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A/m/x material production process with alkylamine

A technology of alkylamine and alkyl, which is applied in the field of manufacturing semiconductor devices, can solve the problems of non-reproducibility of device performance, problems of air purification units, and toxic solvents, etc., to improve electronic and optical properties, easy to handle, and reduce the number of pinholes Effect

Active Publication Date: 2018-11-09
OXFORD UNIV INNOVATION LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the perovskite layer is deposited, this can lead to two problems: (i) in the worst case, the electron-selective contact is almost completely washed away; or (ii) in the best case, pinholes form, thereby shunting the flow. road
Even if the partial wash-out of electron-selective contacts is very small, this poses another problem: the non-reproducibility of device performance due to the constant variation in both thickness and uniformity of the n-type acceptor.
These solvents are known to be toxic and correspondingly difficult to handle
Finally, these solvents pose problems for atmospheric cleaning units and are therefore difficult to use in manufacturing

Method used

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  • A/m/x material production process with alkylamine
  • A/m/x material production process with alkylamine
  • A/m/x material production process with alkylamine

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0273] Example 1-ACN / Methylamine

[0274] Immediate differences were observed for films spin-coated from DMF after spin-coating the above-mentioned ACN / methylamine solution. This is the perovskite form on the spin coater. MAPbI was not previously observed unless quenched with a solvent 3 (Methylamine lead triiodide) perovskite deposition. After the film was removed from the spin coater, the film was observed to be dense, continuous and specular. Therefore, from 0.5M MAPbI dissolved in ACN / MA solvent mixture 3 Solution spin-coated MAPbI 3 The film was visually very smooth and mirror-like and free from defects. Scanning electron microscope (SEM) images of the membrane cross section in figure 1 shown in . Surprisingly, large crystals up to 3 microns in size were observed when studying the high-magnification SEM images. This makes this method of producing films superior to other methods of inducing rapid crystallization, such as solvent quenching or utilizing lead acetate ...

Embodiment 2

[0282] Example 2 - Other Alkylamines

[0283] In view of the results obtained with methylamine, similar experiments were performed using the addition of propylamine, butylamine or pentylamine. In all cases, it was observed that the presence of alkylamines improved the dissolution of precursor compounds in ACN, with similar mixed solvent precursor solutions formed with these amines.

[0284] Spin coat the ACN / alkylamine precursor solution to form a thin film. observed that dissolution of precursors using longer-chain alkylamines resulted in the formation of layered perovskite structures ABX 4 . This suggests that the alkylamines used for solvation are also included in the perovskite structure. It should be noted that when pure liquid amine is used, only about 90 microliters of amine are needed to completely dissolve the precursor powder in 2 ml of ACN. However, for comparison purposes, the final molarity of the solutions used was constant.

[0285] Different combinations o...

Embodiment 3

[0287] Example 3-ACN / Methylamine

[0288] Materials and Methods

[0289] solvent preparation

[0290] Acetonitrile / methylamine (ACN / MA) co-solvents can be prepared in various ways. In this example, two different methods of adding methylamine to ACN are described. To study the films and devices, a solution of MA in ethanol (Sigma Aldrich, 33 wt%) was placed in an aerator, which was kept in an ice bath. Then the carrier gas N 2 The MA solution was degassed by bubbling through the solution. The resulting MA gas was then passed through a drying tube filled with desiccant (Drietire and CaO), which was then bubbled directly to a concentration of 0.5M perovskite precursor (1MAI:1.06M PbI 2 ) in ACN (Sigma Aldrich). Gas was bubbled into the black dispersion until the perovskite particles were completely dissolved, resulting in a clear pale yellow solution.

[0291] After all the particles in solution had dissolved, the vial was sealed with a septum cap and stored at 5°C until n...

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Abstract

The present invention relates to a process for producing a layer of crystalline A / M / X material. The process comprises disposing on a substrate a precursor composition comprising: (a) a first precursorcompound comprising a first cation (M), which first cation is a metal or metalloid cation; and (b) a solvent, wherein the solvent comprises; (i) acetonitrile, propionitrile, acetone or a mixture thereof; and (ii) an alkylamine. The invention also relates to a composition comprising: (i) a compound of formula MXn, (ii) a compound of formula AX, (iii) acetonitrile, propionitrile, acetone or a mixture thereof; and (iv) an alkylamine of formula RANH2, wherein RA is a C1-8 alkyl group.

Description

technical field [0001] The present invention relates to a method for manufacturing a layer of crystalline A / M / X material. The invention also relates to a method of manufacturing a semiconductor device. The invention also describes compositions useful for the methods of the invention. Background technique [0002] When perovskite solar cells were first reported in 2009, the power conversion efficiency was 3%. By 2012, the power conversion efficiencies of perovskite photovoltaic devices reached 9.2% and 10.9%. Since then, there has been increasing research in the field of perovskite photovoltaics and photovoltaic devices based on other A / M / X materials that show promise to completely change the energy landscape. Perovskite-based photovoltaic devices have achieved certified efficiencies of 21%. [0003] Apart from the obvious advantage of high power conversion efficiency, one of the most attractive features of A / M / X materials is the relative simplicity with which high-qualit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/368H01L51/00H01L51/42H10K99/00
CPCH01L21/02521H01L21/02628Y02E10/549Y02P70/50H10K85/50H10K30/10H10K30/50H10K30/151H10K85/6565H10K30/00H10K71/15
Inventor 亨利·詹姆斯·施耐德帕比塔·纳亚克伯纳德·威戈纳基塔·诺埃尔塞维林·哈比斯如汀格尔戴维·莫尔
Owner OXFORD UNIV INNOVATION LTD
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