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A method to suppress dark current in perovskite detectors

A perovskite and detector technology, applied in the field of suppressing the dark current of perovskite detectors, can solve the problems of high dark current and low sensitivity, and achieve the effects of improving sensitivity, reducing detection limit, and suppressing dark current.

Active Publication Date: 2019-12-20
HUAZHONG UNIV OF SCI & TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above defects or improvement needs of the prior art, the object of the present invention is to provide a method for suppressing the dark current of a perovskite detector, wherein by controlling the type of doping elements, especially by adjusting the concentration of doping elements, to The active layer material perovskite is doped with trace amounts of high-valent cations, which can effectively solve the problems of high dark current and low sensitivity of perovskite detectors in the prior art, as well as sensitivity, working bias, stability and environmental pollution. and other indicators can not be taken into account, to obtain high-performance, stable semiconductor detectors

Method used

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Examples

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Embodiment example 1

[0028] This example will introduce that the molar ratio of doped atoms is 10 -5 Bi 3+ Enter MAPbBr 3 Preparation of single crystals.

[0029] Take (0.089g) bismuth bromide (BiBr 3 ) powder, add the powder to 10ml organic solvent DMF, dilute the resulting solution once, dilute 10 times, take 35uL diluted solution and add 10ml of 0.7Mol / L MAPbBr 3 In the precursor solution, the solution is stored in a polytetrafluoroethylene beaker, covered with tin foil, poked three small holes with the needle tip of the syringe, placed on a hot stage at 70 degrees, and evaporated to crystallize the solvent. After about 12 hours, take out the growth For a single crystal, use thermal evaporation to vaporize a 100nm thick gold electrode on the upper and lower surfaces of the single crystal.

[0030] In this embodiment, the molar ratio of doped atoms is 10 -5 BiBr 3 Enter MAPbBr 3 Precursor solution, single crystal growth by solvent evaporation method, and preparation of detectors (such as ...

Embodiment example 2

[0032] This example will introduce that the molar ratio of doped atoms is 10 -9 Sb 3+ Enter MAPbI 3 Preparation of single crystals.

[0033] Take (0.072g) antimony bromide (SbBr 3 ) powder, the powder was added to 10ml organic solvent DMF, and the resulting solution was diluted three times, the first two dilutions were 100 times each time, and the last dilution was 10 times. Take 50uL of the diluted solution and add 10ml of 1Mol / L MAPbI 3 In the precursor solution, the solution was stored in a polytetrafluoroethylene beaker, covered with tin foil, put into a beaker with 10ml of hexane, and crystallized with an anti-solvent. After about 12 hours, the single crystal grown in it was taken out, and heated Evaporate 100nm thick gold electrodes on the upper and lower surfaces of the single crystal.

[0034] In this embodiment, the molar ratio of doped atoms is 10 -9 SbBr 3 Enter MAPbI 3 Precursor solution, grow single crystal by anti-solvent method, and prepare detector.

Embodiment example 3

[0036] This example will introduce that the molar ratio of doped atoms is 10 -10 Bi 3+ Enter CsPbBr 3 Preparation of single crystals.

[0037] Take (0.089g) bismuth bromide (BiBr 3 ) powder, add the powder into 10ml organic solvent DMSO, dilute the obtained solution four times, the first three dilutions are 100 times each time, and the last dilution is 10 times, take 90uL of the diluted solution and add 1.5ml of 1.2Mol / L CbBr 3 In the precursor solution, the solution is packed in a small bottle, put it into a 60-degree oil bath, raise the temperature to 100 degrees at a rate of 5 degrees Celsius per minute, keep it warm for 3 hours, and then raise the temperature to 120 degrees at a rate of 5 degrees Celsius per minute, and take it out The single crystal was rinsed with hot DMSO, dried in a vacuum at 100°C for 1 hour, and a 100nm-thick gold electrode was evaporated on the upper and lower surfaces of the single crystal by thermal evaporation.

[0038] In this embodiment, b...

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Abstract

The invention discloses a method for suppressing the dark current of a perovskite detector, the method is by doping a trace amount of high-valent cations into the perovskite material, and the valence state of the high-valent cations is higher than that of the perovskite ABX 3 The valence state of the B-site elements in the structure, the atomic ratio of these high-valent cations to the B-site elements contained in the perovskite material is not higher than 10 ‑5 : 1, thereby reducing the carrier concentration of the perovskite material and reducing the dark current of a detector using the perovskite material as an active material. The present invention can effectively solve the problems existing in perovskite detectors in the prior art by controlling the type of doping elements, especially by adjusting the concentration of doping elements, and doping trace amounts of high-valent cations into the perovskite active layer material. The problem of high dark current and low sensitivity is solved, and the problems of sensitivity, working bias voltage, stability and environmental pollution cannot be taken into account, and a high-performance and stable semiconductor detector is obtained.

Description

technical field [0001] The invention belongs to the field of detectors, especially the technical field of detectors made of semiconductor materials, and more specifically relates to a method for suppressing the dark current of a perovskite detector, which can suppress the dark current of a perovskite detector and can Applied in semiconductor ray imaging detectors, etc., it can improve the sensitivity of perovskite detectors and reduce the minimum detection dose. At the same time, the method also involves the preparation of corresponding active layer materials. Background technique [0002] Perovskite materials have the advantages of high extinction coefficient, wide absorption range, long exciton diffusion length, and solution processing, which make them very suitable for making related detectors. There are two main categories of perovskite detectors: high-energy ray detectors and photodetectors. High-energy ray detectors are the most important part of radiography systems, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/46H01L51/42H01L51/48
CPCH10K71/12H10K30/30H10K2102/00Y02E10/549
Inventor 唐江牛广达刘念巫皓迪尹力骁潘伟程杜鑫源杨波李鹏骅
Owner HUAZHONG UNIV OF SCI & TECH