A kind of preparation method of TSC ceramic thin film and its product and application

Abstract

The invention relates to a preparation method of a TSC ceramic thin film and its product and application, belonging to the technical field of photoelectric materials. The present invention proposes to adopt the traditional physical vapor deposition (PVD) coating method, utilize Ti 3 SiC 2 The powder material is used as the target material to prepare a semiconductor thin film with a micronano thickness. The manufacturing process is simple, reliable and low in cost. 3 SiC 2 In addition to good mechanical and friction and wear properties, the material has dual properties of near-infrared light penetration and moderate electrical conductivity. Utilize the Ti that the inventive method makes 3 SiC 2 The transmittance of the ceramic thin film in the 800-2200nm spectral range is not less than 80%, and the conductivity is 50Ω / □-2000Ω / □. Based on the above properties, the present invention uses Ti 3 SiC 2 The scope of application of the material is extended to the field of optoelectronic technology, and it provides a theoretical basis for its use as a window material for the packaging of infrared band optoelectronic devices. The ceramic film of the invention has good engineering application prospects in the field of optoelectronics.

Description

technical field [0001] The invention belongs to the technical field of photoelectric materials, and in particular relates to a preparation method of a TSC ceramic thin film and its product and application. Background technique [0002] In the 1960s, Nowotny and others first proposed the concept of ternary layered carbide / nitride ceramics. Since then, researchers have discovered some compounds with similar structures, but these compounds did not attract enough attention at that time. In 2000, Barsoum published a paper on ―M n+1 AX n phase" (referred to as MAX phase) materials, and the review also introduces a series of advantages of this type of ceramic materials, which have both ceramic and metal properties. Like ceramics, they have a high melting point, High temperature strength and yield strength, good oxidation resistance, corrosion resistance and thermal shock resistance; like metals, they have high thermal and electrical conductivity, high shear modulus and elastic mo...

AI Technical Summary

Problems solved by technology

[0002] In the 1960s, Nowotny and others first proposed the concept of ternary layered carbide / nitride ceramics. Since then, researchers have discovered some compounds with similar structures, but these compounds did not attract enough attention at that time.

The transmittance of ITO film to visible light can reach more than 95%, and the absorbance rate to ultraviolet rays can reach more than 85%, but the transmittance to infrared rays is very low, the highest is only about 20%.

Moreover, the ITO material itself has certain defects. For example, indium (In) is classified as a rare earth metal and is a precious metal; ITO has strong water absorption, and it is easy to absorb moisture and carbon dioxide in the air and cause chemical reactions to deteriorate, commonly known as "Moldy", so special attention should be paid to moisture-proof during storage, and a waterproof layer is usually required in actual use; the ITO layer is prone to ion replacement reactions in active positive ion solutions, forming other reactions with poor conductivity and transmittance Substances, cannot be placed in the active positive ion solution for a long time during processing

[0005] Ti 3 SiC 2 The research direction of ceramics is limited to the preparation method and its tribology research, and there is no research on it in the field of optoelectronics

Images