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Superlattice structure and delta doping-based efficient light-emitting diode and preparation method

A light-emitting diode and superlattice technology, applied in the field of microelectronics, can solve the problems of low ionization rate, low luminous efficiency of LED, and difficulty, and achieve the effect of improving ionization rate and improving luminous efficiency.

Inactive Publication Date: 2018-11-23
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this method, due to the low ionization rate of Mg in p-type GaN, the hole carrier concentration is low, and it is difficult to complete the efficient recombination process in the quantum well, so the LED luminous efficiency obtained is low.

Method used

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  • Superlattice structure and delta doping-based efficient light-emitting diode and preparation method
  • Superlattice structure and delta doping-based efficient light-emitting diode and preparation method

Examples

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Effect test

Embodiment 1

[0029] Example 1, preparing a deep ultraviolet light-emitting diode with an emission wavelength of 270nm.

[0030] In step one, the substrate is pretreated.

[0031] 1a) After cleaning the c-plane sapphire substrate, place it in the metal organic chemical vapor deposition MOCVD reaction chamber, and reduce the vacuum degree of the reaction chamber to 2×10 -2 Torr: Introduce hydrogen gas into the reaction chamber, and under the condition that the pressure of the MOCVD reaction chamber reaches 20 Torr, heat the substrate to a temperature of 900°C and keep it for 10 minutes to complete the heat treatment of the substrate;

[0032] 1b) The heat-treated substrate is placed in a reaction chamber at a temperature of 1000° C., and ammonia gas with a flow rate of 3500 sccm is passed in for 5 minutes to carry out nitriding to complete the nitriding.

[0033] Step 2, using the MOCVD process to grow a high-temperature AlN layer, such as figure 2 (a).

[0034] Adjust the temperature of...

Embodiment 2

[0047] Example 2, preparing a deep ultraviolet light-emitting diode with an emission wavelength of 290nm

[0048] Step 1, pretreating the substrate.

[0049] 1.1) Place the cleaned c-plane sapphire substrate in the metal organic chemical vapor deposition MOCVD reaction chamber, and reduce the vacuum degree of the reaction chamber to 2×10 -2 Torr: Introduce hydrogen gas into the reaction chamber, and under the condition that the pressure of the MOCVD reaction chamber reaches 760 Torr, the substrate is heated to a temperature of 1200° C. and kept for 5 minutes to complete the heat treatment of the substrate.

[0050] 1.2 Place the heat-treated substrate in a reaction chamber at a temperature of 1100° C., pass through ammonia gas with a flow rate of 3800 sccm, and carry out nitriding for 3 minutes to complete nitriding.

[0051] Step 2, using the MOCVD process to grow a high-temperature AlN layer, such as figure 2 (a).

[0052] Adjust the temperature of the reaction chamber t...

Embodiment 3

[0065] Example 3, preparing an ultraviolet light-emitting diode with an emission wavelength of 330 nm.

[0066] Step A, pretreating the substrate.

[0067] After the c-plane sapphire substrate was cleaned, it was placed in the metal organic chemical vapor deposition MOCVD reaction chamber, and the vacuum degree of the reaction chamber was reduced to 2×10 -2 Torr: Introduce hydrogen gas into the reaction chamber, and under the condition that the pressure of the MOCVD reaction chamber reaches 400 Torr, heat the substrate to a temperature of 1000°C and keep it for 8 minutes to complete the heat treatment of the substrate substrate; then heat-treated the substrate Place in a reaction chamber with a temperature of 1080° C., pass through ammonia gas with a flow rate of 3500 sccm, and carry out nitriding for 4 minutes to complete nitriding.

[0068] In step B, a high-temperature AlN layer is grown by MOCVD process.

[0069] Adjust the temperature of the reaction chamber to 1000°C, ...

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Abstract

The invention discloses a superlattice structure and delta doping-based efficient light-emitting diode and a preparation method thereof and mainly aims at solving the problem of low efficiency of thelight-emitting diode due to low ionization rate of Mg in an existing p-type region. The superlattice structure and delta doping-based efficient light-emitting diode comprises a c-plane sapphire substrate (1), a high-temperature AlN nucleating layer (2), an n-type GaN layer (3), an Al<x>Ga<1-x>N / Al<y>Ga<1-y>N multi-quantum well (4), an electron blocking layer (5) and a p-type layer (6) from bottomto top, wherein the p-type layer comprises three layers; an upper layer and a lower layer are a GaN material which is evenly doped with Mg; and a middle layer is a delta-doped GaN / AlGaN superlattice structure material. According to the efficient light-emitting diode and the preparation method thereof, the ionization rate of the Mg in the p-type layer is increased, the light-emitting efficiency isimproved and the efficient light-emitting diode can be applied to water purification, biological preparation detection, sterilization and medicine equipment.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a high-efficiency light-emitting diode, which can be used in water purification, biological agent detection, sterilization and medical equipment. technical background [0002] Wide bandgap III-nitrides are important semiconductor materials for the fabrication of high-power light-emitting diodes and laser diodes in the green to ultraviolet spectral range. Among them, the AlGaN alloy whose spectrum can be as short as 200nm is an important material for ultraviolet and deep ultraviolet optoelectronic devices, and can be widely used in water purification, biological agent detection, sterilization, medicine, etc. [0003] Although great progress has been made in the fabrication of AlGaN materials, how to improve the hole conductivity in AlGaN is still a great challenge. One of the main reasons for the low hole conductivity is the low ionization rate of Mg. Therefo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/04H01L33/06H01L33/32H01L33/00
CPCH01L33/04H01L33/007H01L33/06H01L33/325
Inventor 许晟瑞范晓萌王学炜郝跃张进成马晓华毕臻艾丽霞
Owner XIDIAN UNIV