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Silicon-rich SiOx-C material and preparation method and application thereof

A silicon-rich and silicon source technology, applied in the field of silicon-rich SiOx-C materials and their preparation, can solve the problems of low first-efficiency of SiO materials, and achieve the effects of easy control, large-scale production, and simple process steps

Active Publication Date: 2018-11-30
HEFEI GUOXUAN HIGH TECH POWER ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Silicon-rich SiO prepared by the preparation method of the present invention x The gram capacity and first coulombic efficiency of -C materials are higher than those of commercial SiO, and the cycle stability is relatively good, which overcomes the defect of low first efficiency of SiO materials

Method used

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  • Silicon-rich SiOx-C material and preparation method and application thereof
  • Silicon-rich SiOx-C material and preparation method and application thereof
  • Silicon-rich SiOx-C material and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Put 10g of SiO in a porcelain boat, then place it in a tube furnace in an argon protective atmosphere, raise the temperature of the tube furnace to 900 °C at a heating rate of 5 °C / min, keep it warm for 2 hours, and take out the prepared SiO after cooling down x . SiO x Mix with 40% HF aqueous solution at a mass ratio of 2:1, soak for 0.5h, then filter, wash with deionized water for 3 times until the washing liquid is neutral, and then place it in a vacuum-dried vacuum with a vacuum degree of -0.8MPa The porous silicon-based material was prepared by drying at 80°C in an oven. Take 5g of porous silicon-based material and place it in a CVD furnace, pass in argon gas to exhaust the air in the CVD furnace, then pass in silane gas, the gas flow rate is 4mL / min, and the temperature of the tube furnace is raised to 600°C, keep warm for 2 hours, stop feeding silane, then raise the temperature of the tube furnace to 800°C, feed acetylene gas, the gas flow rate is 4mL / min, keep...

Embodiment 2

[0034] Put 10g of SiO in a porcelain boat, then place it in a tube furnace in a nitrogen protective atmosphere, raise the temperature of the tube furnace to 900°C at a heating rate of 5°C / min, keep it warm for 12h, and take out the prepared SiO after cooling down x . SiO x Mix with 35% HF aqueous solution at a mass ratio of 1:2, soak for 2 hours, then filter, wash with deionized water for 3 times until the washing liquid is neutral, and then place it in a vacuum drying oven with a vacuum degree of -1MPa , and dried at 80°C to prepare a porous silicon-based material. Take 5 g of porous silicon-based materials and place them in a CVD furnace, blow in nitrogen gas to exhaust the air in the CVD furnace, and then pass in silane gas with a gas flow rate of 1 mL / min, and raise the temperature of the tube furnace to 600 °C at a heating rate of 5 °C / min. ℃, keep warm for 12h, stop feeding silane gas, raise the temperature of the tube furnace to 700°C, feed acetylene gas, the gas flow...

Embodiment 3

[0036] Put 10g of SiO in a porcelain boat, then place it in a tube furnace in a nitrogen protective atmosphere, raise the temperature of the tube furnace to 1200 °C at a heating rate of 5 °C / min, keep it for 2 hours, and take out the prepared SiO after cooling down x . SiO x Mix with HF aqueous solution with a mass fraction of 44% at a mass ratio of 2:1, soak for 0.5h, then filter, wash with deionized water for 3 times until the washing liquid is neutral, and then place it in a vacuum-dried vacuum with a vacuum degree of -0.8MPa The porous silicon-based material was prepared by drying at 100°C in an oven. Take 5 g of porous silicon-based materials and place them in a CVD furnace, blow in nitrogen gas to exhaust the air in the CVD furnace, then pass in a mixed gas of dichlorosilane and silane, the gas flow rate is 4 mL / min, and the tube is heated at a heating rate of 5 °C / min. Heat the temperature of the tube furnace to 1000°C, keep it warm for 2 hours, stop feeding the mixed...

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Abstract

The invention discloses a preparation method of a silicon-rich SiOx-C material. SiO is used as a raw material, and SiOx obtains a porous silicon-based material with the composition of SiO2@ SiO@Si through etching SiO disproportionation reaction; next, Si is deposited in the porous structure of the porous silicon-based material through CVD (chemical vapor deposition) so as to obtain a silicon-richSiOx material; and a carbon coated layer is further formed through CVD deposition. The gram capacity and the first coulombic efficiency of the silicon-rich SiOx-C material prepared by the method are both higher than those of commercial SiO, the cycle stability is relatively high, and the defect of relatively low first efficiency of the SiO material is overcome.

Description

technical field [0001] The invention belongs to the field of lithium ion batteries, in particular to a silicon-rich SiO x -C materials and their preparation methods and applications. Background technique [0002] In recent years, with the continuous expansion of the application of lithium-ion batteries in high-power equipment such as electric tools, electric / hybrid vehicles, and energy storage power stations, traditional graphite anodes (specific capacity 372mAh / g) have been difficult to meet human needs for high energy density. Therefore, finding a next-generation lithium-ion battery anode material that can replace graphite has become one of the current research hotspots in lithium-ion batteries. The theoretical specific capacity of silicon material is 4200mAh / g, which is rich in resources and will not co-intercalate with the electrolyte. At the same time, the lithium intercalation potential is higher and safer. However, the silicon anode material will experience a volume...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/36H01M4/48H01M4/583H01M4/62H01M10/0525C01B33/021C01B33/029C01B33/03C01B33/113C01B32/15B82Y30/00
CPCB82Y30/00C01B33/021C01B33/029C01B33/03C01B33/113C01P2002/85C01P2004/03C01P2004/04C01P2004/80C01B32/15H01M4/366H01M4/48H01M4/583H01M4/625H01M10/0525Y02E60/10
Inventor 王庆莉王辉李道聪夏昕杨茂萍
Owner HEFEI GUOXUAN HIGH TECH POWER ENERGY
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