Silicon nitride crucible and preparation method thereof

Abstract

The invention discloses a silicon nitride crucible which is prepared from one or more of the following raw materials of powder, a barium-containing compound, SiO2, aluminum oxide, mullite, a dispersant, high-purity deionized water, an organic matter monomer, a cross-linking agent, an initiator, a catalyst, a polymerization inhibitor and an adhesive. The invention discloses a method of preparing the silicon nitride crucible with sintering after reaction. The method comprises the following steps of 1) preparing an Si-based green body with a gel casting method or a slip casting method; 2) performing nitridation at 1000-1500 DEG C; 3) performing high-temperature gas pressure sintering; and 4) performing post-treatment. The invention also discloses a method for preparing the silicon nitride crucible with high-temperature gas pressure sintering. The method comprises the following steps of 1) preparing an Si3N4-based green body with the gel casting method or the slip casting method; and 2) performing high-temperature gas pressure sintering. The prepared silicon nitride crucible has the advantages of high-temperature resistance, low oxygen content, long service life and capability of repeated use for a long time and has a wide market prospect.

Description

technical field

[0001] The invention relates to the technical field of photovoltaic and semiconductor device production, in particular to a silicon nitride crucible and a preparation method thereof. Background technique

[0002] At present, more than 95% of semiconductor devices and more than 99% of integrated circuits are made of Si materials, and more than 95% of photovoltaic power plants are made of Si cells. Si materials are divided into two types: polycrystalline and single crystal. At present, a circular quartz crucible is used to prepare Si single crystal, and a square quartz ceramic crucible is used to prepare Si polycrystalline. Quartz ceramic crucibles have the following fatal weaknesses: 1) Softening and crystallization at high temperatures are prone to safety accidents such as Si leakage due to cracking of the crucible; The service life of conventional Si polycrystalline quartz crucible is about 3 days, and the service life of conventional Si single crystal quar...