of 45% to 55% humidity, and then dry it at 110°C to obtain the green body; wherein, t...

Embodiment 3

[0034] A silicon nitride crucible comprising the following raw materials: powder, barium-containing compound, SiO 2 , mullite, monomer, cross-linking agent, initiator, high-purity deionized water; wherein, the powder is Si with a purity of 3N grade 3 N 4 ; the monomer is acrylamide; the cross-linking agent is N, N'-methylene acrylamide; the initiator is azobisisobutylamidine hydrochloride.

[0035] In this embodiment, the preparation method of the silicon nitride crucible is a method for preparing a silicon nitride crucible by high temperature pressure sintering, and the steps are as follows:

[0036] 1) Weigh the powder and deionized water to prepare a slurry through ball milling and stirring, and add barium-containing compounds, SiO 2 , add 10% acrylamide relative to high-purity deionized water, add 5% crosslinking agent relative to acrylamide, add 1% initiator relative to acrylamide, and obtain a slurry with a mass solid phase content of 60wt% material; then pour the slu...

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PUM

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Abstract

The invention discloses a silicon nitride crucible which is prepared from one or more of the following raw materials of powder, a barium-containing compound, SiO2, aluminum oxide, mullite, a dispersant, high-purity deionized water, an organic matter monomer, a cross-linking agent, an initiator, a catalyst, a polymerization inhibitor and an adhesive. The invention discloses a method of preparing the silicon nitride crucible with sintering after reaction. The method comprises the following steps of 1) preparing an Si-based green body with a gel casting method or a slip casting method; 2) performing nitridation at 1000-1500 DEG C; 3) performing high-temperature gas pressure sintering; and 4) performing post-treatment. The invention also discloses a method for preparing the silicon nitride crucible with high-temperature gas pressure sintering. The method comprises the following steps of 1) preparing an Si3N4-based green body with the gel casting method or the slip casting method; and 2) performing high-temperature gas pressure sintering. The prepared silicon nitride crucible has the advantages of high-temperature resistance, low oxygen content, long service life and capability of repeated use for a long time and has a wide market prospect.

Description

technical field [0001] The invention relates to the technical field of photovoltaic and semiconductor device production, in particular to a silicon nitride crucible and a preparation method thereof. Background technique [0002] At present, more than 95% of semiconductor devices and more than 99% of integrated circuits are made of Si materials, and more than 95% of photovoltaic power plants are made of Si cells. Si materials are divided into two types: polycrystalline and single crystal. At present, a circular quartz crucible is used to prepare Si single crystal, and a square quartz ceramic crucible is used to prepare Si polycrystalline. Quartz ceramic crucibles have the following fatal weaknesses: 1) Softening and crystallization at high temperatures are prone to safety accidents such as Si leakage due to cracking of the crucible; The service life of conventional Si polycrystalline quartz crucible is about 3 days, and the service life of conventional Si single crystal quar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/591C04B35/593
CPCC04B35/591C04B35/5935C04B2235/3217C04B2235/3418C04B2235/3463C04B2235/428
Inventor 王金波姜华
Owner 王金波
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