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Near-infrared luminescent material and light-emitting device prepared from same

A technology of light-emitting materials and light-emitting devices, applied in the directions of light-emitting materials, semiconductor devices, chemical instruments and methods, etc., can solve the problems of low light-emitting efficiency, poor stability and high preparation cost, and achieve high light-emitting efficiency, low cost and simple preparation process. Effect

Pending Publication Date: 2018-12-14
GRIREM ADVANCED MATERIALS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The second technical problem to be solved by the present invention is to provide a light-emitting device prepared by using the near-infrared light-emitting material to solve the problem of poor stability and low luminous efficiency of near-infrared chips, halogen lamps and other near-infrared light-emitting materials in the prior art. , high production cost and other issues

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  • Near-infrared luminescent material and light-emitting device prepared from same
  • Near-infrared luminescent material and light-emitting device prepared from same
  • Near-infrared luminescent material and light-emitting device prepared from same

Examples

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preparation example Construction

[0053] The preparation method of the luminescent material of the present invention can be prepared by methods known in the art, such as high-temperature solid-phase method, the present invention is preferably an oxide, fluoride, carbonate or chloride of R element, Q element Oxides, fluorides, carbonates or chlorides of Cr, oxides, fluorides or carbonates of Cr, oxides, fluorides or carbonates of Yb, and the raw materials are accurately weighed according to a certain stoichiometric ratio , at a temperature of 1400-1500° C., calcined in an atmosphere of air, nitrogen and / or hydrogen for 2-20 hours to obtain a calcined product, and the calcined product is post-treated to obtain the desired phosphor. Among them, post-processing includes crushing, washing (water washing or weak acid washing, etc.), classification, etc.

[0054] The manufactured device includes a phosphor and an excitation light source, and the phosphor includes the above-mentioned near-infrared luminescent material...

Embodiment 1

[0057] The near-infrared luminescent material described in this embodiment contains an inorganic compound whose composition formula is Y 2.92 Ga 4.4 o 11.25 :Cr 0.10 ,Yb 0.08 .

[0058] The near-infrared luminescent material described in this embodiment is represented by Y 2 o 3 , Ga 2 o 3 、Cr 2 o 3 , Yb 2 o 3 As raw material, according to its composition is Y 2.92 Ga 4.4 o 11.25 :Cr 0.10 ,Yb 0.08 The stoichiometric ratio of the raw materials is accurately weighed, roasted at 1400° C. in air for 5 hours to obtain a roasted product, and the roasted product is crushed, washed with water, and dried to obtain the required luminescent material.

[0059] The excitation spectrum of the obtained luminescent material was measured as figure 1 , whose monitoring wavelength is 1025nm. From figure 1 It can be seen that the luminescent material prepared in this example can be effectively excited in the range of 250-300nm, 400-500nm, and 550-700nm. Light has strong broadb...

Embodiment 2

[0066] The near-infrared luminescent material described in this embodiment, the compound composition formula it comprises is Y 3.38 Ga 4.9 o 12.66 :Cr 0.10 ,Yb 0.06 .

[0067] According to chemical formula Y 3.38 Ga 4.9 o 12.66 :Cr 0.10 ,Yb 0.06 stoichiometric ratio, accurately weigh Y 2 o 3 , Ga 2 o 3 、Cr 2 o 3 and Yb 2 o 3 Mix to obtain a mixture; after the mixture is ground and mixed, it is calcined at 1500°C for 5 hours, and the roasted product is obtained after cooling down; the obtained roasted product is subjected to post-processing such as crushing, grinding, grading, and sieving to obtain a near-infrared Phosphor samples.

[0068] The obtained near-infrared phosphor sample is subjected to an excitation test, the excitation wavelength is 460nm, and its infrared emission spectrum is as follows: image 3 shown. The results show that the near-infrared phosphor sample can emit short-wave near-infrared light of 900-1100nm under the excitation of 460nm. D...

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Abstract

The invention especially relates to a near-infrared luminescent material which can emit wideband near-infrared light under the effective excitation of ultraviolet-visible light and further discloses alight-emitting device prepared from the material, belonging to the technical field of luminescent materials. The near-infrared luminescent material can efficiently emit near-infrared light with a peak wavelength of 900 to 1100 nm under the condition of an effective excitation wavelength of 250 to 750 nm. The luminescent material has the characteristics of a wide excitation emission wavelength range, high luminescence efficiency, uniformity, no impurity phase, stability, simple preparation, etc. The invention also provides the light-emitting device prepared from the near-infrared luminescent material of the invention. The luminescent material and the light-emitting device of the invention solve the problems of poor stability, low luminescence efficiency, high preparation cost and the likeof conventional near-infrared luminescent materials and light-emitting devices, and have good application prospects.

Description

technical field [0001] The invention belongs to the technical field of luminescent materials, and particularly relates to a near-infrared luminescent material, which can be effectively excited by ultraviolet and visible light to emit broadband near-infrared light, and further discloses a luminescent device prepared from the material. Background technique [0002] In recent years, with the deepening of research in the near-infrared field (700-2500nm) and the expansion of its application range, especially with the development of optical fiber communication, plant lighting, facial recognition, iris recognition, security monitoring, laser radar, digital medical treatment, 3D transmission Sensation, the development of solar cell efficiency, anti-counterfeiting and other fields, there is an urgent need to develop more efficient and stable near-infrared light-emitting technology. [0003] The existing near-infrared short-wave light acquisition methods mainly include infrared chips ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/80H01L33/50
CPCH01L33/502C09K11/7769C09K11/7774C09K11/7776C09K11/06H01L33/504C09K11/7766
Inventor 刘荣辉陈晓霞刘元红李彦峰马小乐
Owner GRIREM ADVANCED MATERIALS CO LTD
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