LED substrate with patterned insulating layer and its preparation method and application
A technology of LED substrate and insulating layer, which is applied in conductive pattern formation, printed circuit, circuit thermal device, etc., can solve the problems of complicated process flow, unenvironmental protection of conductive layer, complicated preparation process of insulating layer, etc. Low pollution, good for heat dissipation
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Embodiment 1
[0067] prepared as figure 1 The LED substrate shown: Prepare a rectangular aluminum plate with a size of 10cm×20cm as the metal layer 1, clean the aluminum plate with deionized water, and then place the aluminum plate in an anodic oxidation pool containing oxalic acid solution (concentration: 0.2mol / L) Anodizing treatment was performed in a constant temperature bath at 10° C. for 240 minutes to form an oxide layer 2 with a thickness of 20 μm.
[0068] 5 g of a mixture containing 60% by weight of phosphorus oxide, 20% by weight of boron oxide, and 20% by weight of silicon oxide were passed through the screen using a screen plate having a hole pattern at a position corresponding to the center of the chip, with a screen The insulating layer material was printed by a printing method, then put into a muffle furnace, and heated at 500° C. for 40 minutes to form a patterned insulating layer 3 with a thickness of 100 μm.
[0069] 4g of a mixture containing 75% by weight of micron sil...
Embodiment 2
[0073] prepared as figure 1 The LED substrate shown: Prepare a rectangular aluminum alloy plate with a size of 10cm×20cm as the metal layer 1, polish the aluminum alloy plate, and then place the aluminum alloy plate in a place containing Na 3 PO 4 / NaOH electrolyte (concentration of 10.0 / 2.0g / L) for micro-arc oxidation treatment in a temperature-controlled micro-arc oxidation tank, at a current density of 10.5A / dm 2 for 30 minutes to form an oxide layer 2 with a thickness of 15 μm.
[0074] 7.5 g of a mixture containing 60% by weight of phosphorus oxide, 30% by weight of alum oxide, and 10% by weight of barium oxide were passed through the use of a screen with a hole pattern at a position corresponding to the center of the chip. The material of the insulating layer was printed by screen printing, then put into a muffle furnace, and heated at 450° C. for 25 minutes to form a patterned insulating layer 3 with a thickness of 150 μm.
[0075] With 5g, the mixture containing 10%...
Embodiment 3
[0079]prepared as figure 1 The LED substrate shown: Prepare a rectangular aluminum plate with a size of 10cm×20cm as the metal layer 1, clean the aluminum plate with ethanol solvent, and then place the aluminum plate in a place containing Na 3 PO 4 / NaOH electrolyte (concentration of 10.0 / 2.0g / L) for micro-arc oxidation treatment in a temperature-controlled micro-arc oxidation tank device, at a current density of 10.5A / dm 2 for 90 minutes to form an oxide layer 2 with a thickness of 35 μm.
[0080] 2.5 g of a mixture containing 55% by weight of boron oxide, 25% by weight of barium oxide and 20% by weight of zinc oxide were passed through the use of a screen with a hole pattern at a position corresponding to the center of the chip, with a wire The material of the insulating layer was printed by screen printing, and then put into a muffle furnace and heated at 570° C. for 35 minutes to form a patterned insulating layer 3 with a thickness of 50 μm.
[0081] A mixture of 2.5g c...
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